BE794122A - WERKWIJZE VOOR HET VERVAARDIGEN VAN EENKRISTALLIJNE HALFGELEIDERLICHAMEN EN HALFGELEIDERINRICHTINGEN, IN HET BIJZONDER STRALINGSDETECTOREN DIE DERGELIJKE EENKRISTALLIJNE HALFENGELEIDERLICHAMEN - Google Patents
WERKWIJZE VOOR HET VERVAARDIGEN VAN EENKRISTALLIJNE HALFGELEIDERLICHAMEN EN HALFGELEIDERINRICHTINGEN, IN HET BIJZONDER STRALINGSDETECTOREN DIE DERGELIJKE EENKRISTALLIJNE HALFENGELEIDERLICHAMENInfo
- Publication number
- BE794122A BE794122A BE794122DA BE794122A BE 794122 A BE794122 A BE 794122A BE 794122D A BE794122D A BE 794122DA BE 794122 A BE794122 A BE 794122A
- Authority
- BE
- Belgium
- Prior art keywords
- eenkristallijne
- het
- stralingsdetectoren
- halfgeleiderlichamen
- halfgeleiderinrichtingen
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
- C30B15/12—Double crucible methods
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7200677A NL7200677A (en) | 1972-01-18 | 1972-01-18 |
Publications (1)
Publication Number | Publication Date |
---|---|
BE794122A true BE794122A (en) | 1973-07-16 |
Family
ID=19815182
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE794122D BE794122A (en) | 1972-01-18 | WERKWIJZE VOOR HET VERVAARDIGEN VAN EENKRISTALLIJNE HALFGELEIDERLICHAMEN EN HALFGELEIDERINRICHTINGEN, IN HET BIJZONDER STRALINGSDETECTOREN DIE DERGELIJKE EENKRISTALLIJNE HALFENGELEIDERLICHAMEN |
Country Status (7)
Country | Link |
---|---|
JP (1) | JPS504975A (en) |
BE (1) | BE794122A (en) |
DE (1) | DE2301148A1 (en) |
FR (1) | FR2168435B1 (en) |
GB (1) | GB1414202A (en) |
IT (1) | IT978173B (en) |
NL (1) | NL7200677A (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2344124A1 (en) * | 1976-03-12 | 1977-10-07 | Ibm | Controlled damage of semiconductor surface - uses tungsten balls and acoustic vibration of wafer to cause damage for experimental testing |
JPS61266389A (en) * | 1985-05-21 | 1986-11-26 | Sumitomo Electric Ind Ltd | Double crucible for making impurity in crystal uniform |
JPH01143224A (en) * | 1987-11-28 | 1989-06-05 | Toshiba Corp | Surface treatment of semiconductor substrate |
US7535947B2 (en) * | 2006-10-20 | 2009-05-19 | Raytheon Company | Enhanced beam quality from a laser rod using interstitial dopants |
CN109103088B (en) * | 2018-08-30 | 2020-09-01 | 成都海威华芯科技有限公司 | Evaporation method for ohmic contact metal germanium and application thereof |
CN114227485B (en) * | 2021-12-20 | 2022-09-02 | 连云港国伦石英制品有限公司 | Forming, processing and cleaning device for large-size silicon wafer oxidation doping quartz device |
-
0
- BE BE794122D patent/BE794122A/en unknown
-
1972
- 1972-01-18 NL NL7200677A patent/NL7200677A/xx unknown
-
1973
- 1973-01-11 DE DE19732301148 patent/DE2301148A1/en active Pending
- 1973-01-15 GB GB199973A patent/GB1414202A/en not_active Expired
- 1973-01-15 IT IT1923173A patent/IT978173B/en active
- 1973-01-17 JP JP48007129A patent/JPS504975A/ja active Pending
- 1973-01-17 FR FR7301578A patent/FR2168435B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB1414202A (en) | 1975-11-19 |
FR2168435A1 (en) | 1973-08-31 |
FR2168435B1 (en) | 1976-08-27 |
JPS504975A (en) | 1975-01-20 |
DE2301148A1 (en) | 1973-07-26 |
IT978173B (en) | 1974-09-20 |
NL7200677A (en) | 1973-07-20 |
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