JP2019202915A - Heat treatment method for oxide single crystal - Google Patents

Heat treatment method for oxide single crystal Download PDF

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JP2019202915A
JP2019202915A JP2018099524A JP2018099524A JP2019202915A JP 2019202915 A JP2019202915 A JP 2019202915A JP 2018099524 A JP2018099524 A JP 2018099524A JP 2018099524 A JP2018099524 A JP 2018099524A JP 2019202915 A JP2019202915 A JP 2019202915A
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安宏 大保
Yasuhiro Oyasu
安宏 大保
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Sumitomo Metal Mining Co Ltd
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Abstract

To provide a method of heat-treating an oxide single crystal in which a ceramic-made container houses an oxide single crystal ingot 1 raised in a lifting method, and is placed on a flat furnace bottom 6 of a heating furnace.SOLUTION: A ceramic-made container consists of an inside container 3 which has a group of pellets 5, made of the same material with an oxide single crystal, spread over an inner bottom face, and houses an ingot 1 across the group of pellets 5 interposed, and an outside cylinder body 2 which has an inner diameter larger than the external diameter of the inside container and is arranged surrounding an outer peripheral surface of the ingot. While a plate-like spacer 4 is interposed between the flat furnace bottom 6 and the inside container and outside cylinder body mounted on the flat furnace bottom, heating air in a heating furnace is supplied to an exposed inside container outer bottom face, and heating air is supplied from the gap between the inside container and outside cylinder body into the outside cylinder body so as to perform a heat treatment for reducing thermal strain of the ingot.SELECTED DRAWING: Figure 1

Description

本発明は、チョクラルスキー法(以下、Cz法と略記する)等の引き上げ法により育成した酸化物単結晶インゴットをセラミック製容器に収容し、該セラミック製容器を加熱炉内の平坦状炉床台に載置した状態で酸化物単結晶インゴットを熱処理して酸化物単結晶インゴットの「熱歪み」を緩和する方法に係り、特に、処理する酸化物単結晶インゴットが大型化しても(すなわち、インゴットの直径が大きくなっても)熱処理の不均一やセラミック製容器の破損等が回避される酸化物単結晶の熱処理方法に関するものである。   The present invention accommodates an oxide single crystal ingot grown by a pulling method such as the Czochralski method (hereinafter abbreviated as Cz method) in a ceramic vessel, and the ceramic vessel is a flat hearth in a heating furnace. The present invention relates to a method for reducing the “thermal strain” of an oxide single crystal ingot by heat-treating the oxide single crystal ingot in a state where it is placed on a table, and in particular, even if the oxide single crystal ingot to be processed is enlarged (that is, The present invention relates to a method for heat treatment of an oxide single crystal that can prevent uneven heat treatment and breakage of a ceramic container even if the diameter of the ingot is increased.

タンタル酸リチウム(以下、LTと略記する)単結晶やニオブ酸リチウム(以下、LNと略記する)単結晶等の酸化物単結晶は一般的にCz法等の引き上げ法を用いて育成されている。Cz法は、坩堝内の原料融液に種結晶を接触させ、該種結晶を回転させながら引き上げることで種結晶と同一方位の単結晶を育成する方法である。Cz法では成長界面が固化することで結晶成長が進むため、先に固化した部分と成長界面との間には温度勾配が生じる。そして、温度勾配を生じることで、育成が完了した結晶には温度差に起因した「熱歪み」が導入される。   Oxide single crystals such as lithium tantalate (hereinafter abbreviated as LT) single crystal and lithium niobate (hereinafter abbreviated as LN) single crystal are generally grown using a pulling method such as the Cz method. . The Cz method is a method for growing a single crystal having the same orientation as the seed crystal by bringing the seed crystal into contact with the raw material melt in the crucible and pulling the seed crystal while rotating it. In the Cz method, crystal growth proceeds by solidifying the growth interface, and therefore a temperature gradient is generated between the previously solidified portion and the growth interface. Then, by generating a temperature gradient, “thermal strain” due to the temperature difference is introduced into the crystal after the growth is completed.

育成した結晶に上記「熱歪み」が導入されると、その後の加工工程でクラックを生じさせることから、Cz法で育成された酸化物単結晶については融点以下の温度でアニール処理(熱処理)を行い、上記「熱歪み」を緩和している。アニール処理は、結晶全体を均一な温度にすることが好ましく、特に、Cz法による単結晶育成では直径の変化が大きい結晶肩部と結晶直胴部の境界付近に大きな「熱歪み」が導入されているため、アニール処理において結晶肩部と結晶直胴部の温度差を可能な限り小さくすることが好ましい。   When the above-mentioned “thermal strain” is introduced into the grown crystal, cracks are generated in the subsequent processing steps. Therefore, the oxide single crystal grown by the Cz method is subjected to annealing treatment (heat treatment) at a temperature below the melting point. The above-mentioned “thermal distortion” is alleviated. The annealing treatment is preferably performed at a uniform temperature throughout the crystal. In particular, in the case of single crystal growth by the Cz method, large “thermal strain” is introduced near the boundary between the crystal shoulder and the crystal straight body where the change in diameter is large. Therefore, it is preferable to reduce the temperature difference between the crystal shoulder and the crystal straight body as much as possible in the annealing treatment.

LT(融点:約1650℃)やLN(融点:約1250℃)の単結晶は1000℃を越える温度でアニール処理を行うことから、一般的に抵抗加熱式のヒータを備えた電気炉が選択される。電気炉の発熱体はアニール温度に応じて二珪化モリブデンや炭化ケイ素が選択されるが、これ等の発熱体に限定されるものではない。   Since single crystals of LT (melting point: about 1650 ° C.) and LN (melting point: about 1250 ° C.) are annealed at temperatures exceeding 1000 ° C., an electric furnace equipped with a resistance heating type heater is generally selected. The The heating element of the electric furnace is selected from molybdenum disilicide and silicon carbide depending on the annealing temperature, but is not limited to these heating elements.

アニール処理では、結晶全体を均一な温度で長時間保持し、再び温度差が生じないように徐冷しながら室温まで戻すことで「熱歪み」を緩和し、その後の加工工程におけるクラックを防いでおり、高温下で温度を均一に保持することが必要となる。   In the annealing treatment, the entire crystal is kept at a uniform temperature for a long time, and is gradually cooled back to room temperature so as not to cause a temperature difference, thereby relieving "thermal distortion" and preventing cracks in subsequent processing steps. Therefore, it is necessary to keep the temperature uniform at high temperatures.

