JPS53144888A - Producing apparatus for beltlike silicon crystal - Google Patents

Producing apparatus for beltlike silicon crystal

Info

Publication number
JPS53144888A
JPS53144888A JP5986477A JP5986477A JPS53144888A JP S53144888 A JPS53144888 A JP S53144888A JP 5986477 A JP5986477 A JP 5986477A JP 5986477 A JP5986477 A JP 5986477A JP S53144888 A JPS53144888 A JP S53144888A
Authority
JP
Japan
Prior art keywords
producing apparatus
silicon crystal
beltlike
dies
beltlike silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5986477A
Other languages
Japanese (ja)
Other versions
JPS609000B2 (en
Inventor
Hiroshi Ito
Naoaki Maki
Toshiro Matsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP52059864A priority Critical patent/JPS609000B2/en
Publication of JPS53144888A publication Critical patent/JPS53144888A/en
Publication of JPS609000B2 publication Critical patent/JPS609000B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To revent solidification or cut of crystals at the upper part of plural slotted dies which are placed in a crucible contg. molten liq. of Si. by placing each dies at a distance between their longitudinal walls larger than a specific length.
COPYRIGHT: (C)1978,JPO&Japio
JP52059864A 1977-05-25 1977-05-25 Band-shaped silicon crystal growth device Expired JPS609000B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52059864A JPS609000B2 (en) 1977-05-25 1977-05-25 Band-shaped silicon crystal growth device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52059864A JPS609000B2 (en) 1977-05-25 1977-05-25 Band-shaped silicon crystal growth device

Publications (2)

Publication Number Publication Date
JPS53144888A true JPS53144888A (en) 1978-12-16
JPS609000B2 JPS609000B2 (en) 1985-03-07

Family

ID=13125458

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52059864A Expired JPS609000B2 (en) 1977-05-25 1977-05-25 Band-shaped silicon crystal growth device

Country Status (1)

Country Link
JP (1) JPS609000B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016043176A1 (en) * 2014-09-19 2016-03-24 並木精密宝石株式会社 Plurality of sapphire single crystals and method of manufacturing same
JP2016060692A (en) * 2016-01-14 2016-04-25 並木精密宝石株式会社 Plurality of sapphire single crystals and method of manufacturing the same
WO2017038745A1 (en) * 2015-09-04 2017-03-09 並木精密宝石株式会社 Plurality of sapphire single crystals and production method for same
CN109576778A (en) * 2018-12-25 2019-04-05 内蒙古中环光伏材料有限公司 A method of reducing the impurity content that CZ method prepares monocrystalline

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6195569U (en) * 1984-11-28 1986-06-19

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4953176A (en) * 1972-07-10 1974-05-23

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4953176A (en) * 1972-07-10 1974-05-23

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016043176A1 (en) * 2014-09-19 2016-03-24 並木精密宝石株式会社 Plurality of sapphire single crystals and method of manufacturing same
JP5895280B1 (en) * 2014-09-19 2016-03-30 並木精密宝石株式会社 Method for producing a plurality of sapphire single crystals
WO2017038745A1 (en) * 2015-09-04 2017-03-09 並木精密宝石株式会社 Plurality of sapphire single crystals and production method for same
JP2016060692A (en) * 2016-01-14 2016-04-25 並木精密宝石株式会社 Plurality of sapphire single crystals and method of manufacturing the same
CN109576778A (en) * 2018-12-25 2019-04-05 内蒙古中环光伏材料有限公司 A method of reducing the impurity content that CZ method prepares monocrystalline

Also Published As

Publication number Publication date
JPS609000B2 (en) 1985-03-07

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