JPS5738395A - Manufacturing apparatus for semiconductor crystal - Google Patents

Manufacturing apparatus for semiconductor crystal

Info

Publication number
JPS5738395A
JPS5738395A JP10931180A JP10931180A JPS5738395A JP S5738395 A JPS5738395 A JP S5738395A JP 10931180 A JP10931180 A JP 10931180A JP 10931180 A JP10931180 A JP 10931180A JP S5738395 A JPS5738395 A JP S5738395A
Authority
JP
Japan
Prior art keywords
slag
crucible
melt
crystal
temp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10931180A
Other languages
Japanese (ja)
Inventor
Satoyoshi Kuroda
Sunao Matsubara
Masatoshi Matsuda
Tadashi Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP10931180A priority Critical patent/JPS5738395A/en
Publication of JPS5738395A publication Critical patent/JPS5738395A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To stably grow a crystal having a large diameter in the presence of floating slag by melting starting material in a crucible, rotating the crucible, stopping the rotation, setting a heat insulating plate covering the inner peripheral part of the crucible, and pulling up a crystal from the melt.
CONSTITUTION: Metallic Si is filled into a quartz crucible 1 and heated by high frequency heating or resistance heating. As the Si is melted, slag 14 rises to the surface of the melt 12. When excess slag 14 is formed, a seed crystal 10 is dipped in the melt 12 to remove the slag 14 partially. When a relatively little slag 14 is formed, by rotating the crucible 1, the slag 14 is gathered at the peripheral part of the crucible 1. After stopping the rotation of the crucible 1, a doughnut-shaped heat insulating plate 2 is fixed onto a support part 3. The temp. of the melt 12 is dropped to the m.p., and the seed crystal 10 is fitted to the melt 12 and pulled up. The temp. is further dropped to make the diameter of a crystal 13 larger. During this time, the slag 14 is kept warm by radiation from the plate 2 and is not solidified, so a crystal using the slag 14 as a nucleus is hardly grown.
COPYRIGHT: (C)1982,JPO&Japio
JP10931180A 1980-08-11 1980-08-11 Manufacturing apparatus for semiconductor crystal Pending JPS5738395A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10931180A JPS5738395A (en) 1980-08-11 1980-08-11 Manufacturing apparatus for semiconductor crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10931180A JPS5738395A (en) 1980-08-11 1980-08-11 Manufacturing apparatus for semiconductor crystal

Publications (1)

Publication Number Publication Date
JPS5738395A true JPS5738395A (en) 1982-03-03

Family

ID=14506982

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10931180A Pending JPS5738395A (en) 1980-08-11 1980-08-11 Manufacturing apparatus for semiconductor crystal

Country Status (1)

Country Link
JP (1) JPS5738395A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102719883A (en) * 2011-07-15 2012-10-10 西安华晶电子技术股份有限公司 Semiconductor monocrystal silicon production process

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4889896A (en) * 1972-02-18 1973-11-24
JPS5522329B1 (en) * 1970-03-30 1980-06-16
JPS55113693A (en) * 1979-02-23 1980-09-02 Hitachi Ltd Semiconductor single crystal producing device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5522329B1 (en) * 1970-03-30 1980-06-16
JPS4889896A (en) * 1972-02-18 1973-11-24
JPS55113693A (en) * 1979-02-23 1980-09-02 Hitachi Ltd Semiconductor single crystal producing device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102719883A (en) * 2011-07-15 2012-10-10 西安华晶电子技术股份有限公司 Semiconductor monocrystal silicon production process

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