ところで、結晶肩部と結晶直胴部を有する上記酸化物単結晶インゴットのアニール処理(熱処理)は、セラミック製容器に上記インゴットを収容し、かつ、インゴット全体を容器で覆った状態にして熱処理がなされるが、酸化物単結晶インゴットとセラミック製容器が接触した部分のインゴットにクラックを生じることがあった。この原因は、酸化物単結晶インゴットにおける接触部位の熱的不均一および酸化物単結晶インゴットの自重による応力の不均一に起因すると考えられている。   By the way, annealing treatment (heat treatment) of the oxide single crystal ingot having a crystal shoulder and a crystal straight body portion is carried out by accommodating the ingot in a ceramic container and covering the entire ingot with the container. However, cracks may occur in the ingot where the oxide single crystal ingot and the ceramic container are in contact with each other. This is believed to be due to thermal nonuniformity at the contact site in the oxide single crystal ingot and nonuniform stress due to the weight of the oxide single crystal ingot.

そこで、特許文献1において、図5に示すように上部が開放されかつ酸化物単結晶インゴットと同一材料で構成された塊径2mm以上10mm未満の小塊5群が敷き詰められた内底面を有する筒形の下側部材9と、該下側部材9の内底面に小塊5群を介し収容された酸化物単結晶インゴット1全体が覆われる内壁面と天壁面を有しかつ下側部材9に嵌合される筒形の上側部材8とでセラミック製容器を構成し、酸化物単結晶インゴットが収容されたセラミック製容器を電気炉(図示せず)の平坦状炉床台6に直接載置した状態で熱処理して酸化物単結晶インゴットの「熱歪み」を緩和させる方法が提案され、また、図6に示すように上部が開放されかつ酸化物単結晶インゴットと同一材料で構成された塊径2mm以上10mm未満の小塊5群が敷き詰められた内底面を有する筒形の下側部材12と、中側部材11および上側部材10を嵌合させてセラミック製容器を構成し、図5と同様、酸化物単結晶インゴットの「熱歪み」を緩和させる方法が提案されている。   Therefore, in Patent Document 1, as shown in FIG. 5, a cylinder having an inner bottom surface in which an upper part is opened and a group of small lumps having a diameter of 2 mm or more and less than 10 mm and made of the same material as an oxide single crystal ingot is spread. A lower member 9 having a shape, and an inner wall surface and a ceiling wall surface on which the entire oxide single crystal ingot 1 accommodated on the inner bottom surface of the lower member 9 via a small group 5 is covered. A ceramic container is constituted by the cylindrical upper member 8 to be fitted, and the ceramic container containing the oxide single crystal ingot is directly placed on the flat hearth base 6 of an electric furnace (not shown). In this state, a method of reducing the “thermal strain” of the oxide single crystal ingot by heat treatment is proposed, and as shown in FIG. 6, a lump is formed of the same material as that of the oxide single crystal ingot with the top opened. 5 groups of small bobs with a diameter of 2 mm or more and less than 10 mm A cylindrical lower member 12 having a spread inner bottom surface, a middle member 11 and an upper member 10 are fitted together to form a ceramic container. Similar to FIG. 5, the “thermal strain of an oxide single crystal ingot is formed. ”Has been proposed.

そして、特許文献1で提案された酸化物単結晶の熱処理方法によれば、上記小塊5群は酸化物単結晶で構成される従来の粉末に較べて塊径が著しく大きいため、高温条件下におけるリチウム(Li)成分(LTやLN単結晶を構成する成分)の揮散が起こり難くかつ小塊5の表面積も小さいことから、セラミック製容器と小塊5が直接接触しても容器と小塊5間の反応が起こり難く、かつ、小塊5の塊径が10mm未満であるためセラミック製容器内に収容した酸化物単結晶インゴットが熱処理中に倒れることもない。このため、安価なセラミック製容器内に酸化物単結晶インゴットを安定して収容でき、かつ、酸化物単結晶インゴット全体をセラミック製容器で覆うことによりインゴットの加熱ムラやセラミック製容器の劣化を生じさせることなく酸化物単結晶インゴットの「熱歪み」が緩和される方法であった。   And according to the heat processing method of the oxide single crystal proposed by patent document 1, since the said lump 5 group has a remarkably large lump diameter compared with the conventional powder comprised with an oxide single crystal, on high temperature conditions Since the volatilization of the lithium (Li) component (the component constituting the LT or LN single crystal) does not easily occur and the surface area of the nodule 5 is small, the container and the nodule even when the ceramic vessel and the nodule 5 are in direct contact with each other The reaction between 5 is difficult to occur, and since the lump 5 has a lump diameter of less than 10 mm, the oxide single crystal ingot accommodated in the ceramic container does not fall during the heat treatment. For this reason, the oxide single crystal ingot can be stably accommodated in an inexpensive ceramic container, and the entire oxide single crystal ingot is covered with the ceramic container, resulting in uneven heating of the ingot and deterioration of the ceramic container. This is a method in which the “thermal distortion” of the oxide single crystal ingot is alleviated without the use of an oxide.

ところで、近年のスマートホン等の普及に伴い、移動体通信機器用の表面弾性波フィルター(以下、SAWフィルターと略記する)市場は拡大を続けており、SAWフィルターの材料となる上記LTやLN等の単結晶基板の需要も伸びている。そして、SAWフィルター製造プロセスのコストダウンを図るため、LTやLN等の酸化物単結晶基板サイズも、従来のφ3インチから、φ4インチ、φ6インチへと大面積化が進み、育成される酸化物単結晶インゴットが大型化(すなわち、インゴット直径が大きくなっている)している。そして、従来の酸化物単結晶サイズでは問題にならなかったが、育成される酸化物単結晶インゴットの大型化に伴い、上記インゴットに対する熱処理の不均一やセラミック製容器の破損(容器底面のクラック)等の問題が生じている。   By the way, with the recent spread of smart phones and the like, the market for surface acoustic wave filters (hereinafter abbreviated as SAW filters) for mobile communication devices continues to expand, and the above-mentioned LT, LN, etc., which are materials for SAW filters The demand for single crystal substrates is growing. In order to reduce the cost of the SAW filter manufacturing process, the oxide single crystal substrate size of LT, LN, etc. has been increased from the conventional φ3 inch to φ4 inch, φ6 inch, and the grown oxide. Single crystal ingots have become larger (that is, the ingot diameter has increased). The conventional oxide single crystal size was not a problem, but with the increase in the size of the grown oxide single crystal ingot, the heat treatment on the ingot was uneven and the ceramic container was damaged (crack on the bottom of the container). Etc. are occurring.

特開2017―193453号公報JP 2017-193453 A

酸化物単結晶のアニール処理(熱処理)において、育成される酸化物単結晶が大型化する(すなわち単結晶の直径が大きくなる)と容器底面にクラックが発生する問題があり、この原因は、大型化した酸化物単結晶に合わせてセラミック製容器も大きくなったため、セラミック製容器の底面における中心部と外周部に温度差が生じるためと考えられる。   In the annealing treatment (heat treatment) of the oxide single crystal, when the grown oxide single crystal is enlarged (that is, the diameter of the single crystal is increased), there is a problem that a crack is generated on the bottom of the container. This is probably because the ceramic container has become larger in accordance with the oxide single crystal thus formed, and therefore a temperature difference occurs between the center and the outer periphery of the bottom surface of the ceramic container.

そして、容器底面における中心部と外周部に温度差が生じ始めると、酸化物単結晶への熱処理が不均一になるため酸化物単結晶にクラックが発生し易くなり、容器底面にもクラックが発生して酸化物単結晶の保持が困難になる。   And if a temperature difference begins to occur between the center and the outer periphery of the bottom surface of the container, the heat treatment to the oxide single crystal becomes non-uniform and cracks are likely to occur in the oxide single crystal, and cracks also occur in the bottom surface of the container. Therefore, it becomes difficult to hold the oxide single crystal.

本発明はこのような問題点に着目してなされたもので、その課題とするところは、処理する酸化物単結晶(酸化物単結晶インゴット)が大型化しても熱処理の不均一やセラミック製容器の破損等が回避される酸化物単結晶の熱処理方法を提供することにある。   The present invention has been made paying attention to such problems, and the problem is that even if the oxide single crystal (oxide single crystal ingot) to be processed is enlarged, the heat treatment is not uniform and the ceramic container is made. It is an object of the present invention to provide a method for heat treatment of an oxide single crystal in which damage of the oxide is avoided.

上記課題を解決するため本発明者が鋭意研究を継続した結果、特許文献1で採用されているセラミック製容器の嵌合方法を変更し、かつ、加熱炉内の平坦状炉床台にセラミック製容器を直接載置させない方法に変更したところ、処理する酸化物単結晶(酸化物単結晶インゴット)が大型化しても熱処理の不均一やセラミック製容器の破損等が回避できることを発見するに至った。本発明はこのような技術的発見に基づき完成されたものである。   As a result of continual research by the inventor in order to solve the above problems, the method for fitting the ceramic container adopted in Patent Document 1 is changed, and the flat hearth in the heating furnace is made of ceramic. When the method was changed so that the container was not placed directly, it was discovered that even if the oxide single crystal to be processed (oxide single crystal ingot) was enlarged, non-uniform heat treatment and damage to the ceramic container could be avoided. . The present invention has been completed based on such technical findings.

すなわち、本発明に係る第1の発明は、
引き上げ法により育成された酸化物単結晶インゴットをセラミック製の容器に収容し、加熱炉内に設置された平坦状炉床台に上記容器を載置して容器内の酸化物単結晶インゴットを熱処理する酸化物単結晶の熱処理方法において、
上記酸化物単結晶インゴットと同一材料で構成された塊径2mm以上10mm未満の小塊群が内底面に敷き詰められかつ該小塊群を介し酸化物単結晶インゴットが収容される内側容器と、該内側容器の外径より大きい内径を有しかつ内側容器に収容された酸化物単結晶インゴットの外周面を囲むように配置される外側筒体とで、上記セラミック製の容器を構成し、かつ、
上記平坦状炉床台と、該炉床台に載置される内側容器並びに外側筒体との間に板状スペーサを介在させて、露出する内側容器外底面に加熱炉内の加熱された空気を供給すると共に、上記内側容器と外側筒体との隙間から加熱された空気を外側筒体内に供給して酸化物単結晶インゴットを熱処理することを特徴とするものである。
That is, the first invention according to the present invention is:
The oxide single crystal ingot grown by the pulling method is accommodated in a ceramic vessel, and the vessel is placed on a flat hearth installed in a heating furnace to heat-treat the oxide single crystal ingot in the vessel. In the heat treatment method of the oxide single crystal to be
An inner container in which a small lump group having a lump diameter of 2 mm or more and less than 10 mm made of the same material as the oxide single crystal ingot is spread on the inner bottom surface and the oxide single crystal ingot is accommodated through the small lump group; An outer cylindrical body having an inner diameter larger than the outer diameter of the inner container and disposed so as to surround the outer peripheral surface of the oxide single crystal ingot accommodated in the inner container, and constituting the ceramic container; and
A plate-like spacer is interposed between the flat hearth base and the inner vessel and outer cylinder mounted on the hearth base, and the heated air in the heating furnace is exposed on the outer bottom surface of the inner vessel. And heating the oxide single crystal ingot by supplying air heated from the gap between the inner container and the outer cylinder into the outer cylinder.

また、本発明に係る第2の発明は、
第1の発明に記載の酸化物単結晶の熱処理方法において、
板状スペーサが上記容器と同一のセラミック材料で構成されることを特徴とし、
第3の発明は、
第1の発明または第2の発明に記載の酸化物単結晶の熱処理方法において、
上記板状スペーサと接する内側容器外底面の面積が該外底面全面積の10%以上50%以下であることを特徴とする。
Further, the second invention according to the present invention is:
In the heat treatment method for an oxide single crystal according to the first invention,
The plate-like spacer is composed of the same ceramic material as the container,
The third invention is
In the heat treatment method for an oxide single crystal according to the first invention or the second invention,
The area of the outer bottom surface of the inner container in contact with the plate-like spacer is 10% or more and 50% or less of the total area of the outer bottom surface.

次に、本発明に係る第4の発明は、
第1の発明〜第3の発明のいずれかに記載の酸化物単結晶の熱処理方法において、
露出する上記内側容器外底面の中央部に加熱された空気を給排する2箇所以上の通気口が対称的に形成されるように複数の板材で上記板状スペーサを構成することを特徴とし、
第5の発明は、
第1の発明〜第4の発明のいずれかに記載の酸化物単結晶の熱処理方法において、
上記板状スペーサの厚さが10mm以上に設定されていることを特徴とし、
また、第6の発明は、
第1の発明〜第5の発明のいずれかに記載の酸化物単結晶の熱処理方法において、
上記酸化物単結晶がタンタル酸リチウム単結晶またはニオブ酸リチウム単結晶で構成されることを特徴とするものである。
Next, a fourth invention according to the present invention is as follows.
In the heat treatment method for an oxide single crystal according to any one of the first to third inventions,
The plate spacer is composed of a plurality of plate materials so that two or more vent holes for supplying and discharging heated air are symmetrically formed in the central portion of the exposed outer bottom surface of the inner container,
The fifth invention is:
In the heat treatment method for an oxide single crystal according to any one of the first to fourth inventions,
The thickness of the plate spacer is set to 10 mm or more,
In addition, the sixth invention,
In the heat treatment method for an oxide single crystal according to any one of the first to fifth inventions,
The oxide single crystal is composed of a lithium tantalate single crystal or a lithium niobate single crystal.

