GB1414202A - Method of manufacturing monocrystalline semiconductor bodies - Google Patents

Method of manufacturing monocrystalline semiconductor bodies

Info

Publication number
GB1414202A
GB1414202A GB199973A GB199973A GB1414202A GB 1414202 A GB1414202 A GB 1414202A GB 199973 A GB199973 A GB 199973A GB 199973 A GB199973 A GB 199973A GB 1414202 A GB1414202 A GB 1414202A
Authority
GB
United Kingdom
Prior art keywords
crystal
dislocations
crucible
melt
growing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB199973A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1414202A publication Critical patent/GB1414202A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Light Receiving Elements (AREA)

Abstract

1414202 Growing crystals with dislocations PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 15 Jan 1973 [18 Jan 1972] 1999/73 Heading B1S [Also in Division H1] A monocrystalline semiconductor body containing dislocations is made by growing a single crystal of a semiconductor material by deposition from a liquid phase so as to produce a dislocation-free region of crystallized material and then introducing dislocations into the dislocation-free region of crystallized material during the growth of further dislocation free material. The dislocations may be produced by mechanical vibrations or stresses, or thermally. The monocrystalline body may be formed by zone-melting or crystal pulling. The formation of dislocations in the non-dislocated growing crystal formed by crystal pulling may be effected and controlled by creating structural stresses in the shape of the growing crystal e.g. if during growth of the single crystal the conditions of growth during the increase in diameter produce a conical form and if the apical angle of this conical form exceeds a certain value spontaneous generation of dislocations occurs. The Figure shown is a vertical section of a device for drawing crystals using the above method for producing dislocations. The device consists of a cylindrical chamber with quartz glass walls 1, a bottom 2 and a lid 3. The chamber contains an outer crucible 9, supported by 8, and is inductively heated by coil 12 connected to generator 22. Crucible 9, contains an inner crucible 10 with a stem 13 passing through aperture 14 in the outer crucible. The stem 13 is connected to a weight 15. The inner crucible can be raised or lowered and also can rotate about stem 13 in the outer crucible. Material to be crystallized which is contained in outer crucible 9 passes into the inner crucible 10 via duct 16 connecting the crucibles. The crystal drawing rod 4 includes a seed crystal holder 11. In an example of the method using this apparatus, pure germanium is melted in crucible 9 and flows via duct 16 into inner crucible 10 which contains indium as a dopant and the crucible is pulled down into the melt 38, by weight 15 until the upper surface of 10 just projects above the melt. The drawing rod 4, containing a [111]-germanium seed crystal at 30, is lowered until it contacts melt surface 31. The initial diameter of the grown crystal 32 is 2 mms and when 10 mms in length of this crystal has been grown, the diameter of the crystal is increased by temperature and drawing rate control and a conical part 34 having an apical angle of 40‹ formed. Just before the conical part 34 reaches a diameter of 45 mms the temperature of the melt 31 is increased whereby the conical part 34 changes at 35 into a cylindrical portion 36 and dislocations are generated in the already crystallized material. The average dislocation density is from 200 to 2,500 dislocations per sq cm. The germanium crystal is used in the manufacture of lithium-drifted radiation detectors suitable for measurement of γ-radiation and X-rays.
GB199973A 1972-01-18 1973-01-15 Method of manufacturing monocrystalline semiconductor bodies Expired GB1414202A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7200677A NL7200677A (en) 1972-01-18 1972-01-18

Publications (1)

Publication Number Publication Date
GB1414202A true GB1414202A (en) 1975-11-19

Family

ID=19815182

Family Applications (1)

Application Number Title Priority Date Filing Date
GB199973A Expired GB1414202A (en) 1972-01-18 1973-01-15 Method of manufacturing monocrystalline semiconductor bodies

Country Status (7)

Country Link
JP (1) JPS504975A (en)
BE (1) BE794122A (en)
DE (1) DE2301148A1 (en)
FR (1) FR2168435B1 (en)
GB (1) GB1414202A (en)
IT (1) IT978173B (en)
NL (1) NL7200677A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2325954A3 (en) * 2006-10-20 2011-11-02 Raytheon Company Enhanced beam quality from a laser rod using interstitial dopants
CN109103088A (en) * 2018-08-30 2018-12-28 成都海威华芯科技有限公司 A kind of evaporation coating method of metal ohmic contact germanium and its application
CN114227485A (en) * 2021-12-20 2022-03-25 连云港国伦石英制品有限公司 Forming, processing and cleaning device for large-size silicon wafer oxidation doping quartz device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2344124A1 (en) * 1976-03-12 1977-10-07 Ibm Controlled damage of semiconductor surface - uses tungsten balls and acoustic vibration of wafer to cause damage for experimental testing
JPS61266389A (en) * 1985-05-21 1986-11-26 Sumitomo Electric Ind Ltd Double crucible for making impurity in crystal uniform
JPH01143224A (en) * 1987-11-28 1989-06-05 Toshiba Corp Surface treatment of semiconductor substrate

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2325954A3 (en) * 2006-10-20 2011-11-02 Raytheon Company Enhanced beam quality from a laser rod using interstitial dopants
CN109103088A (en) * 2018-08-30 2018-12-28 成都海威华芯科技有限公司 A kind of evaporation coating method of metal ohmic contact germanium and its application
CN109103088B (en) * 2018-08-30 2020-09-01 成都海威华芯科技有限公司 Evaporation method for ohmic contact metal germanium and application thereof
CN114227485A (en) * 2021-12-20 2022-03-25 连云港国伦石英制品有限公司 Forming, processing and cleaning device for large-size silicon wafer oxidation doping quartz device

Also Published As

Publication number Publication date
FR2168435B1 (en) 1976-08-27
BE794122A (en) 1973-07-16
NL7200677A (en) 1973-07-20
IT978173B (en) 1974-09-20
JPS504975A (en) 1975-01-20
FR2168435A1 (en) 1973-08-31
DE2301148A1 (en) 1973-07-26

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee