GB1013064A - Process for drawing a crystalline semiconductor body from a melt - Google Patents

Process for drawing a crystalline semiconductor body from a melt

Info

Publication number
GB1013064A
GB1013064A GB4739463A GB4739463A GB1013064A GB 1013064 A GB1013064 A GB 1013064A GB 4739463 A GB4739463 A GB 4739463A GB 4739463 A GB4739463 A GB 4739463A GB 1013064 A GB1013064 A GB 1013064A
Authority
GB
United Kingdom
Prior art keywords
rod
current
melt
zone
dec
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4739463A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DE1962S0082693 priority Critical patent/DE1244113B/en
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Publication of GB1013064A publication Critical patent/GB1013064A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14Heating of the melt or the crystallised materials
    • C30B15/18Heating of the melt or the crystallised materials using direct resistance heating in addition to other methods of heating, e.g. using Peltier heat
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16Heating of the molten zone
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28Controlling or regulating
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/917Magnetic
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Abstract

1,013,064. Zone-melting. SIEMENS & HALSKE A.G. Dec. 2, 1963 [Dec. 3, 1962], No. 47394/63. Heading BIS. In the production of a monocrystalline rod of germanium or silicon by zone-melting or crystal-pulling, a low lattice dislocation (e.g. 5000/cm.<SP>2</SP>) is produced in the rod by passing a current between the growing rod and the solidifying melt, preferably from the melt to the rod. The current density may be 100 A./cm.<SP>2</SP>. An alternating current may be superimposed on the direct current. The rod may have a diameter of 10À5 mm., the speed of pulling may be 2À5 mm./minute, and the pulled rod may be rotated at 60 r.p.m. As shown, a rod 2 is melted by an induction coil 8 to produce a molten zone 3, and a rod I is solidified from molten zone 3. Passage of a current in direction 7 produces a concave solidifying surface 5 which moves in direction 4.
GB4739463A 1962-12-03 1963-12-02 Process for drawing a crystalline semiconductor body from a melt Expired GB1013064A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE1962S0082693 DE1244113B (en) 1962-12-03 1962-12-03 A method for reducing the Gitterstoerungen in existing crystals of semiconductor material

Publications (1)

Publication Number Publication Date
GB1013064A true GB1013064A (en) 1965-12-15

Family

ID=7510532

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4739463A Expired GB1013064A (en) 1962-12-03 1963-12-02 Process for drawing a crystalline semiconductor body from a melt

Country Status (6)

Country Link
US (1) US3268301A (en)
CH (1) CH406160A (en)
DE (1) DE1244113B (en)
GB (1) GB1013064A (en)
NL (1) NL301226A (en)
SE (1) SE310356B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2234512C3 (en) * 1972-07-13 1979-04-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen
US4012242A (en) * 1973-11-14 1977-03-15 International Rectifier Corporation Liquid epitaxy technique
FR2358021B1 (en) * 1976-07-09 1978-12-22 Radiotechnique Compelec

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2789039A (en) * 1953-08-25 1957-04-16 Rca Corp Method and apparatus for zone melting
US2792317A (en) * 1954-01-28 1957-05-14 Westinghouse Electric Corp Method of producing multiple p-n junctions
NL105554C (en) * 1955-01-13
US2932562A (en) * 1956-12-27 1960-04-12 Bell Telephone Labor Inc Zone-melting with joule heat
US2970895A (en) * 1956-12-31 1961-02-07 Union Carbide Corp Process for crystalline growth employing collimated electrical energy
GB844813A (en) * 1957-05-01 1960-08-17 Sylvania Electric Prod Zone melting apparatus
US2937216A (en) * 1957-12-30 1960-05-17 Minnesota Mining & Mfg Zone refining apparatus
US3058915A (en) * 1960-01-18 1962-10-16 Westinghouse Electric Corp Crystal growing process
US3152022A (en) * 1962-05-25 1964-10-06 Bell Telephone Labor Inc Epitaxial deposition on the surface of a freshly grown dendrite

Also Published As

Publication number Publication date
DE1244113B (en) 1967-07-13
SE310356B (en) 1969-04-28
US3268301A (en) 1966-08-23
CH406160A (en) 1966-01-31
NL301226A (en)

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