JPS56114900A - Preparation of insb single crystal - Google Patents
Preparation of insb single crystalInfo
- Publication number
- JPS56114900A JPS56114900A JP1751880A JP1751880A JPS56114900A JP S56114900 A JPS56114900 A JP S56114900A JP 1751880 A JP1751880 A JP 1751880A JP 1751880 A JP1751880 A JP 1751880A JP S56114900 A JPS56114900 A JP S56114900A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- molten liquid
- pulling
- insb single
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To prepare a high quality InSb single crystal, by pulling the InSb single crystal keeping the vertical temperature gradient just above the molten liquid and the rate of pulling at specific levels.
CONSTITUTION: In the preparation of InSb single crystal by the pulling process, the vertical temperature gradient just above the molten liquid surface is maintained at 35W105°C/min, and the rate of pulling is selected to ≥5mm/hr. Preferably, the temperature distribution curve has a plateau region of ≥1cm in length beginning from a point within 1cm from the surface of the molten liquid and having the temperature deviation of ≤5°C. In the case of the solid line B in the figure, the temperature gradient just above the surface of the molten liquid can be obtained from the region I. The gradient can be reduced by placing the surface of the molten liquid near the center of the oven.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1751880A JPS56114900A (en) | 1980-02-15 | 1980-02-15 | Preparation of insb single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1751880A JPS56114900A (en) | 1980-02-15 | 1980-02-15 | Preparation of insb single crystal |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56114900A true JPS56114900A (en) | 1981-09-09 |
Family
ID=11946169
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1751880A Pending JPS56114900A (en) | 1980-02-15 | 1980-02-15 | Preparation of insb single crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56114900A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102154705A (en) * | 2011-03-15 | 2011-08-17 | 上海大学 | Preparation method of indium antimonide nanocrystal |
-
1980
- 1980-02-15 JP JP1751880A patent/JPS56114900A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102154705A (en) * | 2011-03-15 | 2011-08-17 | 上海大学 | Preparation method of indium antimonide nanocrystal |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
MY103936A (en) | Manufacturing method and equipment of single silicon crystal | |
JPS5556098A (en) | Method and apparatus for producing si single crystal rod | |
JPS5792591A (en) | Production of single crystal | |
JPS56114900A (en) | Preparation of insb single crystal | |
JPS549174A (en) | Method of producing seingle crystal | |
JPS573800A (en) | Heat-treating method of single crystal | |
JPS56100200A (en) | Method and apparatus for manufacturing gallium arsenide single crystal | |
JPS54128988A (en) | Preparation of single crystal | |
JPS5276277A (en) | Producing long and narrow crystal | |
JPS5645890A (en) | Crystal growing apparatus | |
JPS55140800A (en) | Crucible for crystal growing crucible device | |
JPS57118091A (en) | Manufacturing apparatus for beltlike silicon crystal | |
JPS5413477A (en) | Continuous growing apparatus for single crystal | |
JPS5555521A (en) | Method of epitaxial growth at liquid phase | |
JPS57166394A (en) | Preparing apparatus of ribbon-like crystal | |
JPS52120290A (en) | Production of gap single crystal | |
JPS52111473A (en) | Ribbon crystal growth method | |
JPS54156007A (en) | Productin of metallurgical coke | |
JPS55114436A (en) | Production of turbine blade material having crystal directivity | |
JPS57166395A (en) | Preparing apparatus of ribbon-like crystal | |
JPS52149273A (en) | Production of plate-shaped crystal | |
JPS57175796A (en) | Liquid phase epitaxial growth | |
JPS538375A (en) | Method and apparatus for pulling up single crystal | |
JPS5688895A (en) | Growth of single crystal | |
JPS5543121A (en) | Removal of monomer from polystyrene resin |