引き上げ法で育成された酸化物単結晶インゴットをセラミック製容器に収容し、該セラミック製容器を加熱炉内の平坦状炉床台に載置して酸化物単結晶インゴットを熱処理する本発明に係る熱処理方法は、
酸化物単結晶インゴットと同一材料で構成された塊径2mm以上10mm未満の小塊群が内底面に敷き詰められかつ該小塊群を介し酸化物単結晶インゴットが収容される内側容器と、該内側容器の外径より大きい内径を有しかつ内側容器に収容された酸化物単結晶インゴットの外周面を囲むように配置される外側筒体とで上記セラミック製容器を構成し、かつ、上記平坦状炉床台と、該炉床台に載置される内側容器並びに外側筒体との間に板状スペーサを介在させて、露出する内側容器外底面に加熱炉内の加熱された空気を供給すると共に、上記内側容器と外側筒体との隙間から加熱された空気を外側筒体内に供給して酸化物単結晶インゴットを熱処理することを特徴としている。
According to the present invention, an oxide single crystal ingot grown by a pulling method is accommodated in a ceramic vessel, and the ceramic vessel is placed on a flat hearth in a heating furnace to heat-treat the oxide single crystal ingot. The heat treatment method is
An inner container in which small clusters having a diameter of 2 mm or more and less than 10 mm made of the same material as the oxide single crystal ingot are spread on the inner bottom surface and the oxide single crystal ingot is accommodated through the small clusters; The ceramic container is constituted by an outer cylindrical body having an inner diameter larger than the outer diameter of the container and disposed so as to surround the outer peripheral surface of the oxide single crystal ingot accommodated in the inner container, and the flat shape A plate-like spacer is interposed between the hearth bed and the inner vessel and outer cylinder mounted on the hearth bed to supply the heated air in the heating furnace to the exposed inner vessel outer bottom surface. At the same time, the oxide single crystal ingot is heat-treated by supplying air heated from the gap between the inner container and the outer cylinder into the outer cylinder.

そして、本発明に係る熱処理方法によれば、露出する内側容器外底面に加熱炉内の加熱空気が供給されるため、内側容器外底面の中心部と周辺部を均等に加熱することが可能となり、かつ、上記内側容器と外側筒体との隙間から加熱炉内の加熱空気が外側筒体内に供給されるため、内側容器と外側筒体とで構成されるセラミック製容器内に収容された酸化物単結晶インゴットを均一に熱処理することが可能となる。   According to the heat treatment method of the present invention, since the heated air in the heating furnace is supplied to the exposed inner container outer bottom surface, it becomes possible to uniformly heat the central portion and the peripheral portion of the inner container outer bottom surface. And since the heated air in the heating furnace is supplied into the outer cylinder through the gap between the inner container and the outer cylinder, the oxidation accommodated in the ceramic container constituted by the inner container and the outer cylinder It becomes possible to heat-treat a single crystal ingot uniformly.

本発明の実施例1に係る酸化物単結晶の熱処理方法を示す説明図。Explanatory drawing which shows the heat processing method of the oxide single crystal which concerns on Example 1 of this invention. 本発明の実施例2に係る酸化物単結晶の熱処理方法を示す説明図。Explanatory drawing which shows the heat processing method of the oxide single crystal which concerns on Example 2 of this invention. 4枚の円弧状板材で構成される板状スペーサと該板状スペーサを介在させた状態で平坦状炉床台に載置される内側容器と外側筒体で構成される実施例1に係るセラミック製容器の底面図。A ceramic according to the first embodiment including a plate-like spacer composed of four arc-shaped plate members, an inner container placed on a flat hearth with the plate-like spacer interposed, and an outer cylinder. The bottom view of a container made. 平面C文字形状を有する1枚のセラミック製板材で構成される板状スペーサと該板状スペーサを介在させた状態で平坦状炉床台に載置される内側容器と外側筒体で構成される実施例5に係るセラミック製容器の底面図。It is composed of a plate-like spacer composed of a single ceramic plate having a planar C-shape, an inner container and an outer cylinder placed on a flat hearth with the plate-like spacer interposed. 6 is a bottom view of a ceramic container according to Embodiment 5. FIG. 特許文献1の下側部材と上側部材とで構成されるセラミック製容器を用いた酸化物単結晶の熱処理方法を示す説明図。Explanatory drawing which shows the heat processing method of the oxide single crystal using the ceramic container comprised by the lower side member and upper side member of patent document 1. FIG. 特許文献1の下側部材と中側部材および上側部材とで構成されるセラミック製容器を用いた酸化物単結晶の熱処理方法を示す説明図。Explanatory drawing which shows the heat processing method of the oxide single crystal using the ceramic container comprised by the lower side member of patent document 1, an inner side member, and an upper side member.

以下、本発明の実施の形態について詳細に説明する。   Hereinafter, embodiments of the present invention will be described in detail.

(1)本発明に係る酸化物単結晶の熱処理方法
本発明に係る酸化物単結晶の熱処理方法は、上述したように引き上げ法により育成された酸化物単結晶インゴットをセラミック製の容器に収容し、加熱炉内に設置された平坦状炉床台に上記容器を載置して容器内の酸化物単結晶インゴットを熱処理する酸化物単結晶の熱処理方法において、上記酸化物単結晶インゴットと同一材料で構成された塊径2mm以上10mm未満の小塊群が内底面に敷き詰められかつ該小塊群を介し酸化物単結晶インゴットが収容される内側容器と、該内側容器の外径より大きい内径を有しかつ内側容器に収容された酸化物単結晶インゴットの外周面を囲むように配置される外側筒体とで上記セラミック製の容器を構成し、かつ、上記平坦状炉床台と、該炉床台に載置される内側容器並びに外側筒体との間に板状スペーサを介在させて、露出する内側容器外底面に加熱炉内の加熱された空気を供給すると共に、上記内側容器と外側筒体との隙間から加熱された空気を外側筒体内に供給して酸化物単結晶インゴットを熱処理することを特徴とするものである。
(1) Oxide single crystal heat treatment method according to the present invention The oxide single crystal heat treatment method according to the present invention accommodates an oxide single crystal ingot grown by a pulling method as described above in a ceramic container. The same material as the oxide single crystal ingot, in the oxide single crystal heat treatment method, wherein the vessel is placed on a flat hearth installed in a heating furnace and the oxide single crystal ingot in the vessel is heat treated An inner container in which a group of small blocks having a diameter of 2 mm or more and less than 10 mm, which is composed of 2 and 10 mm, is laid down on the inner bottom surface and an oxide single crystal ingot is accommodated through the small group, and an inner diameter larger than the outer diameter of the inner container And the outer cylindrical body disposed so as to surround the outer peripheral surface of the oxide single crystal ingot accommodated in the inner container, and the ceramic container is configured, and the flat hearth base, the furnace Place on the floor A plate-like spacer is interposed between the inner container and the outer cylinder to supply heated air in the heating furnace to the exposed outer bottom surface of the inner container, and the gap between the inner container and the outer cylinder The air heated from above is supplied into the outer cylinder to heat-treat the oxide single crystal ingot.

