GB1086466A - A method for producing semiconductor crystals - Google Patents

A method for producing semiconductor crystals

Info

Publication number
GB1086466A
GB1086466A GB3610165A GB3610165A GB1086466A GB 1086466 A GB1086466 A GB 1086466A GB 3610165 A GB3610165 A GB 3610165A GB 3610165 A GB3610165 A GB 3610165A GB 1086466 A GB1086466 A GB 1086466A
Authority
GB
United Kingdom
Prior art keywords
melt
rods
impurity concentration
pulled
producing semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3610165A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Publication of GB1086466A publication Critical patent/GB1086466A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1,086,466. Crystal-pulling. DOW CORNING CORPORATION. Aug. 23, 1965 [Nov. 5, 1964], No. 36010/65. Heading BIS. A dendritic crystal 17 of doped silicon or germanium is pulled from the supercooled portion of a melt 12 which is replenished with charge material in the form of two rods 15 and 16 of different feed rates and predetermined impurity concentration which are fed to hot zones 13 and 14, the rates of feeding of the rods being adjusted so as to maintain constant the volume of the melt and produce a pulled rod of desired constant impurity concentration.
GB3610165A 1964-11-05 1965-08-23 A method for producing semiconductor crystals Expired GB1086466A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US40916364A 1964-11-05 1964-11-05

Publications (1)

Publication Number Publication Date
GB1086466A true GB1086466A (en) 1967-10-11

Family

ID=23619306

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3610165A Expired GB1086466A (en) 1964-11-05 1965-08-23 A method for producing semiconductor crystals

Country Status (4)

Country Link
BE (1) BE671823A (en)
CH (1) CH472237A (en)
GB (1) GB1086466A (en)
NL (1) NL6514217A (en)

Also Published As

Publication number Publication date
BE671823A (en) 1966-05-04
NL6514217A (en) 1966-05-06
CH472237A (en) 1969-05-15

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