CH472237A - Process for growing a doped semiconductor crystal - Google Patents

Process for growing a doped semiconductor crystal

Info

Publication number
CH472237A
CH472237A CH1294865A CH1294865A CH472237A CH 472237 A CH472237 A CH 472237A CH 1294865 A CH1294865 A CH 1294865A CH 1294865 A CH1294865 A CH 1294865A CH 472237 A CH472237 A CH 472237A
Authority
CH
Switzerland
Prior art keywords
growing
doped semiconductor
semiconductor crystal
crystal
doped
Prior art date
Application number
CH1294865A
Other languages
German (de)
Inventor
Griggs Currin Cedric
Original Assignee
Dow Corning
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning filed Critical Dow Corning
Publication of CH472237A publication Critical patent/CH472237A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CH1294865A 1964-11-05 1965-09-20 Process for growing a doped semiconductor crystal CH472237A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US40916364A 1964-11-05 1964-11-05

Publications (1)

Publication Number Publication Date
CH472237A true CH472237A (en) 1969-05-15

Family

ID=23619306

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1294865A CH472237A (en) 1964-11-05 1965-09-20 Process for growing a doped semiconductor crystal

Country Status (4)

Country Link
BE (1) BE671823A (en)
CH (1) CH472237A (en)
GB (1) GB1086466A (en)
NL (1) NL6514217A (en)

Also Published As

Publication number Publication date
GB1086466A (en) 1967-10-11
NL6514217A (en) 1966-05-06
BE671823A (en) 1966-05-04

Similar Documents

Publication Publication Date Title
AT261004B (en) Method for manufacturing a semiconductor device
AT294143B (en) Process for modifying the normal course of development of plants
AT261675B (en) Process for the epitaxial growth of semiconductor single crystals
FR1289841A (en) Single crystal growth process
AT252314B (en) Method for producing a quartz crystal component
CH517504A (en) Process for making a crystal
MY6900268A (en) Process for epitaxial crystal growth
AT249116B (en) Process for pulling single crystal semiconductor material
CH434894A (en) Device for the step-by-step adjustment of the carriage of a device
AT248172B (en) Device for growing autotrophic plants
CH420072A (en) Method for producing single-crystal semiconductor rods
CH525026A (en) Process for the production of a magnesium-aluminum-spinel single crystal
CH516476A (en) Method for producing a crystal of a compound semiconductor
AT248985B (en) Process for preparing pre-doughs
CH428688A (en) Process for growing corundum crystals
CH487505A (en) Process for preparing semiconductor crystals for a diffusion process
CH412819A (en) Process for growing dendritic semiconductor crystals
AT278096B (en) PROCESS FOR EPITACTIC CUT OFF OF A SEMICONDUCTOR LAYER
CH458299A (en) Method for producing a monocrystalline semiconductor layer
CH433191A (en) Process for the production of single crystal semiconductor material
CH472237A (en) Process for growing a doped semiconductor crystal
AT313626B (en) Device for growing plants
CH457371A (en) Process for producing high-purity silicon
AT279549B (en) Process for making crystals
CH514978A (en) Facility for growing plants

Legal Events

Date Code Title Description
PL Patent ceased