JPS57179094A - Method and apparatus for manufacturing single crystal - Google Patents
Method and apparatus for manufacturing single crystalInfo
- Publication number
- JPS57179094A JPS57179094A JP6341881A JP6341881A JPS57179094A JP S57179094 A JPS57179094 A JP S57179094A JP 6341881 A JP6341881 A JP 6341881A JP 6341881 A JP6341881 A JP 6341881A JP S57179094 A JPS57179094 A JP S57179094A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- chamber
- shaft
- moved
- starting material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To considerably improve the efficiency of manufacturing single crystals by simultaneously carrying out starting material heating, starting material melting, crystal pulling, crystal cooling and crystal discharge with a pluraity of shafts.
CONSTITUTION: A polycrystalline starting material rod 10 is attached to a shaft 6 in a standby chamber 9 and heated with a heater 11. A shutter 14 is opened to move the shaft 6 to the center of a furnace chamber 4, and the rod 10 is put in a crucible 2 and slowly melted. After throughly melting the rod 10, a seed crystal is attached to the shaft 6, and a single crystal 1 is pulled up while being slowly rotated. After finishing the crystal growth in the chamber 4, the single crystal 1 is moved to the position of a heater 16 heating the crystal 1. A shutter 15 is then opened to move the shaft 6 and the crystal 1 to a cooling chamber 12, where the crystal 1 is cooled at a prescribed rate. At the same time, other shaft 6 in the chamber 9 is moved to the chamber 4 to pull up a single crystal 1. When the crystal 1 in the chamber 12 is perfectly cooled, it is detached from the shaft 6, and the shaft 6 is moved to the chamber 9. Said operation is repeated in order.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6341881A JPS57179094A (en) | 1981-04-28 | 1981-04-28 | Method and apparatus for manufacturing single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6341881A JPS57179094A (en) | 1981-04-28 | 1981-04-28 | Method and apparatus for manufacturing single crystal |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57179094A true JPS57179094A (en) | 1982-11-04 |
Family
ID=13228716
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6341881A Pending JPS57179094A (en) | 1981-04-28 | 1981-04-28 | Method and apparatus for manufacturing single crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57179094A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4623423A (en) * | 1982-05-04 | 1986-11-18 | Commissariat A L'energie Atomique | Process for producing a strain-free monocrystal of a crystalline ferroelectric compound |
US4662982A (en) * | 1983-08-30 | 1987-05-05 | Instytut Technologii Materialow Elektronicznych | Method of producing crystals of materials for use in the electronic industry |
KR100448923B1 (en) * | 2000-12-01 | 2004-09-18 | 가부시끼가이샤 도시바 | Apparatus and method for producing a single crystal |
-
1981
- 1981-04-28 JP JP6341881A patent/JPS57179094A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4623423A (en) * | 1982-05-04 | 1986-11-18 | Commissariat A L'energie Atomique | Process for producing a strain-free monocrystal of a crystalline ferroelectric compound |
US4662982A (en) * | 1983-08-30 | 1987-05-05 | Instytut Technologii Materialow Elektronicznych | Method of producing crystals of materials for use in the electronic industry |
KR100448923B1 (en) * | 2000-12-01 | 2004-09-18 | 가부시끼가이샤 도시바 | Apparatus and method for producing a single crystal |
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