JPS57123896A - Preparation of single crystal from bi4ge3o12 - Google Patents

Preparation of single crystal from bi4ge3o12

Info

Publication number
JPS57123896A
JPS57123896A JP56009325A JP932581A JPS57123896A JP S57123896 A JPS57123896 A JP S57123896A JP 56009325 A JP56009325 A JP 56009325A JP 932581 A JP932581 A JP 932581A JP S57123896 A JPS57123896 A JP S57123896A
Authority
JP
Japan
Prior art keywords
melt
single crystal
crucible
crystal
bgo
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56009325A
Other languages
Japanese (ja)
Other versions
JPS5933560B2 (en
Inventor
Seikichi Akiyama
Mitsuru Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Showa Denko Materials Co Ltd
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP56009325A priority Critical patent/JPS5933560B2/en
Publication of JPS57123896A publication Critical patent/JPS57123896A/en
Publication of JPS5933560B2 publication Critical patent/JPS5933560B2/en
Expired legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Measurement Of Radiation (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE: To improve the yield of a void-free crystal of good quality in the pulling up method for preparing a single crystal of Bi4Ge3O12 from a high-viscocity melt, by using a crucible having a height larger than the diameter thereof.
CONSTITUTION: A crucible 1 is filled with a raw material melt 2 of Bi4Ge3O12 (BGO) molten by the high-frequency heating to a surface level 3. A seed crystal 4 is then dipped in the melt 2 and pulled up slowly while rotating to give a single crystal 5 of the BGO. When the single crystal 5 is pulled up to reduce the amount of the melt 2 and the depth of the melt 2 reaches a level 6 equal to the diameter of the single crystal 5, voids 7 are formed. In ths state, the forced convection by the rotation of the crystal will not reach the crucible wall in the case of the melt level 6 or below due to the high viscosity of BGO melt. A crucible having a height larger than the diameter thereof is used to reduce the amount of th remaining melt and improve the yield of the single crystal 5.
COPYRIGHT: (C)1982,JPO&Japio
JP56009325A 1981-01-23 1981-01-23 Bi↓4Ge↓3O↓1↓2 single crystal manufacturing method Expired JPS5933560B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56009325A JPS5933560B2 (en) 1981-01-23 1981-01-23 Bi↓4Ge↓3O↓1↓2 single crystal manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56009325A JPS5933560B2 (en) 1981-01-23 1981-01-23 Bi↓4Ge↓3O↓1↓2 single crystal manufacturing method

Publications (2)

Publication Number Publication Date
JPS57123896A true JPS57123896A (en) 1982-08-02
JPS5933560B2 JPS5933560B2 (en) 1984-08-16

Family

ID=11717316

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56009325A Expired JPS5933560B2 (en) 1981-01-23 1981-01-23 Bi↓4Ge↓3O↓1↓2 single crystal manufacturing method

Country Status (1)

Country Link
JP (1) JPS5933560B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6051694A (en) * 1983-07-07 1985-03-23 クリスマテツク・エス・ア− Manufacture of bismuth germanate single crystal with high scintillation response
CN1083498C (en) * 1996-10-02 2002-04-24 株式会社村田制作所 Oxide single crystal and method of manufacturing thereof
DE19700517B4 (en) * 1996-01-12 2010-07-15 Mitsubishi Materials Silicon Corp. single crystal growth

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6051694A (en) * 1983-07-07 1985-03-23 クリスマテツク・エス・ア− Manufacture of bismuth germanate single crystal with high scintillation response
DE19700517B4 (en) * 1996-01-12 2010-07-15 Mitsubishi Materials Silicon Corp. single crystal growth
CN1083498C (en) * 1996-10-02 2002-04-24 株式会社村田制作所 Oxide single crystal and method of manufacturing thereof

Also Published As

Publication number Publication date
JPS5933560B2 (en) 1984-08-16

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