(2)セラミック製容器
内側容器と外側筒体とで構成されるセラミック製容器の材料は特に限定されるものではなく、アニール温度や形状に応じて任意に選択することができる。例えば、アルミナ(酸化アルミニウム)やジルコニア(酸化ジルコニウム)、および、マグネシア、ムライト、炭化ケイ素等から選択された1種類以上の材料を用いることができる。
(2) Ceramic container The material of the ceramic container composed of the inner container and the outer cylinder is not particularly limited, and can be arbitrarily selected according to the annealing temperature and shape. For example, one or more materials selected from alumina (aluminum oxide), zirconia (zirconium oxide), magnesia, mullite, silicon carbide, and the like can be used.

内側容器と外側筒体とで構成されるセラミック製容器の形状は、酸化物単結晶インゴットの直径Dに対して、直径若しくは内接円が1.2D〜2.0Dとなるような円形や多角形とすることにより、電気炉への充填率を損なうこと無く、セラミック製容器と酸化物単結晶インゴットが直接接することを防ぐことができる。また、酸化物単結晶インゴットの全長Hに対して外側筒体の高さを1.1H〜1.5Hとすることにより、内側容器に収容された酸化物単結晶インゴットの外周面が外側筒体で囲まれた状態となるため酸化物単結晶インゴットの加熱ムラを防ぐことができる。   The shape of the ceramic container composed of the inner container and the outer cylindrical body is a circular shape or a large number such that the diameter or inscribed circle is 1.2D to 2.0D with respect to the diameter D of the oxide single crystal ingot. By making it square, it is possible to prevent the ceramic container and the oxide single crystal ingot from coming into direct contact without impairing the filling rate of the electric furnace. Further, by setting the height of the outer cylinder to 1.1H to 1.5H with respect to the total length H of the oxide single crystal ingot, the outer peripheral surface of the oxide single crystal ingot accommodated in the inner container is the outer cylinder. Therefore, uneven heating of the oxide single crystal ingot can be prevented.

尚、アニール処理(熱処理)の際、熱処理用加熱炉の発熱体からの熱線が、直接、酸化物単結晶インゴットに照射されないようにするため、内側容器に収容された酸化物単結晶インゴットの外周面が上記外側筒体で囲まれた状態にすることを要する。   In the annealing process (heat treatment), the outer periphery of the oxide single crystal ingot accommodated in the inner container is not to be directly irradiated with the heat rays from the heating element of the heating furnace for heat treatment. It is necessary to make the surface surrounded by the outer cylinder.

また、上記内側容器の外径より外側筒体の内径が大きいことを要する。内側容器と外側筒体との隙間から熱処理用加熱炉内の加熱された空気を上記外側筒体内に供給して酸化物単結晶インゴットの熱処理を行うためである。   Moreover, it is required that the inner diameter of the outer cylinder is larger than the outer diameter of the inner container. This is because the heated air in the heat treatment furnace is supplied into the outer cylinder through the gap between the inner container and the outer cylinder to heat-treat the oxide single crystal ingot.

(3)板状スペーサ
熱処理用加熱炉内の平坦状炉床台と、該炉床台に載置される内側容器並びに外側筒体との間に介在させる板状スペーサの材料は特に限定されるものではなく、アニール温度や形状に応じて任意に選択することができる。例えば、アルミナ(酸化アルミニウム)やジルコニア(酸化ジルコニウム)、および、マグネシア、ムライト、炭化ケイ素等から選択された1種類以上の材料を用いることができるが、上記セラミック製容器と同一素材がより好ましい。
(3) Plate-shaped spacer The material of the plate-shaped spacer interposed between the flat hearth base in the heating furnace for heat treatment and the inner vessel and the outer cylindrical body placed on the hearth base is particularly limited. It can be arbitrarily selected according to the annealing temperature and shape. For example, one or more materials selected from alumina (aluminum oxide), zirconia (zirconium oxide), magnesia, mullite, silicon carbide and the like can be used, but the same material as the ceramic container is more preferable.

また、板状スペーサを構成する板材の形状は特に限定されるものではなく、使用状況に応じて形状を適宜選択することができる。例えば、正方形、長方形、丸形、扇形等から形状を選択できる。   Moreover, the shape of the board | plate material which comprises a plate-shaped spacer is not specifically limited, A shape can be suitably selected according to a use condition. For example, the shape can be selected from a square, a rectangle, a circle, a sector, and the like.

尚、板状スペーサと接する内側容器外底面の面積が大きい場合、露出する内側容器外底面の面積が小さくなるため、加熱空気による内側容器外底面の加熱効果が低下する。このため、板状スペーサと接する内側容器外底面の面積は、外底面全面積の10%以上50%以下であることが好ましい。   In addition, when the area of the inner container outer bottom face in contact with the plate-like spacer is large, the area of the exposed inner container outer bottom face is reduced, so that the heating effect of the inner container outer bottom face by the heated air is reduced. For this reason, it is preferable that the area of the inner container outer bottom surface in contact with the plate spacer is 10% or more and 50% or less of the entire outer bottom surface area.

また、露出する上記内側容器外底面の中央部へ、加熱炉内の加熱空気を給排する通気口(空隙)の数については、加熱空気の給排が効率的になされるように2箇所以上が好ましく、より好ましくは2箇所以上の通気口が上下左右対称に形成されるとよい。   In addition, regarding the number of vents (voids) for supplying and discharging heated air in the heating furnace to the exposed central portion of the outer bottom surface of the inner container, two or more are provided so that heating air can be supplied and discharged efficiently. It is preferable that two or more vent holes are formed symmetrically in the vertical and horizontal directions.

また、板状スペーサの厚さについては、酸化物単結晶インゴットが収容された内側容器の荷重に対し十分な耐性を有するように10mm以上とすることが好ましく、かつ、板状スペーサが複数の板材で構成される場合には各板材の厚さを同一にすることが望ましい。   The thickness of the plate spacer is preferably 10 mm or more so that it has sufficient resistance to the load of the inner container in which the oxide single crystal ingot is accommodated, and the plate spacer has a plurality of plate materials. It is desirable that the thickness of each plate material be the same.

(4)内側容器内底面に敷き詰める小塊群
上記酸化物単結晶インゴットと同一材料で構成される小塊は、LT(LiTaO3)やLN(LiNbO3)の単結晶を砕いて製造される塊径が2mm以上10mm未満である酸化物単結晶の塊を意味している。
(4) Small lumps grouped on the bottom surface of the inner container The small lumps made of the same material as the oxide single crystal ingot are lumps produced by crushing single crystals of LT (LiTaO 3 ) and LN (LiNbO 3 ). It means a lump of oxide single crystal having a diameter of 2 mm or more and less than 10 mm.

