JPS57123887A - Preparation of single crystal - Google Patents

Preparation of single crystal

Info

Publication number
JPS57123887A
JPS57123887A JP459381A JP459381A JPS57123887A JP S57123887 A JPS57123887 A JP S57123887A JP 459381 A JP459381 A JP 459381A JP 459381 A JP459381 A JP 459381A JP S57123887 A JPS57123887 A JP S57123887A
Authority
JP
Japan
Prior art keywords
crystal
seed crystal
gap
compound
rotational speed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP459381A
Other languages
Japanese (ja)
Other versions
JPS5934680B2 (en
Inventor
Jisaburo Ushizawa
Shoichi Washitsuka
Masayuki Watanabe
Tsuguo Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP459381A priority Critical patent/JPS5934680B2/en
Publication of JPS57123887A publication Critical patent/JPS57123887A/en
Publication of JPS5934680B2 publication Critical patent/JPS5934680B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: In preparing a single crystal of compound semiconductor by pulling up process of liquid capsule, to prevent the occurrence of polycrystal, by pulling up a seed crystal while a crucible containing melt of the seed crystal and a compound is being rotated at a specific rotational speed.
CONSTITUTION: The quartz crucible 2 is put in the pressure container 1, the compound 3 such as GaP, GaAs, etc. for semiconductor, having high decomposition pressure is added to the crucible B2O3 4 as a liquid capsule material is placed on the surface, and the compound is heated and melted by the heater 5. The container 1 is filled with a nitrogen atmosphere with about 70atm., and the presence of the B2O3 layer 4 prevents the GaP, etc. 3 from decomposing and evaporating. In this melt 3 the seed crystal 6 of GaP is immersed, and the seed crystal 6 is gradually pulled up while the seed crystal 6 and the quartz crystal 2 are rotated in the same direction at different speeds. The lower rotational speed is gradually raised with the drawing up of the speed crystal 6, finally made to the same speed as that of the higher rotational speed, the single crystal 7 of GaP having no polycrystal and low diameter fluctuation is pulled up and prepared.
COPYRIGHT: (C)1982,JPO&Japio
JP459381A 1981-01-17 1981-01-17 Single crystal manufacturing method Expired JPS5934680B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP459381A JPS5934680B2 (en) 1981-01-17 1981-01-17 Single crystal manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP459381A JPS5934680B2 (en) 1981-01-17 1981-01-17 Single crystal manufacturing method

Publications (2)

Publication Number Publication Date
JPS57123887A true JPS57123887A (en) 1982-08-02
JPS5934680B2 JPS5934680B2 (en) 1984-08-23

Family

ID=11588335

Family Applications (1)

Application Number Title Priority Date Filing Date
JP459381A Expired JPS5934680B2 (en) 1981-01-17 1981-01-17 Single crystal manufacturing method

Country Status (1)

Country Link
JP (1) JPS5934680B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02293394A (en) * 1989-04-18 1990-12-04 Ind Technol Res Inst Production of single-crystalline compound semiconductor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02293394A (en) * 1989-04-18 1990-12-04 Ind Technol Res Inst Production of single-crystalline compound semiconductor

Also Published As

Publication number Publication date
JPS5934680B2 (en) 1984-08-23

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