JPS57118087A - Manufacture of single crystal - Google Patents
Manufacture of single crystalInfo
- Publication number
- JPS57118087A JPS57118087A JP12281A JP12281A JPS57118087A JP S57118087 A JPS57118087 A JP S57118087A JP 12281 A JP12281 A JP 12281A JP 12281 A JP12281 A JP 12281A JP S57118087 A JPS57118087 A JP S57118087A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crystal
- temp
- crack
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To manufacture a single crystal free from a crack in a high yield by slowly cooling a single crystal formed by a pulling method to a specified temp. and by heat treating the cooled crystal.
CONSTITUTION: Starting material such as LiNbO3 is put in a platinum crucible 4 set in a refractory crucible 6, and by electrifying a high frequency coil 7, the material is melted by heating. A seed crystal 1 is dipped in the melt 3 and pulled up to obtain a single crystal 2. This crystal 2 is slowly cooled so that the temp. is not dropped to room temp. +60°C or below. the resulting single crystal 11 is put in the core tube 15 of a heat treatment furnace and heat treated. Thus, by heat treating the hot crystal without cooling to room temp., the uneven distribution of dislocation, etc. is made dispersive, thereby relieving the thermal strain, and a single crystal free from a crack is obtd.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12281A JPS57118087A (en) | 1981-01-06 | 1981-01-06 | Manufacture of single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12281A JPS57118087A (en) | 1981-01-06 | 1981-01-06 | Manufacture of single crystal |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57118087A true JPS57118087A (en) | 1982-07-22 |
JPH0152360B2 JPH0152360B2 (en) | 1989-11-08 |
Family
ID=11465228
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12281A Granted JPS57118087A (en) | 1981-01-06 | 1981-01-06 | Manufacture of single crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57118087A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59227799A (en) * | 1983-06-07 | 1984-12-21 | Fujitsu Ltd | Method for annealing oxide single crystal |
JP2019156696A (en) * | 2018-03-15 | 2019-09-19 | 住友金属鉱山株式会社 | Single crystal conveyor and single crystal conveyance method |
-
1981
- 1981-01-06 JP JP12281A patent/JPS57118087A/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59227799A (en) * | 1983-06-07 | 1984-12-21 | Fujitsu Ltd | Method for annealing oxide single crystal |
JPH0367999B2 (en) * | 1983-06-07 | 1991-10-24 | Fujitsu Ltd | |
JP2019156696A (en) * | 2018-03-15 | 2019-09-19 | 住友金属鉱山株式会社 | Single crystal conveyor and single crystal conveyance method |
Also Published As
Publication number | Publication date |
---|---|
JPH0152360B2 (en) | 1989-11-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CA1312205C (en) | Method for rapid induction heating of molten glass or the like | |
ATE16473T1 (en) | PROCESSES AND FURNACES FOR THE PRODUCTION OF SILICON CARBIDE. | |
JPS5580798A (en) | Ribbon crystal growing method by lateral pulling | |
JPS57118087A (en) | Manufacture of single crystal | |
JPS5723026A (en) | Spheroidization treatment for bar steel material | |
GB740229A (en) | Improvements in or relating to purification process for isolating soluble impuritiesfrom fusible solid substances | |
JPS5645894A (en) | Reducing method for defect of silicon single crystal | |
JPS57169020A (en) | Production of high tensile steel bar | |
JP3128173B2 (en) | Method and apparatus for producing bismuth germanate single crystal | |
JPS55126597A (en) | Single crystal growing method | |
ATE85033T1 (en) | PROCESS FOR THE PRODUCTION OF POLYCRYSTALLINE MATERIAL AND APPARATUS THEREOF. | |
JPS6418988A (en) | Single crystal growth unit | |
JPS54128988A (en) | Preparation of single crystal | |
JPS5515939A (en) | Production of single crystal | |
JPS57179094A (en) | Method and apparatus for manufacturing single crystal | |
JPS57183393A (en) | Apparatus for growing single crystal | |
JPS55113695A (en) | Single crystal growing device | |
JPS5711896A (en) | Production of single crystal | |
JPS5595608A (en) | Heat treating method for carbon material | |
JPS5588903A (en) | Manufacture of hot coil of continuously casting slab for stainless steel by direct feed rolling | |
JPS5645893A (en) | Reducing method for defect of silicon single crystal | |
JPS5654299A (en) | Growing method of lead molybdate single crystal | |
JPS5560092A (en) | Production of single crystal | |
JPS57123890A (en) | Furnace for pulling up single crystal | |
JPS5761696A (en) | Manufacturing of single crystal |