GB918028A - Improvements in or relating to methods of providing alloyed regions on semi-conductive bodies - Google Patents

Improvements in or relating to methods of providing alloyed regions on semi-conductive bodies

Info

Publication number
GB918028A
GB918028A GB2979059A GB2979059A GB918028A GB 918028 A GB918028 A GB 918028A GB 2979059 A GB2979059 A GB 2979059A GB 2979059 A GB2979059 A GB 2979059A GB 918028 A GB918028 A GB 918028A
Authority
GB
United Kingdom
Prior art keywords
semi
electrode
etching
zone
sept
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2979059A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electrical Industries Ltd
Original Assignee
Philips Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electrical Industries Ltd filed Critical Philips Electrical Industries Ltd
Publication of GB918028A publication Critical patent/GB918028A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Microwave Tubes (AREA)

Abstract

918,028. Semi-conductor devices; etching electrolytically. PHILIPS ELECTRICAL INDUSTRIES Ltd. Sept. 1, 1959 [Sept. 4, 1958], No. 29790/59. Classes 37 and 41. A method of making a semi-conductor device comprises alloying an acceptor material to an edge of a thin P-type zone and to the adjoining parts of a thicker N-type zone and subsequently electrolytically etching the assembly with the recrystallized material connected as anode. In the embodiment (Fig. 1) in which aluminium 4 is alloyed to the middle zone 2 and adjacent parts of the end zones 1, 3, of an NPN silicon body, a wire 5 of tungsten or molybdenum, to serve as an electrode, is introduced into the aluminium while it is molten. After cooling, the body is immersed in a solution of hydrofluoric acid and alcohol and an etching current passed between electrode 5 connected as anode and a platinum cathode in the solution until the configuration shown in Fig. 2 is attained with electrode 5 on a circular pillar 12 of P-type material. As an alternative a linear contact running along the length of the middle zone may be provided.
GB2979059A 1958-09-04 1959-09-01 Improvements in or relating to methods of providing alloyed regions on semi-conductive bodies Expired GB918028A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL231108 1958-09-04

Publications (1)

Publication Number Publication Date
GB918028A true GB918028A (en) 1963-02-13

Family

ID=19751333

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2979059A Expired GB918028A (en) 1958-09-04 1959-09-01 Improvements in or relating to methods of providing alloyed regions on semi-conductive bodies

Country Status (3)

Country Link
DE (1) DE1143273B (en)
FR (1) FR1234099A (en)
GB (1) GB918028A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4306951A (en) * 1980-05-30 1981-12-22 International Business Machines Corporation Electrochemical etching process for semiconductors
US5322814A (en) * 1987-08-05 1994-06-21 Hughes Aircraft Company Multiple-quantum-well semiconductor structures with selective electrical contacts and method of fabrication

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL180311B (en) * 1952-08-01 Ciba Geigy PROCESS FOR PREPARING N-HALOGENACYLANILINOALKAN CARBON ACID ESTERS AND PROCESS FOR PREPARATION OF MICROBICIDE PREPARATIONS FOR CONTROL OF PHYTOPATHOGEN FUNGI AND BACTERIA BASED ON SUCH ESTERS.
DE967259C (en) * 1952-11-18 1957-10-31 Gen Electric Area transistor

Also Published As

Publication number Publication date
DE1143273B (en) 1963-02-07
FR1234099A (en) 1960-10-14

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