JPS6469589A - Process for growing compound semiconductor single crystal - Google Patents

Process for growing compound semiconductor single crystal

Info

Publication number
JPS6469589A
JPS6469589A JP22357687A JP22357687A JPS6469589A JP S6469589 A JPS6469589 A JP S6469589A JP 22357687 A JP22357687 A JP 22357687A JP 22357687 A JP22357687 A JP 22357687A JP S6469589 A JPS6469589 A JP S6469589A
Authority
JP
Japan
Prior art keywords
crystal
temperature gradient
zone
compound semiconductor
semiconductor single
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22357687A
Other languages
Japanese (ja)
Other versions
JP2645491B2 (en
Inventor
Keiji Katagiri
Manabu Kano
Osamu Oda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eneos Corp
Original Assignee
Nippon Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mining Co Ltd filed Critical Nippon Mining Co Ltd
Priority to JP62223576A priority Critical patent/JP2645491B2/en
Publication of JPS6469589A publication Critical patent/JPS6469589A/en
Application granted granted Critical
Publication of JP2645491B2 publication Critical patent/JP2645491B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To obtain a high-quality compound semiconductor single crystal, by controlling the temperature gradient in a space above inner molten liquid of a crucible to a nearly uniform state in the growth of the crystal by Czochralski method and lowering the temperature in the furnace after transferring the grown crystal into the uniform temperature gradient zone in the cooling of the crystal after the completion of crystal growth. CONSTITUTION:A raw material is melted in a crucible 2 with heat and a crystal 10 is slowly pulled up from the molten liquid 7 to effect the growth of a compound semiconductor single crystal. The process is carried out by the following procedure. A zone having nearly uniform temperature gradient in vertical direction above the molten liquid 7 (e.g. the zone below the inflection point of the temperature gradient in the figure B) is formed by a heating means or by a heating and heat-insulation means (e.g. heater 4) disposed around the crucible 2 and, after the completion of pulling up of the crystal, the crystal 10 is transferred into the above uniform temperature gradient zone and then the temperature in the furnace is lowered to cool the crystal.
JP62223576A 1987-09-07 1987-09-07 Method for growing compound semiconductor single crystal Expired - Lifetime JP2645491B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62223576A JP2645491B2 (en) 1987-09-07 1987-09-07 Method for growing compound semiconductor single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62223576A JP2645491B2 (en) 1987-09-07 1987-09-07 Method for growing compound semiconductor single crystal

Publications (2)

Publication Number Publication Date
JPS6469589A true JPS6469589A (en) 1989-03-15
JP2645491B2 JP2645491B2 (en) 1997-08-25

Family

ID=16800328

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62223576A Expired - Lifetime JP2645491B2 (en) 1987-09-07 1987-09-07 Method for growing compound semiconductor single crystal

Country Status (1)

Country Link
JP (1) JP2645491B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004083407A (en) * 2002-08-24 2004-03-18 Carl Zeiss Stiftung Method and device for growing corundum single crystal

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6046998A (en) * 1983-08-26 1985-03-14 Sumitomo Electric Ind Ltd Pulling up of single crystal and its device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6046998A (en) * 1983-08-26 1985-03-14 Sumitomo Electric Ind Ltd Pulling up of single crystal and its device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004083407A (en) * 2002-08-24 2004-03-18 Carl Zeiss Stiftung Method and device for growing corundum single crystal

Also Published As

Publication number Publication date
JP2645491B2 (en) 1997-08-25

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