JPS573800A - Heat-treating method of single crystal - Google Patents
Heat-treating method of single crystalInfo
- Publication number
- JPS573800A JPS573800A JP7487380A JP7487380A JPS573800A JP S573800 A JPS573800 A JP S573800A JP 7487380 A JP7487380 A JP 7487380A JP 7487380 A JP7487380 A JP 7487380A JP S573800 A JPS573800 A JP S573800A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- powder
- cracks
- litao
- embedded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title abstract 7
- 238000000034 method Methods 0.000 title abstract 2
- 239000000843 powder Substances 0.000 abstract 4
- 229910012463 LiTaO3 Inorganic materials 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 239000000919 ceramic Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 230000001902 propagating effect Effects 0.000 abstract 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To obtain prescribed parts in high yield without forming cracks, by heating a grown single crystal embedded in a powder of the same composition as that of the single crystal.
CONSTITUTION: A grown single crystal 11 of LiTaO3 is embedded in a powder 13 of the LiTaO3 filled in a ceramic container 12, and the container 12 is then placed in a heating furnace 14 and heated according to a prescribed temperature increasing curve. Thus, the single crystal 11 can be heated slowly and uniformly via the powder 13 without forming cracks on the surface thereof. If fine cracks are present at the edge thereof, the internal strain is relaxed without propagating and enlarging the cracks. The average particle diameter of the powder 13 is preferably 500μ or less, most preferably 300μ or less. According to the method, prescribed parts can be obtained in high yield by growing a piezoelectric single crystal, and processing the grown single crystal.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7487380A JPS573800A (en) | 1980-06-05 | 1980-06-05 | Heat-treating method of single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7487380A JPS573800A (en) | 1980-06-05 | 1980-06-05 | Heat-treating method of single crystal |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS573800A true JPS573800A (en) | 1982-01-09 |
Family
ID=13559884
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7487380A Pending JPS573800A (en) | 1980-06-05 | 1980-06-05 | Heat-treating method of single crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS573800A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63310800A (en) * | 1987-06-10 | 1988-12-19 | Fujitsu Ltd | Formation of single domain of single crystal |
WO2004079061A1 (en) * | 2003-03-06 | 2004-09-16 | Shin-Etsu Chemical Co., Ltd. | Process for producing lithium tantalate crystal |
WO2005038098A1 (en) * | 2003-10-16 | 2005-04-28 | Sumitomo Metal Mining Co., Ltd. | Lithium tantalate substrate and method for producing same |
WO2005038099A1 (en) * | 2003-10-16 | 2005-04-28 | Sumitomo Metal Mining Co., Ltd. | Lithium tantalate substrate and method for producing same |
WO2006051610A1 (en) * | 2004-11-15 | 2006-05-18 | Shin-Etsu Chemical Co., Ltd. | Method for producing lithium tantalate crystal |
US7374612B2 (en) | 2003-09-26 | 2008-05-20 | Shin-Etsu Chemical Co., Ltd. | Method of producing single-polarized lithium tantalate crystal and single-polarized lithium tantalate crystal |
JP2010064919A (en) * | 2008-09-10 | 2010-03-25 | Showa Denko Kk | Method for annealing silicon carbide single crystal material, silicon carbide single crystal wafer, and silicon carbide semiconductor |
JP2019202915A (en) * | 2018-05-24 | 2019-11-28 | 住友金属鉱山株式会社 | Heat treatment method for oxide single crystal |
-
1980
- 1980-06-05 JP JP7487380A patent/JPS573800A/en active Pending
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63310800A (en) * | 1987-06-10 | 1988-12-19 | Fujitsu Ltd | Formation of single domain of single crystal |
WO2004079061A1 (en) * | 2003-03-06 | 2004-09-16 | Shin-Etsu Chemical Co., Ltd. | Process for producing lithium tantalate crystal |
US7323050B2 (en) | 2003-03-06 | 2008-01-29 | Shin-Etsu Chemical Co., Ltd. | Method of producing lithium tantalate crystal |
US7374612B2 (en) | 2003-09-26 | 2008-05-20 | Shin-Etsu Chemical Co., Ltd. | Method of producing single-polarized lithium tantalate crystal and single-polarized lithium tantalate crystal |
WO2005038098A1 (en) * | 2003-10-16 | 2005-04-28 | Sumitomo Metal Mining Co., Ltd. | Lithium tantalate substrate and method for producing same |
WO2005038099A1 (en) * | 2003-10-16 | 2005-04-28 | Sumitomo Metal Mining Co., Ltd. | Lithium tantalate substrate and method for producing same |
US7442250B2 (en) | 2003-10-16 | 2008-10-28 | Sumitomo Metal Mining Co., Ltd. | Lithium tantalate substrate and method for producing same |
US7713511B2 (en) | 2003-10-16 | 2010-05-11 | Sumitomo Metal Mining Co., Ltd. | Lithium tantalate substrate and process for its manufacture |
WO2006051610A1 (en) * | 2004-11-15 | 2006-05-18 | Shin-Etsu Chemical Co., Ltd. | Method for producing lithium tantalate crystal |
JP2010064919A (en) * | 2008-09-10 | 2010-03-25 | Showa Denko Kk | Method for annealing silicon carbide single crystal material, silicon carbide single crystal wafer, and silicon carbide semiconductor |
JP2019202915A (en) * | 2018-05-24 | 2019-11-28 | 住友金属鉱山株式会社 | Heat treatment method for oxide single crystal |
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