JPS5433899A - Process for producing silicon carbide consisting essentially of beta type crystals - Google Patents

Process for producing silicon carbide consisting essentially of beta type crystals

Info

Publication number
JPS5433899A
JPS5433899A JP10034877A JP10034877A JPS5433899A JP S5433899 A JPS5433899 A JP S5433899A JP 10034877 A JP10034877 A JP 10034877A JP 10034877 A JP10034877 A JP 10034877A JP S5433899 A JPS5433899 A JP S5433899A
Authority
JP
Japan
Prior art keywords
type crystals
beta type
silicon carbide
consisting essentially
producing silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10034877A
Other languages
Japanese (ja)
Other versions
JPS5834405B2 (en
Inventor
Akira Enomoto
Michihiro Yoshioka
Takao Yokoyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ibiden Co Ltd
Ibigawa Electric Industry Co Ltd
Original Assignee
Ibiden Co Ltd
Ibigawa Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibiden Co Ltd, Ibigawa Electric Industry Co Ltd filed Critical Ibiden Co Ltd
Priority to JP52100348A priority Critical patent/JPS5834405B2/en
Publication of JPS5433899A publication Critical patent/JPS5433899A/en
Publication of JPS5834405B2 publication Critical patent/JPS5834405B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To provide the subject process comprising carrying out operations by maintaining in a specific range the height of the filling layer in the preheating zone of a blending raw material which specifies the compositions and bulk specific gravities of SiO2 and C, thereby producing continuously SiC essentially consisting of beta type crystals in low power original unit at a high yield.
COPYRIGHT: (C)1979,JPO&Japio
JP52100348A 1977-08-22 1977-08-22 Method for producing silicon carbide mainly composed of β-type crystals Expired JPS5834405B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52100348A JPS5834405B2 (en) 1977-08-22 1977-08-22 Method for producing silicon carbide mainly composed of β-type crystals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52100348A JPS5834405B2 (en) 1977-08-22 1977-08-22 Method for producing silicon carbide mainly composed of β-type crystals

Publications (2)

Publication Number Publication Date
JPS5433899A true JPS5433899A (en) 1979-03-12
JPS5834405B2 JPS5834405B2 (en) 1983-07-26

Family

ID=14271592

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52100348A Expired JPS5834405B2 (en) 1977-08-22 1977-08-22 Method for producing silicon carbide mainly composed of β-type crystals

Country Status (1)

Country Link
JP (1) JPS5834405B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4818511A (en) * 1986-03-08 1989-04-04 Nihon Cement Co., Ltd. Process and apparatus for producing non-oxide compounds
JP2012046401A (en) * 2010-08-30 2012-03-08 Sumitomo Osaka Cement Co Ltd Method for manufacturing silicon carbide precursor, and method for manufacturing silicon carbide powder
WO2013073534A1 (en) * 2011-11-17 2013-05-23 イビデン株式会社 Method for producing silicon carbide single crystals

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4818511A (en) * 1986-03-08 1989-04-04 Nihon Cement Co., Ltd. Process and apparatus for producing non-oxide compounds
JP2012046401A (en) * 2010-08-30 2012-03-08 Sumitomo Osaka Cement Co Ltd Method for manufacturing silicon carbide precursor, and method for manufacturing silicon carbide powder
WO2013073534A1 (en) * 2011-11-17 2013-05-23 イビデン株式会社 Method for producing silicon carbide single crystals
JPWO2013073534A1 (en) * 2011-11-17 2015-04-02 イビデン株式会社 Method for producing silicon carbide single crystal

Also Published As

Publication number Publication date
JPS5834405B2 (en) 1983-07-26

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