GB728940A - Improvements in and relating to methods of making broad area semi-conductor devices - Google Patents

Improvements in and relating to methods of making broad area semi-conductor devices

Info

Publication number
GB728940A
GB728940A GB1741/53A GB174153A GB728940A GB 728940 A GB728940 A GB 728940A GB 1741/53 A GB1741/53 A GB 1741/53A GB 174153 A GB174153 A GB 174153A GB 728940 A GB728940 A GB 728940A
Authority
GB
United Kingdom
Prior art keywords
etching
semi
impurity
germanium
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1741/53A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US268272A external-priority patent/US2783197A/en
Application filed by General Electric Co filed Critical General Electric Co
Publication of GB728940A publication Critical patent/GB728940A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B5/00—Dyes with an anthracene nucleus condensed with one or more heterocyclic rings with or without carbocyclic rings
    • C09B5/24—Dyes with an anthracene nucleus condensed with one or more heterocyclic rings with or without carbocyclic rings the heterocyclic rings being only condensed with an anthraquinone nucleus in 1-2 or 2-3 position
    • C09B5/2409—Dyes with an anthracene nucleus condensed with one or more heterocyclic rings with or without carbocyclic rings the heterocyclic rings being only condensed with an anthraquinone nucleus in 1-2 or 2-3 position not provided for in one of the sub groups C09B5/26 - C09B5/62
    • C09B5/2436—Dyes with an anthracene nucleus condensed with one or more heterocyclic rings with or without carbocyclic rings the heterocyclic rings being only condensed with an anthraquinone nucleus in 1-2 or 2-3 position not provided for in one of the sub groups C09B5/26 - C09B5/62 only nitrogen-containing hetero rings
    • C09B5/2445—Phtaloyl isoindoles
    • C09B5/2454—5,6 phtaloyl dihydro isoindoles
    • C09B5/2463—1,3 oxo or imino derivatives
    • C09B5/2472—1,3 dioxo derivatives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Coloring (AREA)
  • Indole Compounds (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

728,940. Semi-conductor devices; efectrolytic etching. GENERAL ELECTRIC CO. Jan. 21, 1953 [Jan. 25, 1952], No. 1741/53. Classes 37 and 41. A semi-conductor body comprising a P-N junction of the diffused impurity type, is immersed in a solution of sodium hydroxide or potassium hydroxide, and an etching current is passed through the body to a spaced electrode to remove material which short-circuits the P-N junction. The positive terminal is connected to a contact on the body consisting of the significant impurity used for the diffusion. Fig. 2 shows a block 1 of germanium soldered to a base electrode 2 of iron-nickel-cobalt alloy, the solder containing donor material. A piece 4 of indium or other acceptor material is placed on the other surface of the germanium, and diffusion of the impurity is effected as described in Specification 727,900 to provide a P-N junction 5. A nickel-plated conductor 6 is embedded in the indium portion 4. A number of these rectifier units may be subjected to the electrolytic etching process by means of the apparatus shown in Fig. 1. The jar 9 contains sodium hydroxide or potassium hydroxide. The positive terminal is connected to the wires 6 by means of clips 15 and the negative terminal to a stainless steel electrode 10. Between 50 and 150 ampere-seconds of current is passed to etch the device to the form shown in Fig. 3, which has a localized etching at the interface, and avoids the preferential etching of the impurity portion 4 which would occur in an acid etching bath. A cooling coil 12 is provided to maintain the etching bath at the desired temperature. Silicon or other semi-conducting material may be used in place of germanium.
GB1741/53A 1952-01-25 1953-01-21 Improvements in and relating to methods of making broad area semi-conductor devices Expired GB728940A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US268272A US2783197A (en) 1952-01-25 1952-01-25 Method of making broad area semiconductor devices
US747845XA 1953-02-11 1953-02-11

Publications (1)

Publication Number Publication Date
GB728940A true GB728940A (en) 1955-04-27

Family

ID=26756053

Family Applications (2)

Application Number Title Priority Date Filing Date
GB1741/53A Expired GB728940A (en) 1952-01-25 1953-01-21 Improvements in and relating to methods of making broad area semi-conductor devices
GB3047/54A Expired GB747845A (en) 1952-01-25 1954-02-02 N-substituted 1,4-diamino-2,3-anthraquinone dicarboximides

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB3047/54A Expired GB747845A (en) 1952-01-25 1954-02-02 N-substituted 1,4-diamino-2,3-anthraquinone dicarboximides

Country Status (3)

Country Link
CH (1) CH333932A (en)
DE (1) DE945112C (en)
GB (2) GB728940A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1122193B (en) * 1959-09-26 1962-01-18 Basf Ag Process for the preparation of dyes of the anthraquinone series
DE1129249B (en) * 1960-01-15 1962-05-10 Basf Ag Process for the preparation of anthraquinone dyes
DE3109951A1 (en) * 1981-03-14 1982-09-23 Basf Ag, 6700 Ludwigshafen METHOD FOR PRODUCING ANTHRACHINOID DISPERSION DYES
DE3432194A1 (en) * 1984-09-01 1986-03-13 Jürgen Dipl.-Ing. 4300 Essen Mallepree Clamping pin
DE4018229A1 (en) * 1990-06-07 1991-12-12 Basf Ag New 1,4,5,8-tetra:amino anthraquinone dyestuff cpds. - are used in liquid crystal polymer prodn.

Also Published As

Publication number Publication date
GB747845A (en) 1956-04-18
CH333932A (en) 1958-11-15
DE945112C (en) 1956-06-28

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