JPS57118087A - Manufacture of single crystal - Google Patents

Manufacture of single crystal

Info

Publication number
JPS57118087A
JPS57118087A JP12281A JP12281A JPS57118087A JP S57118087 A JPS57118087 A JP S57118087A JP 12281 A JP12281 A JP 12281A JP 12281 A JP12281 A JP 12281A JP S57118087 A JPS57118087 A JP S57118087A
Authority
JP
Japan
Prior art keywords
single crystal
crystal
temp
crack
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12281A
Other languages
Japanese (ja)
Other versions
JPH0152360B2 (en
Inventor
Satao Yashiro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12281A priority Critical patent/JPS57118087A/en
Publication of JPS57118087A publication Critical patent/JPS57118087A/en
Publication of JPH0152360B2 publication Critical patent/JPH0152360B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To manufacture a single crystal free from a crack in a high yield by slowly cooling a single crystal formed by a pulling method to a specified temp. and by heat treating the cooled crystal.
CONSTITUTION: Starting material such as LiNbO3 is put in a platinum crucible 4 set in a refractory crucible 6, and by electrifying a high frequency coil 7, the material is melted by heating. A seed crystal 1 is dipped in the melt 3 and pulled up to obtain a single crystal 2. This crystal 2 is slowly cooled so that the temp. is not dropped to room temp. +60°C or below. the resulting single crystal 11 is put in the core tube 15 of a heat treatment furnace and heat treated. Thus, by heat treating the hot crystal without cooling to room temp., the uneven distribution of dislocation, etc. is made dispersive, thereby relieving the thermal strain, and a single crystal free from a crack is obtd.
COPYRIGHT: (C)1982,JPO&Japio
JP12281A 1981-01-06 1981-01-06 Manufacture of single crystal Granted JPS57118087A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12281A JPS57118087A (en) 1981-01-06 1981-01-06 Manufacture of single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12281A JPS57118087A (en) 1981-01-06 1981-01-06 Manufacture of single crystal

Publications (2)

Publication Number Publication Date
JPS57118087A true JPS57118087A (en) 1982-07-22
JPH0152360B2 JPH0152360B2 (en) 1989-11-08

Family

ID=11465228

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12281A Granted JPS57118087A (en) 1981-01-06 1981-01-06 Manufacture of single crystal

Country Status (1)

Country Link
JP (1) JPS57118087A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59227799A (en) * 1983-06-07 1984-12-21 Fujitsu Ltd Method for annealing oxide single crystal
JP2019156696A (en) * 2018-03-15 2019-09-19 住友金属鉱山株式会社 Single crystal conveyor and single crystal conveyance method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59227799A (en) * 1983-06-07 1984-12-21 Fujitsu Ltd Method for annealing oxide single crystal
JPH0367999B2 (en) * 1983-06-07 1991-10-24 Fujitsu Ltd
JP2019156696A (en) * 2018-03-15 2019-09-19 住友金属鉱山株式会社 Single crystal conveyor and single crystal conveyance method

Also Published As

Publication number Publication date
JPH0152360B2 (en) 1989-11-08

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