JPS5692191A - Production of single crystal and producing device using this method - Google Patents

Production of single crystal and producing device using this method

Info

Publication number
JPS5692191A
JPS5692191A JP16749579A JP16749579A JPS5692191A JP S5692191 A JPS5692191 A JP S5692191A JP 16749579 A JP16749579 A JP 16749579A JP 16749579 A JP16749579 A JP 16749579A JP S5692191 A JPS5692191 A JP S5692191A
Authority
JP
Japan
Prior art keywords
melt
crystal
single crystal
capsule agent
temp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16749579A
Other languages
Japanese (ja)
Inventor
Tsuguo Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP16749579A priority Critical patent/JPS5692191A/en
Publication of JPS5692191A publication Critical patent/JPS5692191A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To make the controlling of crystal diameter easy and obtain a single crystal of high quality by making the temp. gradient of a capsule agent covering the melt acute in the upper layer part and gentle near the solid-liquid interface from the lower layer and pulling up a seed crystal.
CONSTITUTION: Melt 4 of a desired material is contained in a crucible 1, and this melt 4 is covered thereon with a transparent liquid capsule agent 5 such as B2O3. These are contained in a high-pressure furnace 6 filled with an inert gas of high pressure. After the seed crystal 8 fitted to the end of a pulling-up bar 7 is allowed to become compatible with the melt 4, the bar 7 is pulled up while being revolved, whereby a grown crystal 12 is formed. In the above-mentioned constitution, the temp. gradient of the capsule agent 5 is set at above 150°C/cm in the upper layer and below 150°C/cm in the lower part, respectively. As a result, the scattering of, for example, P from the melt 4 decreases, and the single crystal of quality higher by, for example, 1 digit, than that of conventional ones is obtained. Here, 9 in the figure denotes a heat shielding plate, 10 a heat shielding body position moving mechanism, and 11 a crucible vertical moving mechanism, respectively.
COPYRIGHT: (C)1981,JPO&Japio
JP16749579A 1979-12-25 1979-12-25 Production of single crystal and producing device using this method Pending JPS5692191A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16749579A JPS5692191A (en) 1979-12-25 1979-12-25 Production of single crystal and producing device using this method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16749579A JPS5692191A (en) 1979-12-25 1979-12-25 Production of single crystal and producing device using this method

Publications (1)

Publication Number Publication Date
JPS5692191A true JPS5692191A (en) 1981-07-25

Family

ID=15850731

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16749579A Pending JPS5692191A (en) 1979-12-25 1979-12-25 Production of single crystal and producing device using this method

Country Status (1)

Country Link
JP (1) JPS5692191A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59232996A (en) * 1983-06-10 1984-12-27 Sumitomo Electric Ind Ltd Method and device for pulling up single crystal

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59232996A (en) * 1983-06-10 1984-12-27 Sumitomo Electric Ind Ltd Method and device for pulling up single crystal
JPH0328397B2 (en) * 1983-06-10 1991-04-18 Sumitomo Denki Kogyo Kk

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