FR71626E - Semiconductor device manufacturing - Google Patents

Semiconductor device manufacturing

Info

Publication number
FR71626E
FR71626E FR71626DA FR71626E FR 71626 E FR71626 E FR 71626E FR 71626D A FR71626D A FR 71626DA FR 71626 E FR71626 E FR 71626E
Authority
FR
France
Prior art keywords
semiconductor device
device manufacturing
manufacturing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
French (fr)
Inventor
Henley Frank Sterling
George King
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Standard Electric Corp
Original Assignee
International Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DES29621A external-priority patent/DE1031893B/en
Application filed by International Standard Electric Corp filed Critical International Standard Electric Corp
Application granted granted Critical
Publication of FR71626E publication Critical patent/FR71626E/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/06—Single-crystal growth by zone-melting; Refining by zone-melting the molten zone not extending over the whole cross-section
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
FR71626D 1952-08-01 1956-11-07 Semiconductor device manufacturing Expired FR71626E (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES29621A DE1031893B (en) 1952-08-01 1952-08-01 Process for the outer shaping of semiconductor arrangements, in particular for rectifier and amplifier purposes with semiconductors made of germanium or silicon
GB3142656A GB831304A (en) 1952-08-01 1956-10-16 Improvements in or relating to refining processes for semiconductor and other materials

Publications (1)

Publication Number Publication Date
FR71626E true FR71626E (en) 1960-01-13

Family

ID=32394886

Family Applications (3)

Application Number Title Priority Date Filing Date
FR1081736D Expired FR1081736A (en) 1952-08-01 1953-07-30 Semiconductor device manufacturing
FR71626D Expired FR71626E (en) 1952-08-01 1956-11-07 Semiconductor device manufacturing
FR72391D Expired FR72391E (en) 1952-08-01 1957-10-15 Semiconductor device manufacturing

Family Applications Before (1)

Application Number Title Priority Date Filing Date
FR1081736D Expired FR1081736A (en) 1952-08-01 1953-07-30 Semiconductor device manufacturing

Family Applications After (1)

Application Number Title Priority Date Filing Date
FR72391D Expired FR72391E (en) 1952-08-01 1957-10-15 Semiconductor device manufacturing

Country Status (6)

Country Link
US (1) US2914397A (en)
BE (3) BE521845A (en)
CH (2) CH320916A (en)
FR (3) FR1081736A (en)
GB (2) GB721026A (en)
NL (2) NL96829C (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE977180C (en) * 1955-03-05 1965-06-24 Siemens Ag Process for electrolytic localized removal such as drilling and cutting up semiconducting crystalline material
DE1143273B (en) * 1958-09-04 1963-02-07 Philips Nv A method of manufacturing a semiconductor device, e.g. B. a transistor or a crystal diode
DE1104617B (en) * 1959-06-18 1961-04-13 Siemens Ag Process for the electrolytic etching of a semiconductor arrangement with a semiconductor body made of essentially single-crystal semiconductor material
US3233977A (en) * 1961-05-31 1966-02-08 Westinghouse Electric Corp Furnace with means for adjusting a crucible in growing crystals
DE1243641B (en) * 1962-12-12 1967-07-06 Siemens Ag Process for the production of semiconductor rods by drawing from the melt
US4039283A (en) * 1973-04-18 1977-08-02 Siemens Aktiengesellschaft Apparatus for producing a controlled radial path of resistance in a semiconductor monocrystalline rod

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2125173A (en) * 1932-07-29 1938-07-26 Union Carbide & Carbon Corp Apparatus for treating the defective surface metal of billets or the like
US2477411A (en) * 1944-06-10 1949-07-26 Linde Air Prod Co Metal surface conditioning apparatus and process
BE510303A (en) * 1951-11-16
DE1061527B (en) * 1953-02-14 1959-07-16 Siemens Ag Process for zone-wise remelting of rods and other elongated workpieces

Also Published As

Publication number Publication date
NL180311B (en)
GB721026A (en) 1954-12-29
BE561652A (en)
BE552391A (en)
FR72391E (en) 1960-03-31
NL96829C (en)
FR1081736A (en) 1954-12-22
BE521845A (en)
CH360207A (en) 1962-02-15
US2914397A (en) 1959-11-24
CH320916A (en) 1957-04-15
GB831303A (en) 1960-03-30

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