JPS56114900A - Preparation of insb single crystal - Google Patents

Preparation of insb single crystal

Info

Publication number
JPS56114900A
JPS56114900A JP1751880A JP1751880A JPS56114900A JP S56114900 A JPS56114900 A JP S56114900A JP 1751880 A JP1751880 A JP 1751880A JP 1751880 A JP1751880 A JP 1751880A JP S56114900 A JPS56114900 A JP S56114900A
Authority
JP
Japan
Prior art keywords
single crystal
molten liquid
pulling
insb single
preparation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1751880A
Other languages
Japanese (ja)
Inventor
Kazutaka Terajima
Shoichi Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP1751880A priority Critical patent/JPS56114900A/en
Publication of JPS56114900A publication Critical patent/JPS56114900A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To prepare a high quality InSb single crystal, by pulling the InSb single crystal keeping the vertical temperature gradient just above the molten liquid and the rate of pulling at specific levels.
CONSTITUTION: In the preparation of InSb single crystal by the pulling process, the vertical temperature gradient just above the molten liquid surface is maintained at 35W105°C/min, and the rate of pulling is selected to ≥5mm/hr. Preferably, the temperature distribution curve has a plateau region of ≥1cm in length beginning from a point within 1cm from the surface of the molten liquid and having the temperature deviation of ≤5°C. In the case of the solid line B in the figure, the temperature gradient just above the surface of the molten liquid can be obtained from the region I. The gradient can be reduced by placing the surface of the molten liquid near the center of the oven.
COPYRIGHT: (C)1981,JPO&Japio
JP1751880A 1980-02-15 1980-02-15 Preparation of insb single crystal Pending JPS56114900A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1751880A JPS56114900A (en) 1980-02-15 1980-02-15 Preparation of insb single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1751880A JPS56114900A (en) 1980-02-15 1980-02-15 Preparation of insb single crystal

Publications (1)

Publication Number Publication Date
JPS56114900A true JPS56114900A (en) 1981-09-09

Family

ID=11946169

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1751880A Pending JPS56114900A (en) 1980-02-15 1980-02-15 Preparation of insb single crystal

Country Status (1)

Country Link
JP (1) JPS56114900A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102154705A (en) * 2011-03-15 2011-08-17 上海大学 Preparation method of indium antimonide nanocrystal

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102154705A (en) * 2011-03-15 2011-08-17 上海大学 Preparation method of indium antimonide nanocrystal

Similar Documents

Publication Publication Date Title
MY103936A (en) Manufacturing method and equipment of single silicon crystal
JPS5556098A (en) Method and apparatus for producing si single crystal rod
JPS5792591A (en) Production of single crystal
JPS56114900A (en) Preparation of insb single crystal
JPS549174A (en) Method of producing seingle crystal
JPS573800A (en) Heat-treating method of single crystal
JPS56100200A (en) Method and apparatus for manufacturing gallium arsenide single crystal
JPS54128988A (en) Preparation of single crystal
JPS5276277A (en) Producing long and narrow crystal
JPS5645890A (en) Crystal growing apparatus
JPS55140800A (en) Crucible for crystal growing crucible device
JPS57118091A (en) Manufacturing apparatus for beltlike silicon crystal
JPS5413477A (en) Continuous growing apparatus for single crystal
JPS5555521A (en) Method of epitaxial growth at liquid phase
JPS57166394A (en) Preparing apparatus of ribbon-like crystal
JPS52120290A (en) Production of gap single crystal
JPS52111473A (en) Ribbon crystal growth method
JPS54156007A (en) Productin of metallurgical coke
JPS55114436A (en) Production of turbine blade material having crystal directivity
JPS57166395A (en) Preparing apparatus of ribbon-like crystal
JPS52149273A (en) Production of plate-shaped crystal
JPS57175796A (en) Liquid phase epitaxial growth
JPS538375A (en) Method and apparatus for pulling up single crystal
JPS5688895A (en) Growth of single crystal
JPS5543121A (en) Removal of monomer from polystyrene resin