塊径が2mm以上10mm未満である酸化物単結晶の小塊は、酸化物単結晶で構成される従来の粉末に較べて塊径が著しく大きいため、高温条件下におけるリチウム(Li)成分(LTやLN単結晶を構成する成分)の揮散が起こり難くかつ小塊の表面積も小さいことから、セラミック製容器と小塊が直接接触しても容器と小塊間の反応が起こり難く(すなわち、セラミック製容器との反応性に乏しいことから容器の化学的劣化が抑制される)、かつ、小塊の塊径が10mm未満であるため内側容器内に収容した酸化物単結晶インゴットが熱処理中に倒れることもない。   A small lump of an oxide single crystal having a lump diameter of 2 mm or more and less than 10 mm has a remarkably large lump diameter as compared with a conventional powder composed of an oxide single crystal. Therefore, a lithium (Li) component (LT) And components of LN single crystals are less likely to volatilize and the surface area of the small lump is small, so that the reaction between the container and the small lump hardly occurs even if the ceramic container and the small lump are in direct contact (that is, ceramic). The chemical degradation of the container is suppressed because of its poor reactivity with the container, and since the small lump diameter is less than 10 mm, the oxide single crystal ingot accommodated in the inner container falls during the heat treatment. There is nothing.

上記塊径が2mm未満の場合、小塊の表面積が増大して内側容器との反応性が増大してしまう。また、小塊の塊径が10mm以上の場合、酸化物単結晶インゴットの載置が不安定となり、熱処理中に酸化物単結晶インゴットが倒れてしまってクラック不良の原因となる。   When the lump diameter is less than 2 mm, the surface area of the small lump increases and the reactivity with the inner container increases. Moreover, when the lump diameter is 10 mm or more, the placement of the oxide single crystal ingot becomes unstable, and the oxide single crystal ingot falls down during the heat treatment, causing crack failure.

(5)酸化物単結晶
酸化物単結晶の熱処理方法を前提とした酸化物単結晶であり、タンタル酸リチウム(LT:LiTaO3)およびニオブ酸リチウム(LN:LiNbO3)が挙げられる。
(5) Oxide single crystal An oxide single crystal based on a heat treatment method for an oxide single crystal, and includes lithium tantalate (LT: LiTaO 3 ) and lithium niobate (LN: LiNbO 3 ).

以下、本発明の実施例について比較例を挙げて具体的に説明するが、本発明に係る技術的構成がこれ等実施例の構成に限定されるものではない。   Hereinafter, examples of the present invention will be specifically described with reference to comparative examples. However, the technical configuration according to the present invention is not limited to the configurations of these examples.

[実施例1]
本実施例で使用されるセラミック製容器は、図1に示すように、上部が開放されかつ小塊5群が敷き詰められる内底面を有する外径φ260mm、高さ45mm、容器厚5mmの内側容器3と、該内側容器3の外径より大きい内径を有しかつ内側容器3の内底面に小塊5群を介し収容されるLT単結晶インゴット(6インチ径)1の外周面を囲むようにして配置される内径φ280mm、高さ280mm、筒厚5mmの外側筒体2とで構成されている。
[Example 1]
As shown in FIG. 1, the ceramic container used in the present example is an inner container 3 having an outer diameter of 260 mm, a height of 45 mm, and a container thickness of 5 mm. And an inner diameter larger than the outer diameter of the inner container 3 and arranged so as to surround the outer peripheral surface of the LT single crystal ingot (6 inch diameter) 1 accommodated on the inner bottom surface of the inner container 3 via the small clusters 5 groups. The outer cylinder 2 has an inner diameter of 280 mm, a height of 280 mm, and a cylinder thickness of 5 mm.

また、内側容器3と外側筒体2とで構成されるセラミック製容器は、抵抗加熱式のヒータを備えた電気炉(図示せず)内の平坦状炉床台6に板状スペーサ4を介在させた状態で載置され、これにより内側容器3の外底面が露出して電気炉内の加熱された空気(以下、加熱空気と称する)に上記外底面が曝されるようになっている。   The ceramic container composed of the inner container 3 and the outer cylinder 2 has a plate-like spacer 4 interposed in a flat hearth base 6 in an electric furnace (not shown) equipped with a resistance heating heater. As a result, the outer bottom surface of the inner container 3 is exposed, and the outer bottom surface is exposed to heated air in the electric furnace (hereinafter referred to as heated air).

尚、セラミック製容器の材質はアルミナ(酸化アルミニウム)とした。また、板状スペーサ4は、図3に示すように4枚の円弧状板材で構成され、その材質はセラミック製容器と同一で、かつ、円弧状板材の厚さは10mmとした。また、上記小塊5は、LT単結晶と同一材料で構成され、LT単結晶を粉砕し、目開き10mmの篩いで粗大な単結晶を除去し、かつ、目開き2mmの篩いで微細な結晶粉を除去して塊径が2mm〜10mm程度の小塊群を得た後、小塊群層の厚さが30mmとなるように上記内側容器3の内底面に敷き詰められている。また、図3中、符号dは、外側筒体2の内径と内側容器3の外径差による隙間を示している。   The material of the ceramic container was alumina (aluminum oxide). Further, the plate-like spacer 4 is composed of four arc-shaped plate members as shown in FIG. 3, the material is the same as the ceramic container, and the thickness of the arc-shaped plate member is 10 mm. The small blob 5 is made of the same material as the LT single crystal, the LT single crystal is pulverized, coarse single crystals are removed with a sieve having an opening of 10 mm, and fine crystals are obtained with a sieve having an opening of 2 mm. After the powder is removed to obtain a small mass group having a mass diameter of about 2 mm to 10 mm, it is spread on the inner bottom surface of the inner container 3 so that the thickness of the small mass group layer is 30 mm. Further, in FIG. 3, a symbol d indicates a gap due to a difference between the inner diameter of the outer cylinder 2 and the outer diameter of the inner container 3.

そして、セラミック製容器を構成する内側容器3と外側筒体2が共に板状スペーサ4に載置できるように、該板状スペーサ4を構成する4枚の円弧状板材を図3に示すように平坦状炉床台(図示せず)上に配置し、かつ、小塊5群が内底面に敷き詰められた内側容器3を4枚の円弧状板材上に載置し、小塊5群を介して内側容器3の内底面にLT単結晶インゴット1を収容した後、該LT単結晶インゴット1の外周面を囲むように外側筒体2を4枚の円弧状板材上に載置した。   Then, the four arc-shaped plate members constituting the plate-like spacer 4 are shown in FIG. 3 so that both the inner vessel 3 and the outer cylinder 2 constituting the ceramic vessel can be placed on the plate-like spacer 4. An inner container 3 that is placed on a flat hearth (not shown) and in which small groups 5 are spread on the inner bottom surface is placed on four arc-shaped plate members, After accommodating the LT single crystal ingot 1 on the inner bottom surface of the inner container 3, the outer cylindrical body 2 was placed on four arc-shaped plate members so as to surround the outer peripheral surface of the LT single crystal ingot 1.

