GB932661A - Improvements in or relating to methods of zone levelling rod-shaped bodies - Google Patents

Improvements in or relating to methods of zone levelling rod-shaped bodies

Info

Publication number
GB932661A
GB932661A GB5056/60A GB505660A GB932661A GB 932661 A GB932661 A GB 932661A GB 5056/60 A GB5056/60 A GB 5056/60A GB 505660 A GB505660 A GB 505660A GB 932661 A GB932661 A GB 932661A
Authority
GB
United Kingdom
Prior art keywords
rod
zone
relating
methods
significant impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5056/60A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electrical Industries Ltd
Original Assignee
Philips Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electrical Industries Ltd filed Critical Philips Electrical Industries Ltd
Publication of GB932661A publication Critical patent/GB932661A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/925—Fluid growth doping control, e.g. delta doping

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

Abstract

In the uniform distribution of a significant impurity throughout a rod of semi-conductor material by zone melting, a molten zone is passed through the rod while containing the significant impurity within a bore of substantial <PICT:0932661/III/1> length within the rod so as to close the opening by melting before the molten zone reaches the significant impurity. Germanium is specified as semiconductor material. As shown, a molten zone 13 formed by an induction heating coil 12 is passed downwards through a rod 11 containing a significant impurity 15 in a bore 14. According to Fig. 1 (not shown) the opening is contained in a lateral or end face of the rod and the rod is zone melted in a crucible.
GB5056/60A 1959-02-17 1960-02-12 Improvements in or relating to methods of zone levelling rod-shaped bodies Expired GB932661A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL236245 1959-02-17

Publications (1)

Publication Number Publication Date
GB932661A true GB932661A (en) 1963-07-31

Family

ID=19751581

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5056/60A Expired GB932661A (en) 1959-02-17 1960-02-12 Improvements in or relating to methods of zone levelling rod-shaped bodies

Country Status (8)

Country Link
US (1) US3085031A (en)
BE (1) BE587638A (en)
CH (1) CH389780A (en)
DE (1) DE1107199B (en)
DK (1) DK94963C (en)
FR (1) FR1248809A (en)
GB (1) GB932661A (en)
NL (2) NL236245A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1235875B (en) * 1963-11-13 1967-03-09 Siemens Ag Process for the production of neodymium-doped calcium fluoride single crystals for lasers

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL168491B (en) * 1951-11-16 Roussel-Uclaf, Societe Anonyme Te Parijs.
AT194444B (en) * 1953-02-26 1958-01-10 Siemens Ag Method and device for treating an elongated semiconductor crystal arrangement
US2789039A (en) * 1953-08-25 1957-04-16 Rca Corp Method and apparatus for zone melting
GB797950A (en) * 1954-06-10 1958-07-09 Rca Corp Semi-conductor alloys
US2813048A (en) * 1954-06-24 1957-11-12 Bell Telephone Labor Inc Temperature gradient zone-melting
US2902350A (en) * 1954-12-21 1959-09-01 Rca Corp Method for single crystal growth
US2841559A (en) * 1955-04-27 1958-07-01 Rca Corp Method of doping semi-conductive materials

Also Published As

Publication number Publication date
NL236245A (en)
BE587638A (en) 1960-08-16
US3085031A (en) 1963-04-09
DE1107199B (en) 1961-05-25
NL98968C (en)
CH389780A (en) 1965-03-31
FR1248809A (en) 1960-12-23
DK94963C (en) 1962-12-10

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