JPS5738395A - Manufacturing apparatus for semiconductor crystal - Google Patents
Manufacturing apparatus for semiconductor crystalInfo
- Publication number
- JPS5738395A JPS5738395A JP10931180A JP10931180A JPS5738395A JP S5738395 A JPS5738395 A JP S5738395A JP 10931180 A JP10931180 A JP 10931180A JP 10931180 A JP10931180 A JP 10931180A JP S5738395 A JPS5738395 A JP S5738395A
- Authority
- JP
- Japan
- Prior art keywords
- slag
- crucible
- melt
- crystal
- temp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To stably grow a crystal having a large diameter in the presence of floating slag by melting starting material in a crucible, rotating the crucible, stopping the rotation, setting a heat insulating plate covering the inner peripheral part of the crucible, and pulling up a crystal from the melt.
CONSTITUTION: Metallic Si is filled into a quartz crucible 1 and heated by high frequency heating or resistance heating. As the Si is melted, slag 14 rises to the surface of the melt 12. When excess slag 14 is formed, a seed crystal 10 is dipped in the melt 12 to remove the slag 14 partially. When a relatively little slag 14 is formed, by rotating the crucible 1, the slag 14 is gathered at the peripheral part of the crucible 1. After stopping the rotation of the crucible 1, a doughnut-shaped heat insulating plate 2 is fixed onto a support part 3. The temp. of the melt 12 is dropped to the m.p., and the seed crystal 10 is fitted to the melt 12 and pulled up. The temp. is further dropped to make the diameter of a crystal 13 larger. During this time, the slag 14 is kept warm by radiation from the plate 2 and is not solidified, so a crystal using the slag 14 as a nucleus is hardly grown.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10931180A JPS5738395A (en) | 1980-08-11 | 1980-08-11 | Manufacturing apparatus for semiconductor crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10931180A JPS5738395A (en) | 1980-08-11 | 1980-08-11 | Manufacturing apparatus for semiconductor crystal |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5738395A true JPS5738395A (en) | 1982-03-03 |
Family
ID=14506982
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10931180A Pending JPS5738395A (en) | 1980-08-11 | 1980-08-11 | Manufacturing apparatus for semiconductor crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5738395A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102719883A (en) * | 2011-07-15 | 2012-10-10 | 西安华晶电子技术股份有限公司 | Semiconductor monocrystal silicon production process |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4889896A (en) * | 1972-02-18 | 1973-11-24 | ||
JPS5522329B1 (en) * | 1970-03-30 | 1980-06-16 | ||
JPS55113693A (en) * | 1979-02-23 | 1980-09-02 | Hitachi Ltd | Semiconductor single crystal producing device |
-
1980
- 1980-08-11 JP JP10931180A patent/JPS5738395A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5522329B1 (en) * | 1970-03-30 | 1980-06-16 | ||
JPS4889896A (en) * | 1972-02-18 | 1973-11-24 | ||
JPS55113693A (en) * | 1979-02-23 | 1980-09-02 | Hitachi Ltd | Semiconductor single crystal producing device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102719883A (en) * | 2011-07-15 | 2012-10-10 | 西安华晶电子技术股份有限公司 | Semiconductor monocrystal silicon production process |
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