JPS553312A - Production of oxide single crystal - Google Patents

Production of oxide single crystal

Info

Publication number
JPS553312A
JPS553312A JP7246378A JP7246378A JPS553312A JP S553312 A JPS553312 A JP S553312A JP 7246378 A JP7246378 A JP 7246378A JP 7246378 A JP7246378 A JP 7246378A JP S553312 A JPS553312 A JP S553312A
Authority
JP
Japan
Prior art keywords
crystal
single crystal
melt
temp
gradient
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7246378A
Other languages
Japanese (ja)
Other versions
JPS619280B2 (en
Inventor
Tsuguo Fukuda
Sadao Matsumura
Hitoshi Hirano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7246378A priority Critical patent/JPS553312A/en
Publication of JPS553312A publication Critical patent/JPS553312A/en
Publication of JPS619280B2 publication Critical patent/JPS619280B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

PURPOSE: To easily produce a long oxide single crystal of high quality by restricting the temp. gradient at a specified position right above a melt to prevent the crystal from bending during pulling in production of the crystal of low heat conductivity by a pulling method.
CONSTITUTION: An oxide single crystal of low heat conductivity, e.g. LiTaO3 is produced by pulling in the X axis direction as follows: by working electrically conductive support 9 seed crystal 10 is dipped in melt 8 and pulled while rotating to grow a rod-shaped crystal. At this time, the temp. gradient at a position 5 mm right above melt 8 is regulated to below 45°/cm, and the temp. gradient at a position 30 mm above melt 8 to above 25°/cm. The gradients are regulated by changing the shapes, structures, sizes, etc. of refractories and after-heater 6 in refractory crucible 1. By this method a LiTaO3 single crystal of large size and high quality is obtd., and it is suitable for a PIF surface liquid filter for TV, etc.
COPYRIGHT: (C)1980,JPO&Japio
JP7246378A 1978-06-15 1978-06-15 Production of oxide single crystal Granted JPS553312A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7246378A JPS553312A (en) 1978-06-15 1978-06-15 Production of oxide single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7246378A JPS553312A (en) 1978-06-15 1978-06-15 Production of oxide single crystal

Publications (2)

Publication Number Publication Date
JPS553312A true JPS553312A (en) 1980-01-11
JPS619280B2 JPS619280B2 (en) 1986-03-20

Family

ID=13490015

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7246378A Granted JPS553312A (en) 1978-06-15 1978-06-15 Production of oxide single crystal

Country Status (1)

Country Link
JP (1) JPS553312A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61178490A (en) * 1985-02-04 1986-08-11 Agency Of Ind Science & Technol Heater for single crystal pulling up apparatus
JPS62187194A (en) * 1986-02-10 1987-08-15 Sumitomo Electric Ind Ltd Method for growing oxide single crystal

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61178490A (en) * 1985-02-04 1986-08-11 Agency Of Ind Science & Technol Heater for single crystal pulling up apparatus
JPH0329752B2 (en) * 1985-02-04 1991-04-25
JPS62187194A (en) * 1986-02-10 1987-08-15 Sumitomo Electric Ind Ltd Method for growing oxide single crystal

Also Published As

Publication number Publication date
JPS619280B2 (en) 1986-03-20

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