JPS5692191A - Production of single crystal and producing device using this method - Google Patents
Production of single crystal and producing device using this methodInfo
- Publication number
- JPS5692191A JPS5692191A JP16749579A JP16749579A JPS5692191A JP S5692191 A JPS5692191 A JP S5692191A JP 16749579 A JP16749579 A JP 16749579A JP 16749579 A JP16749579 A JP 16749579A JP S5692191 A JPS5692191 A JP S5692191A
- Authority
- JP
- Japan
- Prior art keywords
- melt
- crystal
- single crystal
- capsule agent
- temp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To make the controlling of crystal diameter easy and obtain a single crystal of high quality by making the temp. gradient of a capsule agent covering the melt acute in the upper layer part and gentle near the solid-liquid interface from the lower layer and pulling up a seed crystal.
CONSTITUTION: Melt 4 of a desired material is contained in a crucible 1, and this melt 4 is covered thereon with a transparent liquid capsule agent 5 such as B2O3. These are contained in a high-pressure furnace 6 filled with an inert gas of high pressure. After the seed crystal 8 fitted to the end of a pulling-up bar 7 is allowed to become compatible with the melt 4, the bar 7 is pulled up while being revolved, whereby a grown crystal 12 is formed. In the above-mentioned constitution, the temp. gradient of the capsule agent 5 is set at above 150°C/cm in the upper layer and below 150°C/cm in the lower part, respectively. As a result, the scattering of, for example, P from the melt 4 decreases, and the single crystal of quality higher by, for example, 1 digit, than that of conventional ones is obtained. Here, 9 in the figure denotes a heat shielding plate, 10 a heat shielding body position moving mechanism, and 11 a crucible vertical moving mechanism, respectively.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16749579A JPS5692191A (en) | 1979-12-25 | 1979-12-25 | Production of single crystal and producing device using this method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16749579A JPS5692191A (en) | 1979-12-25 | 1979-12-25 | Production of single crystal and producing device using this method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5692191A true JPS5692191A (en) | 1981-07-25 |
Family
ID=15850731
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16749579A Pending JPS5692191A (en) | 1979-12-25 | 1979-12-25 | Production of single crystal and producing device using this method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5692191A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59232996A (en) * | 1983-06-10 | 1984-12-27 | Sumitomo Electric Ind Ltd | Method and device for pulling up single crystal |
-
1979
- 1979-12-25 JP JP16749579A patent/JPS5692191A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59232996A (en) * | 1983-06-10 | 1984-12-27 | Sumitomo Electric Ind Ltd | Method and device for pulling up single crystal |
JPH0328397B2 (en) * | 1983-06-10 | 1991-04-18 | Sumitomo Denki Kogyo Kk |
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