この際、4枚の円弧状板材で構成される板状スペーサ4と接する内側容器3外底面の面積が該外底面全面積の10%となるように調整し、かつ、内側容器3外底面の外周部に対し4枚の円弧状板材を上下左右対称となるように配置することで、上記内側容器3外底面に加熱空気を給排する4個の通気口(空隙)が上下左右対称に形成されている。   At this time, the area of the outer bottom surface of the inner container 3 in contact with the plate-like spacer 4 constituted by four arc-shaped plate members is adjusted to be 10% of the total area of the outer bottom surface, By arranging the four arc-shaped plate members so as to be vertically and horizontally symmetrical with respect to the outer peripheral portion, four vent holes (air gaps) for supplying and discharging heated air to the outer bottom surface of the inner container 3 are formed vertically and horizontally symmetrically. Has been.

そして、抵抗加熱式のヒータを備えた上記電気炉内において、温度1400℃で40時間のアニール処理(熱処理)を実施した。   Then, annealing treatment (heat treatment) was performed at a temperature of 1400 ° C. for 40 hours in the electric furnace equipped with a resistance heating heater.

アニール処理(熱処理)完了後における内側容器3と外側筒体2の外観、および、内側容器3の内底面を調べたところ、クラックや劣化は確認されず、内側容器3に収容されたLT単結晶インゴット1にもクラックは確認されなかった。また、内側容器3と外側筒体2とで構成されたセラミック製容器と上記平坦状炉床台6間に介在させた4枚の円弧状板材(セラミック製板状スペーサ4)は、LT単結晶インゴット1が収容された内側容器3の荷重に対し耐性を有していることも確認された。   When the appearance of the inner container 3 and the outer cylindrical body 2 after the completion of the annealing treatment (heat treatment) and the inner bottom surface of the inner container 3 were examined, no cracks or deterioration was confirmed, and the LT single crystal contained in the inner container 3 was confirmed. No cracks were observed in the ingot 1. Also, four arc-shaped plate members (ceramic plate spacers 4) interposed between the ceramic vessel constituted by the inner vessel 3 and the outer cylindrical body 2 and the flat hearth base 6 are made of LT single crystal. It was also confirmed that the ingot 1 was resistant to the load of the inner container 3 in which the ingot 1 was accommodated.

そして、上述した条件と同一の条件でLT単結晶インゴットのアニール処理(熱処理)を10回繰り返したところ、10本の良品を得ることができた。   Then, when the annealing treatment (heat treatment) of the LT single crystal ingot was repeated 10 times under the same conditions as described above, 10 good products could be obtained.

更に、10回繰り返した後における内側容器3と外側筒体2の外観、および、内側容器3の内底面を調べたところクラックや劣化は確認されず、また、4枚の円弧状板材においても破損等は確認されなかった。   Further, when the appearance of the inner container 3 and the outer cylindrical body 2 after 10 repetitions and the inner bottom surface of the inner container 3 were examined, no cracks or deterioration was confirmed, and the four arc-shaped plate members were also damaged. Etc. were not confirmed.

[実施例2]
上端側が閉止された図2に示す外側筒体7を適用した以外は実施例1と同様にしてLT単結晶インゴットのアニール処理(熱処理)を行い、アニール処理(熱処理)完了後における内側容器3と外側筒体7の外観、および、内側容器3の内底面を調べたところ、クラックや劣化は確認されず、内側容器3に収容されたLT単結晶インゴット1にもクラックは確認されなかった。また、内側容器3と外側筒体7とで構成されたセラミック製容器と上記平坦状炉床台6間に介在させた4枚の円弧状板材(セラミック製板状スペーサ4)は、LT単結晶インゴット1が収容された内側容器3の荷重に対し耐性を有していることも確認された。
[Example 2]
The LT single crystal ingot is annealed (heat treated) in the same manner as in Example 1 except that the outer cylindrical body 7 shown in FIG. 2 whose upper end is closed is applied, and the inner container 3 after the annealing (heat treated) is completed. When the appearance of the outer cylindrical body 7 and the inner bottom surface of the inner container 3 were examined, no cracks or deterioration was confirmed, and no cracks were confirmed in the LT single crystal ingot 1 accommodated in the inner container 3. Further, four arc-shaped plate members (ceramic plate spacers 4) interposed between the ceramic vessel constituted by the inner vessel 3 and the outer cylindrical body 7 and the flat hearth base 6 are made of LT single crystal. It was also confirmed that the ingot 1 was resistant to the load of the inner container 3 in which the ingot 1 was accommodated.

そして、実施例1と同様にしてLT単結晶インゴットのアニール処理(熱処理)を10回繰り返したところ、実施例1と同様、10本の良品を得ることができた。   Then, when the annealing treatment (heat treatment) of the LT single crystal ingot was repeated 10 times in the same manner as in Example 1, 10 good products could be obtained as in Example 1.

また、10回繰り返した後における内側容器3と外側筒体7の外観、および、内側容器3の内底面を調べたところクラックや劣化は確認されず、また、4枚の円弧状板材においても破損等は確認されなかった。   Further, when the appearance of the inner container 3 and the outer cylindrical body 7 after 10 repetitions and the inner bottom surface of the inner container 3 were examined, no cracks or deterioration was confirmed, and the four arc-shaped plate members were also damaged. Etc. were not confirmed.

[実施例3]
4枚の円弧状板材で構成される板状スペーサ4と接する内側容器3外底面の面積が該外底面全面積の50%となるように調整した以外は実施例1と同様にしてLT単結晶インゴットのアニール処理(熱処理)を行い、アニール処理(熱処理)完了後における内側容器3と外側筒体2の外観、および、内側容器3の内底面を調べたところ、クラックや劣化は確認されず、内側容器3に収容されたLT単結晶インゴット1にもクラックは確認されなかった。また、内側容器3と外側筒体2とで構成されたセラミック製容器と上記平坦状炉床台6間に介在させた4枚の円弧状板材(セラミック製板状スペーサ4)は、LT単結晶インゴット1が収容された内側容器3の荷重に対し耐性を有していることも確認された。
[Example 3]
LT single crystal in the same manner as in Example 1 except that the area of the outer bottom surface of the inner container 3 in contact with the plate-like spacer 4 composed of four arc-shaped plate members is adjusted to be 50% of the total area of the outer bottom surface. When the ingot is annealed (heat treatment), and the appearance of the inner container 3 and the outer cylinder 2 after the annealing process (heat treatment) is completed and the inner bottom surface of the inner container 3 are examined, cracks and deterioration are not confirmed. No cracks were observed in the LT single crystal ingot 1 accommodated in the inner container 3. Also, four arc-shaped plate members (ceramic plate spacers 4) interposed between the ceramic vessel constituted by the inner vessel 3 and the outer cylindrical body 2 and the flat hearth base 6 are made of LT single crystal. It was also confirmed that the ingot 1 was resistant to the load of the inner container 3 in which the ingot 1 was accommodated.

そして、実施例1と同様にしてLT単結晶インゴットのアニール処理(熱処理)を10回繰り返したところ、実施例1と同様、10本の良品を得ることができた。   Then, when the annealing treatment (heat treatment) of the LT single crystal ingot was repeated 10 times in the same manner as in Example 1, 10 good products could be obtained as in Example 1.

