JPS55167200A - Crystal growing method - Google Patents

Crystal growing method

Info

Publication number
JPS55167200A
JPS55167200A JP7571379A JP7571379A JPS55167200A JP S55167200 A JPS55167200 A JP S55167200A JP 7571379 A JP7571379 A JP 7571379A JP 7571379 A JP7571379 A JP 7571379A JP S55167200 A JPS55167200 A JP S55167200A
Authority
JP
Japan
Prior art keywords
silicon
melt
single crystal
polycrystal
grow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7571379A
Other languages
Japanese (ja)
Inventor
Satoyoshi Kuroda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7571379A priority Critical patent/JPS55167200A/en
Publication of JPS55167200A publication Critical patent/JPS55167200A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To grow single crystal silicon applicable to a solar battery, etc. by contacting polycrystal silicon to the surface of a crude silicon melt and pulling up it to reduce impurites in the melt.
CONSTITUTION: Polycrystal silicon 4 is contacted to the surface of crude metallic silicon melt 2 in quartz crucible 1 and pulled up at a rate of about 1mm/min while being rotated at about 10rpm after lowering the temp. by 2W3°C. As a result, silicon contg. much slag 3 deposits on the bottom of polycrystal silicon 4 and grows, thereby removing most of impurities contained in melt 2 and enhancing the purity of the remaining melt in crucible 1. A seed crystal is then added to this melt to grow a silicon single crystal.
COPYRIGHT: (C)1980,JPO&Japio
JP7571379A 1979-06-18 1979-06-18 Crystal growing method Pending JPS55167200A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7571379A JPS55167200A (en) 1979-06-18 1979-06-18 Crystal growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7571379A JPS55167200A (en) 1979-06-18 1979-06-18 Crystal growing method

Publications (1)

Publication Number Publication Date
JPS55167200A true JPS55167200A (en) 1980-12-26

Family

ID=13584152

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7571379A Pending JPS55167200A (en) 1979-06-18 1979-06-18 Crystal growing method

Country Status (1)

Country Link
JP (1) JPS55167200A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03285893A (en) * 1990-03-30 1991-12-17 Shin Etsu Handotai Co Ltd Crystal pulling-up apparatus
WO2010098676A1 (en) * 2009-02-26 2010-09-02 Harsharn Tathgar Method for the production of solar grade silicon
CN102732962A (en) * 2012-06-06 2012-10-17 海润光伏科技股份有限公司 Method for casting efficient large-crystal-grain silicon ingots

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5135599A (en) * 1974-09-19 1976-03-26 Keino Koji Biruherupu * datsushitsukyo *
JPS5532787A (en) * 1978-07-18 1980-03-07 Motorola Inc Crystal growth by continuous purification

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5135599A (en) * 1974-09-19 1976-03-26 Keino Koji Biruherupu * datsushitsukyo *
JPS5532787A (en) * 1978-07-18 1980-03-07 Motorola Inc Crystal growth by continuous purification

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03285893A (en) * 1990-03-30 1991-12-17 Shin Etsu Handotai Co Ltd Crystal pulling-up apparatus
WO2010098676A1 (en) * 2009-02-26 2010-09-02 Harsharn Tathgar Method for the production of solar grade silicon
CN102333726A (en) * 2009-02-26 2012-01-25 哈山恩·塔沙格 Method for the production of solar grade silicon
CN102732962A (en) * 2012-06-06 2012-10-17 海润光伏科技股份有限公司 Method for casting efficient large-crystal-grain silicon ingots

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