GB831303A - Improvements in or relating to refining processes for semi-conductor and other materials - Google Patents
Improvements in or relating to refining processes for semi-conductor and other materialsInfo
- Publication number
- GB831303A GB831303A GB31896/55A GB3189655A GB831303A GB 831303 A GB831303 A GB 831303A GB 31896/55 A GB31896/55 A GB 31896/55A GB 3189655 A GB3189655 A GB 3189655A GB 831303 A GB831303 A GB 831303A
- Authority
- GB
- United Kingdom
- Prior art keywords
- rod
- zone
- conductor
- relating
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 238000007670 refining Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 230000008018 melting Effects 0.000 abstract 2
- 238000002844 melting Methods 0.000 abstract 2
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/06—Single-crystal growth by zone-melting; Refining by zone-melting the molten zone not extending over the whole cross-section
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Weting (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Abstract
A molten zone is caused to move along a rod e.g. of silicon or germanium, without the molten zone dividing the rod into separate solid portions, the zone traversing the rod in such manner that all portions of the rod are subjected to melting. A monocrystal may result. Preferably the zone moves in a helical path around the rod which may be heated by the passage of an electric current to just below its melting point additional heat being supplied by H.F. current. Reference has been directed by the Comptroller to Specifications 769,673 and 775,986.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES29621A DE1031893B (en) | 1952-08-01 | 1952-08-01 | Process for the outer shaping of semiconductor arrangements, in particular for rectifier and amplifier purposes with semiconductors made of germanium or silicon |
GB3142656A GB831304A (en) | 1952-08-01 | 1956-10-16 | Improvements in or relating to refining processes for semiconductor and other materials |
Publications (1)
Publication Number | Publication Date |
---|---|
GB831303A true GB831303A (en) | 1960-03-30 |
Family
ID=32394886
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB19225/53A Expired GB721026A (en) | 1952-08-01 | 1953-07-10 | Process for external profiling of semiconductor devices |
GB31896/55A Expired GB831303A (en) | 1952-08-01 | 1955-11-08 | Improvements in or relating to refining processes for semi-conductor and other materials |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB19225/53A Expired GB721026A (en) | 1952-08-01 | 1953-07-10 | Process for external profiling of semiconductor devices |
Country Status (6)
Country | Link |
---|---|
US (1) | US2914397A (en) |
BE (3) | BE561652A (en) |
CH (2) | CH320916A (en) |
FR (3) | FR1081736A (en) |
GB (2) | GB721026A (en) |
NL (2) | NL96829C (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE977180C (en) * | 1955-03-05 | 1965-06-24 | Siemens Ag | Process for electrolytic localized removal such as drilling and cutting up semiconducting crystalline material |
GB918028A (en) * | 1958-09-04 | 1963-02-13 | Philips Electrical Ind Ltd | Improvements in or relating to methods of providing alloyed regions on semi-conductive bodies |
DE1104617B (en) * | 1959-06-18 | 1961-04-13 | Siemens Ag | Process for the electrolytic etching of a semiconductor arrangement with a semiconductor body made of essentially single-crystal semiconductor material |
US3233977A (en) * | 1961-05-31 | 1966-02-08 | Westinghouse Electric Corp | Furnace with means for adjusting a crucible in growing crystals |
DE1243641B (en) * | 1962-12-12 | 1967-07-06 | Siemens Ag | Process for the production of semiconductor rods by drawing from the melt |
US4039283A (en) * | 1973-04-18 | 1977-08-02 | Siemens Aktiengesellschaft | Apparatus for producing a controlled radial path of resistance in a semiconductor monocrystalline rod |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2125173A (en) * | 1932-07-29 | 1938-07-26 | Union Carbide & Carbon Corp | Apparatus for treating the defective surface metal of billets or the like |
US2477411A (en) * | 1944-06-10 | 1949-07-26 | Linde Air Prod Co | Metal surface conditioning apparatus and process |
BE510303A (en) * | 1951-11-16 | |||
DE1061527B (en) * | 1953-02-14 | 1959-07-16 | Siemens Ag | Process for zone-wise remelting of rods and other elongated workpieces |
-
0
- NL NLAANVRAGE7313750,A patent/NL180311B/en unknown
- BE BE552391D patent/BE552391A/xx unknown
- BE BE521845D patent/BE521845A/xx unknown
- NL NL96829D patent/NL96829C/xx active
- BE BE561652D patent/BE561652A/xx unknown
-
1953
- 1953-07-10 GB GB19225/53A patent/GB721026A/en not_active Expired
- 1953-07-27 CH CH320916D patent/CH320916A/en unknown
- 1953-07-30 FR FR1081736D patent/FR1081736A/en not_active Expired
-
1955
- 1955-11-08 GB GB31896/55A patent/GB831303A/en not_active Expired
-
1956
- 1956-10-27 CH CH360207D patent/CH360207A/en unknown
- 1956-11-07 FR FR71626D patent/FR71626E/en not_active Expired
-
1957
- 1957-10-07 US US688610A patent/US2914397A/en not_active Expired - Lifetime
- 1957-10-15 FR FR72391D patent/FR72391E/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR72391E (en) | 1960-03-31 |
BE521845A (en) | |
NL96829C (en) | |
US2914397A (en) | 1959-11-24 |
NL180311B (en) | |
FR1081736A (en) | 1954-12-22 |
FR71626E (en) | 1960-01-13 |
BE552391A (en) | |
GB721026A (en) | 1954-12-29 |
BE561652A (en) | |
CH320916A (en) | 1957-04-15 |
CH360207A (en) | 1962-02-15 |
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