GB931652A - Process for the electrolytic purification of semiconductor materials - Google Patents

Process for the electrolytic purification of semiconductor materials

Info

Publication number
GB931652A
GB931652A GB3333959A GB3333959A GB931652A GB 931652 A GB931652 A GB 931652A GB 3333959 A GB3333959 A GB 3333959A GB 3333959 A GB3333959 A GB 3333959A GB 931652 A GB931652 A GB 931652A
Authority
GB
United Kingdom
Prior art keywords
current
semiconductor materials
magnetic field
electrolytic purification
treated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3333959A
Inventor
George Roman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pye Electronic Products Ltd
Original Assignee
Pye Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pye Ltd filed Critical Pye Ltd
Priority to GB3333959A priority Critical patent/GB931652A/en
Publication of GB931652A publication Critical patent/GB931652A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/04—Homogenisation by zone-levelling
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)

Abstract

<PICT:0931652/III/1> In the zone melting of germanium or silicon by means of an induction coil, a crucible 1 of quartz contains the material 2 to be treated, D.C. current is supplied via carbon electrodes 3, and a magnetic field is applied at right angles to the current flow. The material treated may have a cross-section of 2 cm. sq. A current of 1000 amps/sq. cm. and a potential of 5 volts may be employed. The field may be produced by a permanent or electromagnet, which may be cooled. The poles may be spaced apart 10 cm. The magnetic field strength may be 5000 lines per sq. cm. Specification 850,313 is referred to.
GB3333959A 1959-10-01 1959-10-01 Process for the electrolytic purification of semiconductor materials Expired GB931652A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB3333959A GB931652A (en) 1959-10-01 1959-10-01 Process for the electrolytic purification of semiconductor materials

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3333959A GB931652A (en) 1959-10-01 1959-10-01 Process for the electrolytic purification of semiconductor materials

Publications (1)

Publication Number Publication Date
GB931652A true GB931652A (en) 1963-07-17

Family

ID=10351680

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3333959A Expired GB931652A (en) 1959-10-01 1959-10-01 Process for the electrolytic purification of semiconductor materials

Country Status (1)

Country Link
GB (1) GB931652A (en)

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