CH360207A - Method for zonal melting of a rod - Google Patents
Method for zonal melting of a rodInfo
- Publication number
- CH360207A CH360207A CH360207DA CH360207A CH 360207 A CH360207 A CH 360207A CH 360207D A CH360207D A CH 360207DA CH 360207 A CH360207 A CH 360207A
- Authority
- CH
- Switzerland
- Prior art keywords
- rod
- zonal melting
- zonal
- melting
- Prior art date
Links
- 238000002844 melting Methods 0.000 title 1
- 230000008018 melting Effects 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/06—Single-crystal growth by zone-melting; Refining by zone-melting the molten zone not extending over the whole cross-section
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES29621A DE1031893B (en) | 1952-08-01 | 1952-08-01 | Process for the outer shaping of semiconductor arrangements, in particular for rectifier and amplifier purposes with semiconductors made of germanium or silicon |
| GB3142656A GB831304A (en) | 1952-08-01 | 1956-10-16 | Improvements in or relating to refining processes for semiconductor and other materials |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH360207A true CH360207A (en) | 1962-02-15 |
Family
ID=32394886
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH320916D CH320916A (en) | 1952-08-01 | 1953-07-27 | Process for changing the external shape of semiconductor bodies |
| CH360207D CH360207A (en) | 1952-08-01 | 1956-10-27 | Method for zonal melting of a rod |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH320916D CH320916A (en) | 1952-08-01 | 1953-07-27 | Process for changing the external shape of semiconductor bodies |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US2914397A (en) |
| BE (3) | BE552391A (en) |
| CH (2) | CH320916A (en) |
| FR (3) | FR1081736A (en) |
| GB (2) | GB721026A (en) |
| NL (2) | NL96829C (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE977180C (en) * | 1955-03-05 | 1965-06-24 | Siemens Ag | Process for electrolytic localized removal such as drilling and cutting up semiconducting crystalline material |
| DE1143273B (en) * | 1958-09-04 | 1963-02-07 | Philips Nv | A method of manufacturing a semiconductor device, e.g. B. a transistor or a crystal diode |
| DE1104617B (en) * | 1959-06-18 | 1961-04-13 | Siemens Ag | Process for the electrolytic etching of a semiconductor arrangement with a semiconductor body made of essentially single-crystal semiconductor material |
| US3233977A (en) * | 1961-05-31 | 1966-02-08 | Westinghouse Electric Corp | Furnace with means for adjusting a crucible in growing crystals |
| DE1243641B (en) * | 1962-12-12 | 1967-07-06 | Siemens Ag | Process for the production of semiconductor rods by drawing from the melt |
| US4039283A (en) * | 1973-04-18 | 1977-08-02 | Siemens Aktiengesellschaft | Apparatus for producing a controlled radial path of resistance in a semiconductor monocrystalline rod |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2125173A (en) * | 1932-07-29 | 1938-07-26 | Union Carbide & Carbon Corp | Apparatus for treating the defective surface metal of billets or the like |
| US2477411A (en) * | 1944-06-10 | 1949-07-26 | Linde Air Prod Co | Metal surface conditioning apparatus and process |
| NL168491B (en) * | 1951-11-16 | Roussel-Uclaf, Societe Anonyme Te Parijs. | ||
| DE1061527B (en) * | 1953-02-14 | 1959-07-16 | Siemens Ag | Process for zone-wise remelting of rods and other elongated workpieces |
-
0
- BE BE521845D patent/BE521845A/xx unknown
- NL NLAANVRAGE7313750,A patent/NL180311B/en unknown
- NL NL96829D patent/NL96829C/xx active
- BE BE561652D patent/BE561652A/xx unknown
- BE BE552391D patent/BE552391A/xx unknown
-
1953
- 1953-07-10 GB GB19225/53A patent/GB721026A/en not_active Expired
- 1953-07-27 CH CH320916D patent/CH320916A/en unknown
- 1953-07-30 FR FR1081736D patent/FR1081736A/en not_active Expired
-
1955
- 1955-11-08 GB GB31896/55A patent/GB831303A/en not_active Expired
-
1956
- 1956-10-27 CH CH360207D patent/CH360207A/en unknown
- 1956-11-07 FR FR71626D patent/FR71626E/en not_active Expired
-
1957
- 1957-10-07 US US688610A patent/US2914397A/en not_active Expired - Lifetime
- 1957-10-15 FR FR72391D patent/FR72391E/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR72391E (en) | 1960-03-31 |
| FR1081736A (en) | 1954-12-22 |
| US2914397A (en) | 1959-11-24 |
| FR71626E (en) | 1960-01-13 |
| CH320916A (en) | 1957-04-15 |
| BE561652A (en) | |
| NL180311B (en) | |
| BE552391A (en) | |
| BE521845A (en) | |
| GB831303A (en) | 1960-03-30 |
| GB721026A (en) | 1954-12-29 |
| NL96829C (en) |
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