GB796878A - Improvements in or relating to methods of stirring molten electrically conductive material - Google Patents

Improvements in or relating to methods of stirring molten electrically conductive material

Info

Publication number
GB796878A
GB796878A GB14398/56A GB1439856A GB796878A GB 796878 A GB796878 A GB 796878A GB 14398/56 A GB14398/56 A GB 14398/56A GB 1439856 A GB1439856 A GB 1439856A GB 796878 A GB796878 A GB 796878A
Authority
GB
United Kingdom
Prior art keywords
melt
current
magnetic field
relating
methods
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB14398/56A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefunken AG
Original Assignee
Telefunken AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefunken AG filed Critical Telefunken AG
Publication of GB796878A publication Critical patent/GB796878A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/34—Arrangements for circulation of melts
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2213/00—Aspects relating both to resistive heating and to induction heating, covered by H05B3/00 and H05B6/00
    • H05B2213/02—Stirring of melted material in melting furnaces

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

A semi-conductor crystal is grown on a seed-crystal 8, Fig. 2, pulled from a melt 2 in which a stirring effect is produced by establishing a magnetic field in the melt and passing a flow of electric current through the melt so that the lines of current flow 5 cut the lines of the magnetic field 7. The magnetic field is produced by a coil 6 which also heats the melt. The melt is contained by a carbon crucible 1 encircled by a metal ring 3, and current is passed through the melt between the seed crystal 8 and the ring 3. Direct or alternating current may be used; when alternating current is used the same frequency is employed for energizing the coil 6 and for producing the <PICT:0796878/III/1> current flow in the melt, with a phase difference of 90 degrees between the two. The semi-conductor material may be silicon or germanium.
GB14398/56A 1955-06-27 1956-05-09 Improvements in or relating to methods of stirring molten electrically conductive material Expired GB796878A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE796878X 1955-06-27

Publications (1)

Publication Number Publication Date
GB796878A true GB796878A (en) 1958-06-18

Family

ID=6711041

Family Applications (1)

Application Number Title Priority Date Filing Date
GB14398/56A Expired GB796878A (en) 1955-06-27 1956-05-09 Improvements in or relating to methods of stirring molten electrically conductive material

Country Status (1)

Country Link
GB (1) GB796878A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2135594A (en) * 1980-01-07 1984-09-05 Emanuel Michael Sachs Ribbon growth of crystals

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2135594A (en) * 1980-01-07 1984-09-05 Emanuel Michael Sachs Ribbon growth of crystals

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