JPS5433899A - Process for producing silicon carbide consisting essentially of beta type crystals - Google Patents
Process for producing silicon carbide consisting essentially of beta type crystalsInfo
- Publication number
- JPS5433899A JPS5433899A JP10034877A JP10034877A JPS5433899A JP S5433899 A JPS5433899 A JP S5433899A JP 10034877 A JP10034877 A JP 10034877A JP 10034877 A JP10034877 A JP 10034877A JP S5433899 A JPS5433899 A JP S5433899A
- Authority
- JP
- Japan
- Prior art keywords
- type crystals
- beta type
- silicon carbide
- consisting essentially
- producing silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To provide the subject process comprising carrying out operations by maintaining in a specific range the height of the filling layer in the preheating zone of a blending raw material which specifies the compositions and bulk specific gravities of SiO2 and C, thereby producing continuously SiC essentially consisting of beta type crystals in low power original unit at a high yield.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52100348A JPS5834405B2 (en) | 1977-08-22 | 1977-08-22 | Method for producing silicon carbide mainly composed of β-type crystals |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52100348A JPS5834405B2 (en) | 1977-08-22 | 1977-08-22 | Method for producing silicon carbide mainly composed of β-type crystals |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5433899A true JPS5433899A (en) | 1979-03-12 |
JPS5834405B2 JPS5834405B2 (en) | 1983-07-26 |
Family
ID=14271592
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP52100348A Expired JPS5834405B2 (en) | 1977-08-22 | 1977-08-22 | Method for producing silicon carbide mainly composed of β-type crystals |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5834405B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4818511A (en) * | 1986-03-08 | 1989-04-04 | Nihon Cement Co., Ltd. | Process and apparatus for producing non-oxide compounds |
JP2012046401A (en) * | 2010-08-30 | 2012-03-08 | Sumitomo Osaka Cement Co Ltd | Method for manufacturing silicon carbide precursor, and method for manufacturing silicon carbide powder |
WO2013073534A1 (en) * | 2011-11-17 | 2013-05-23 | イビデン株式会社 | Method for producing silicon carbide single crystals |
-
1977
- 1977-08-22 JP JP52100348A patent/JPS5834405B2/en not_active Expired
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4818511A (en) * | 1986-03-08 | 1989-04-04 | Nihon Cement Co., Ltd. | Process and apparatus for producing non-oxide compounds |
JP2012046401A (en) * | 2010-08-30 | 2012-03-08 | Sumitomo Osaka Cement Co Ltd | Method for manufacturing silicon carbide precursor, and method for manufacturing silicon carbide powder |
WO2013073534A1 (en) * | 2011-11-17 | 2013-05-23 | イビデン株式会社 | Method for producing silicon carbide single crystals |
JPWO2013073534A1 (en) * | 2011-11-17 | 2015-04-02 | イビデン株式会社 | Method for producing silicon carbide single crystal |
Also Published As
Publication number | Publication date |
---|---|
JPS5834405B2 (en) | 1983-07-26 |
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