JPS573800A - Heat-treating method of single crystal - Google Patents

Heat-treating method of single crystal

Info

Publication number
JPS573800A
JPS573800A JP7487380A JP7487380A JPS573800A JP S573800 A JPS573800 A JP S573800A JP 7487380 A JP7487380 A JP 7487380A JP 7487380 A JP7487380 A JP 7487380A JP S573800 A JPS573800 A JP S573800A
Authority
JP
Japan
Prior art keywords
single crystal
powder
cracks
litao
embedded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7487380A
Other languages
Japanese (ja)
Inventor
Tadao Komi
Katsuji Kawaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7487380A priority Critical patent/JPS573800A/en
Publication of JPS573800A publication Critical patent/JPS573800A/en
Pending legal-status Critical Current

Links

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To obtain prescribed parts in high yield without forming cracks, by heating a grown single crystal embedded in a powder of the same composition as that of the single crystal.
CONSTITUTION: A grown single crystal 11 of LiTaO3 is embedded in a powder 13 of the LiTaO3 filled in a ceramic container 12, and the container 12 is then placed in a heating furnace 14 and heated according to a prescribed temperature increasing curve. Thus, the single crystal 11 can be heated slowly and uniformly via the powder 13 without forming cracks on the surface thereof. If fine cracks are present at the edge thereof, the internal strain is relaxed without propagating and enlarging the cracks. The average particle diameter of the powder 13 is preferably 500μ or less, most preferably 300μ or less. According to the method, prescribed parts can be obtained in high yield by growing a piezoelectric single crystal, and processing the grown single crystal.
COPYRIGHT: (C)1982,JPO&Japio
JP7487380A 1980-06-05 1980-06-05 Heat-treating method of single crystal Pending JPS573800A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7487380A JPS573800A (en) 1980-06-05 1980-06-05 Heat-treating method of single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7487380A JPS573800A (en) 1980-06-05 1980-06-05 Heat-treating method of single crystal

Publications (1)

Publication Number Publication Date
JPS573800A true JPS573800A (en) 1982-01-09

Family

ID=13559884

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7487380A Pending JPS573800A (en) 1980-06-05 1980-06-05 Heat-treating method of single crystal

Country Status (1)

Country Link
JP (1) JPS573800A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63310800A (en) * 1987-06-10 1988-12-19 Fujitsu Ltd Formation of single domain of single crystal
WO2004079061A1 (en) * 2003-03-06 2004-09-16 Shin-Etsu Chemical Co., Ltd. Process for producing lithium tantalate crystal
WO2005038098A1 (en) * 2003-10-16 2005-04-28 Sumitomo Metal Mining Co., Ltd. Lithium tantalate substrate and method for producing same
WO2005038099A1 (en) * 2003-10-16 2005-04-28 Sumitomo Metal Mining Co., Ltd. Lithium tantalate substrate and method for producing same
WO2006051610A1 (en) * 2004-11-15 2006-05-18 Shin-Etsu Chemical Co., Ltd. Method for producing lithium tantalate crystal
US7374612B2 (en) 2003-09-26 2008-05-20 Shin-Etsu Chemical Co., Ltd. Method of producing single-polarized lithium tantalate crystal and single-polarized lithium tantalate crystal
JP2010064919A (en) * 2008-09-10 2010-03-25 Showa Denko Kk Method for annealing silicon carbide single crystal material, silicon carbide single crystal wafer, and silicon carbide semiconductor
JP2019202915A (en) * 2018-05-24 2019-11-28 住友金属鉱山株式会社 Heat treatment method for oxide single crystal

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63310800A (en) * 1987-06-10 1988-12-19 Fujitsu Ltd Formation of single domain of single crystal
WO2004079061A1 (en) * 2003-03-06 2004-09-16 Shin-Etsu Chemical Co., Ltd. Process for producing lithium tantalate crystal
US7323050B2 (en) 2003-03-06 2008-01-29 Shin-Etsu Chemical Co., Ltd. Method of producing lithium tantalate crystal
US7374612B2 (en) 2003-09-26 2008-05-20 Shin-Etsu Chemical Co., Ltd. Method of producing single-polarized lithium tantalate crystal and single-polarized lithium tantalate crystal
WO2005038098A1 (en) * 2003-10-16 2005-04-28 Sumitomo Metal Mining Co., Ltd. Lithium tantalate substrate and method for producing same
WO2005038099A1 (en) * 2003-10-16 2005-04-28 Sumitomo Metal Mining Co., Ltd. Lithium tantalate substrate and method for producing same
US7442250B2 (en) 2003-10-16 2008-10-28 Sumitomo Metal Mining Co., Ltd. Lithium tantalate substrate and method for producing same
US7713511B2 (en) 2003-10-16 2010-05-11 Sumitomo Metal Mining Co., Ltd. Lithium tantalate substrate and process for its manufacture
WO2006051610A1 (en) * 2004-11-15 2006-05-18 Shin-Etsu Chemical Co., Ltd. Method for producing lithium tantalate crystal
JP2010064919A (en) * 2008-09-10 2010-03-25 Showa Denko Kk Method for annealing silicon carbide single crystal material, silicon carbide single crystal wafer, and silicon carbide semiconductor
JP2019202915A (en) * 2018-05-24 2019-11-28 住友金属鉱山株式会社 Heat treatment method for oxide single crystal

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