GB831304A - Improvements in or relating to refining processes for semiconductor and other materials - Google Patents

Improvements in or relating to refining processes for semiconductor and other materials

Info

Publication number
GB831304A
GB831304A GB3142656A GB3142656A GB831304A GB 831304 A GB831304 A GB 831304A GB 3142656 A GB3142656 A GB 3142656A GB 3142656 A GB3142656 A GB 3142656A GB 831304 A GB831304 A GB 831304A
Authority
GB
United Kingdom
Prior art keywords
rod
melting
coil
pict
arranging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3142656A
Inventor
Henley Frank Sterling
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to BE552391D priority Critical patent/BE552391A/xx
Priority to NLAANVRAGE7313750,A priority patent/NL180311B/en
Priority to BE521845D priority patent/BE521845A/xx
Priority to BE561652D priority patent/BE561652A/xx
Priority to NL96829D priority patent/NL96829C/xx
Priority to GB19225/53A priority patent/GB721026A/en
Priority to CH320916D priority patent/CH320916A/en
Priority to FR1081736D priority patent/FR1081736A/en
Priority to GB31896/55A priority patent/GB831303A/en
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to CH360207D priority patent/CH360207A/en
Priority to FR71626D priority patent/FR71626E/en
Priority to US688610A priority patent/US2914397A/en
Priority to FR72391D priority patent/FR72391E/en
Publication of GB831304A publication Critical patent/GB831304A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/06—Single-crystal growth by zone-melting; Refining by zone-melting the molten zone not extending over the whole cross-section
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Glass Melting And Manufacturing (AREA)
  • Weting (AREA)

Abstract

<PICT:0831304/III/1> <PICT:0831304/III/2> Impure solid materials are zone-refined by arranging a rod of the solid vertically, melting an annular zone surrounding an inner unmelted portion and moving the molten zone along the rod so that it is all subjected to melting except an inner core, parallel to the axis of the rod. As shown, a rod 8 of impure material, silicon for example, is carried by shaft 6 which passes through a bush 5 in base plate 2 of the glass or quartz envelope 1 provided with an inlet 3 and outlet 4 for an inert gas such as argon. An induction coil 9, in the form of a metal plate slotted at 11, surrounds the envelope, the coil being placed eccentrically with respect to the axis of the rod 8 so that the crosssection of the left-hand side 16 of the melted annular portion is larger than the right-hand side 17. The shaft 6 is moved vertically without rotation and all the material of the rod is melted except a central core. The rod is then rotated through 180 degrees and the melting process repeated, whereby all portions of the rod are eventually subjected to melting. In a modification, the surface of silicon ingots, produced by the thermal decomposition of silane, is smoothed by arranging the coil 9 coaxially with respect to the rod 8 and performing the melting as described. Reference has been directed by the Comptroller to Specification 769,673.
GB3142656A 1952-08-01 1956-10-16 Improvements in or relating to refining processes for semiconductor and other materials Expired GB831304A (en)

Priority Applications (13)

Application Number Priority Date Filing Date Title
BE552391D BE552391A (en) 1952-08-01
NLAANVRAGE7313750,A NL180311B (en) 1952-08-01 PROCESS FOR PREPARING N-HALOGENACYLANILINOALKAN CARBON ACID ESTERS AND PROCESS FOR PREPARATION OF MICROBICIDE PREPARATIONS FOR CONTROL OF PHYTOPATHOGEN FUNGI AND BACTERIA BASED ON SUCH ESTERS.
BE521845D BE521845A (en) 1952-08-01
BE561652D BE561652A (en) 1952-08-01
NL96829D NL96829C (en) 1952-08-01
GB19225/53A GB721026A (en) 1952-08-01 1953-07-10 Process for external profiling of semiconductor devices
CH320916D CH320916A (en) 1952-08-01 1953-07-27 Process for changing the external shape of semiconductor bodies
FR1081736D FR1081736A (en) 1952-08-01 1953-07-30 Semiconductor device manufacturing
GB31896/55A GB831303A (en) 1952-08-01 1955-11-08 Improvements in or relating to refining processes for semi-conductor and other materials
CH360207D CH360207A (en) 1952-08-01 1956-10-27 Method for zonal melting of a rod
FR71626D FR71626E (en) 1952-08-01 1956-11-07 Semiconductor device manufacturing
US688610A US2914397A (en) 1952-08-01 1957-10-07 Refining processes for semiconductor materials
FR72391D FR72391E (en) 1952-08-01 1957-10-15 Semiconductor device manufacturing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES29621A DE1031893B (en) 1952-08-01 1952-08-01 Process for the outer shaping of semiconductor arrangements, in particular for rectifier and amplifier purposes with semiconductors made of germanium or silicon

Publications (1)

Publication Number Publication Date
GB831304A true GB831304A (en) 1960-03-30

Family

ID=7479853

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3142656A Expired GB831304A (en) 1952-08-01 1956-10-16 Improvements in or relating to refining processes for semiconductor and other materials

Country Status (2)

Country Link
DE (1) DE1031893B (en)
GB (1) GB831304A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1195420B (en) * 1963-01-08 1965-06-24 Dow Corning Process for alluvial zone treatment of a rod made of crystalline semiconductor material

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL134389C (en) * 1958-07-02
DE1105069B (en) * 1959-04-25 1961-04-20 Siemens Ag Etching process for a pn junction in the manufacture of a semiconductor device
NL280871A (en) * 1961-08-19

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE467885A (en) * 1943-08-11
US2600500A (en) * 1948-09-24 1952-06-17 Bell Telephone Labor Inc Semiconductor signal translating device with controlled carrier transit times
BE490958A (en) * 1948-09-24
US2560594A (en) * 1948-09-24 1951-07-17 Bell Telephone Labor Inc Semiconductor translator and method of making it
DE823763C (en) * 1949-09-15 1951-12-06 Siemens Ag Process for electrolytic polishing of the surface of semiconductor crystals

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1195420B (en) * 1963-01-08 1965-06-24 Dow Corning Process for alluvial zone treatment of a rod made of crystalline semiconductor material

Also Published As

Publication number Publication date
DE1031893B (en) 1958-06-12

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