JPS57179094A - Method and apparatus for manufacturing single crystal - Google Patents

Method and apparatus for manufacturing single crystal

Info

Publication number
JPS57179094A
JPS57179094A JP6341881A JP6341881A JPS57179094A JP S57179094 A JPS57179094 A JP S57179094A JP 6341881 A JP6341881 A JP 6341881A JP 6341881 A JP6341881 A JP 6341881A JP S57179094 A JPS57179094 A JP S57179094A
Authority
JP
Japan
Prior art keywords
crystal
chamber
shaft
moved
starting material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6341881A
Other languages
Japanese (ja)
Inventor
Masanori Kogo
Akira Isono
Shotaro Otsuki
Kengo Ono
Takashi Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TOUHOKU KINZOKU KOGYO KK
Tokin Corp
Original Assignee
TOUHOKU KINZOKU KOGYO KK
Tohoku Metal Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TOUHOKU KINZOKU KOGYO KK, Tohoku Metal Industries Ltd filed Critical TOUHOKU KINZOKU KOGYO KK
Priority to JP6341881A priority Critical patent/JPS57179094A/en
Publication of JPS57179094A publication Critical patent/JPS57179094A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To considerably improve the efficiency of manufacturing single crystals by simultaneously carrying out starting material heating, starting material melting, crystal pulling, crystal cooling and crystal discharge with a pluraity of shafts.
CONSTITUTION: A polycrystalline starting material rod 10 is attached to a shaft 6 in a standby chamber 9 and heated with a heater 11. A shutter 14 is opened to move the shaft 6 to the center of a furnace chamber 4, and the rod 10 is put in a crucible 2 and slowly melted. After throughly melting the rod 10, a seed crystal is attached to the shaft 6, and a single crystal 1 is pulled up while being slowly rotated. After finishing the crystal growth in the chamber 4, the single crystal 1 is moved to the position of a heater 16 heating the crystal 1. A shutter 15 is then opened to move the shaft 6 and the crystal 1 to a cooling chamber 12, where the crystal 1 is cooled at a prescribed rate. At the same time, other shaft 6 in the chamber 9 is moved to the chamber 4 to pull up a single crystal 1. When the crystal 1 in the chamber 12 is perfectly cooled, it is detached from the shaft 6, and the shaft 6 is moved to the chamber 9. Said operation is repeated in order.
COPYRIGHT: (C)1982,JPO&Japio
JP6341881A 1981-04-28 1981-04-28 Method and apparatus for manufacturing single crystal Pending JPS57179094A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6341881A JPS57179094A (en) 1981-04-28 1981-04-28 Method and apparatus for manufacturing single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6341881A JPS57179094A (en) 1981-04-28 1981-04-28 Method and apparatus for manufacturing single crystal

Publications (1)

Publication Number Publication Date
JPS57179094A true JPS57179094A (en) 1982-11-04

Family

ID=13228716

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6341881A Pending JPS57179094A (en) 1981-04-28 1981-04-28 Method and apparatus for manufacturing single crystal

Country Status (1)

Country Link
JP (1) JPS57179094A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4623423A (en) * 1982-05-04 1986-11-18 Commissariat A L'energie Atomique Process for producing a strain-free monocrystal of a crystalline ferroelectric compound
US4662982A (en) * 1983-08-30 1987-05-05 Instytut Technologii Materialow Elektronicznych Method of producing crystals of materials for use in the electronic industry
KR100448923B1 (en) * 2000-12-01 2004-09-18 가부시끼가이샤 도시바 Apparatus and method for producing a single crystal

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4623423A (en) * 1982-05-04 1986-11-18 Commissariat A L'energie Atomique Process for producing a strain-free monocrystal of a crystalline ferroelectric compound
US4662982A (en) * 1983-08-30 1987-05-05 Instytut Technologii Materialow Elektronicznych Method of producing crystals of materials for use in the electronic industry
KR100448923B1 (en) * 2000-12-01 2004-09-18 가부시끼가이샤 도시바 Apparatus and method for producing a single crystal

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