また、10回繰り返した後における内側容器3と外側筒体2の外観、および、内側容器3の内底面を調べたところクラックや劣化は確認されず、また、4枚の円弧状板材においても破損等は確認されなかった。   Further, when the appearance of the inner container 3 and the outer cylindrical body 2 after 10 repetitions and the inner bottom surface of the inner container 3 were examined, no cracks or deterioration was confirmed, and the four arc-shaped plate members were also damaged. Etc. were not confirmed.

[実施例4]
4枚の円弧状板材で構成される板状スペーサ4と接する内側容器3外底面の面積が該外底面全面積の60%となるように調整した以外は実施例1と同様にしてLT単結晶インゴットのアニール処理(熱処理)を行い、アニール処理(熱処理)完了後における内側容器3と外側筒体2の外観、および、内側容器3の内底面を調べたところ、クラックや劣化は確認されず、内側容器3に収容されたLT単結晶インゴット1にもクラックは確認されなかった。また、内側容器3と外側筒体2とで構成されたセラミック製容器と上記平坦状炉床台6間に介在させた4枚の円弧状板材(セラミック製板状スペーサ4)は、LT単結晶インゴット1が収容された内側容器3の荷重に対し耐性を有していることも確認された。
[Example 4]
LT single crystal in the same manner as in Example 1 except that the area of the outer bottom surface of the inner container 3 in contact with the plate-like spacer 4 composed of four arc-shaped plate members is adjusted to be 60% of the total area of the outer bottom surface. When the ingot is annealed (heat treatment), and the appearance of the inner container 3 and the outer cylinder 2 after the annealing process (heat treatment) is completed and the inner bottom surface of the inner container 3 are examined, cracks and deterioration are not confirmed. No cracks were observed in the LT single crystal ingot 1 accommodated in the inner container 3. Also, four arc-shaped plate members (ceramic plate spacers 4) interposed between the ceramic vessel constituted by the inner vessel 3 and the outer cylindrical body 2 and the flat hearth base 6 are made of LT single crystal. It was also confirmed that the ingot 1 was resistant to the load of the inner container 3 in which the ingot 1 was accommodated.

そして、実施例1と同様にしてLT単結晶インゴットのアニール処理(熱処理)を10回繰り返したところ、8本の良品を得ることができたが、2本のLT単結晶インゴットについては、若干、クラックが確認された。尚、実施例1に較べ、若干、処理効果に劣っている原因は、板状スペーサ4と接する内側容器3外底面の面積が該外底面全面積の60%と大きいため、実施例1に較べて露出する内側容器3外底面の面積が減少した分、加熱空気による外底面の加熱効果が低下したためと考えられる。   Then, when the annealing treatment (heat treatment) of the LT single crystal ingot was repeated 10 times in the same manner as in Example 1, eight good products could be obtained, but about two LT single crystal ingots, Cracks were confirmed. The reason why the processing effect is slightly inferior to that of the first embodiment is that the area of the outer bottom surface of the inner container 3 in contact with the plate-like spacer 4 is as large as 60% of the total area of the outer bottom surface. This is probably because the heating effect of the outer bottom surface by the heated air is reduced by the reduction in the area of the outer bottom surface of the inner container 3 exposed.

また、10回繰り返した後における内側容器3と外側筒体2の外観、および、内側容器3の内底面を調べたところ、若干、クラックが確認されたが、円弧状板材の破損等は確認されなかった。   Further, when the appearance of the inner container 3 and the outer cylindrical body 2 after repeating 10 times and the inner bottom surface of the inner container 3 were examined, some cracks were confirmed, but the arc-shaped plate material was not damaged. There wasn't.

[実施例5]
内側容器3と外側筒体2とで構成されるセラミック製容器と上記平坦状炉床台6間に介在されるセラミック製板状スペーサ4が、図4に示すような単一通気口(空隙)を形成する平面C文字形状を有する1枚のセラミック製板材で構成されている以外は実施例1と同様にしてLT単結晶インゴットのアニール処理(熱処理)を行い、アニール処理(熱処理)完了後における内側容器3と外側筒体2の外観、および、内側容器3の内底面を調べたところ、若干、クラックや劣化が確認されたが、内側容器3に収容されたLT単結晶インゴット1にクラックは確認されなかった。また、内側容器3と外側筒体2とで構成されたセラミック製容器と平坦状炉床台6間に介在させた平面C文字形状を有するセラミック製板状スペーサ4は、LT単結晶インゴット1が収容された内側容器3の荷重に対し耐性を有していることも確認された。
[Example 5]
The ceramic plate-like spacer 4 interposed between the ceramic vessel constituted by the inner vessel 3 and the outer cylindrical body 2 and the flat hearth base 6 has a single vent (gap) as shown in FIG. The LT single crystal ingot is annealed (heat treatment) in the same manner as in Example 1 except that it is composed of a single ceramic plate material having a planar C-character shape forming the shape, and after the annealing treatment (heat treatment) is completed. When the appearance of the inner container 3 and the outer cylindrical body 2 and the inner bottom surface of the inner container 3 were examined, some cracks and deterioration were confirmed, but cracks were found in the LT single crystal ingot 1 accommodated in the inner container 3. It was not confirmed. In addition, the ceramic plate-like spacer 4 having a plane C character shape interposed between the ceramic vessel constituted by the inner vessel 3 and the outer cylindrical body 2 and the flat hearth base 6 is composed of the LT single crystal ingot 1. It was also confirmed that it had resistance to the load of the accommodated inner container 3.

そして、実施例1と同様にしてLT単結晶インゴットのアニール処理(熱処理)を10回繰り返したところ、6本の良品を得ることができたが、4本のLT単結晶インゴットについては、クラックが確認された。尚、実施例1に較べ、処理効果に劣る原因は、平面C文字形状を有するセラミック製板状スペーサ4が適用されたことで通気口(空隙)が単一となり、単一の通気口(空隙)から内側容器3外底面に給排される加熱空気が減少した分、外底面の加熱効果が低下し、かつ、内側容器3と外側筒体2との隙間から外側筒体2内へ供給される加熱空気も減少したためと考えられる。   Then, when the annealing treatment (heat treatment) of the LT single crystal ingot was repeated 10 times in the same manner as in Example 1, six good products could be obtained, but cracks were observed in the four LT single crystal ingots. confirmed. The reason why the processing effect is inferior to that of Example 1 is that the ceramic plate-like spacer 4 having a plane C character shape is applied, so that the ventilation hole (void) becomes a single, and the single ventilation hole (void) ), The heating effect supplied to the outer bottom surface of the inner container 3 is reduced, and the heating effect of the outer bottom surface is reduced, and the air is supplied into the outer cylindrical body 2 from the gap between the inner container 3 and the outer cylindrical body 2. This is thought to be due to a decrease in heated air.

また、10回繰り返した後における内側容器3と外側筒体2の外観、および、内側容器3の内底面を調べたところ、クラックと放射状の破損が一部に確認されたが、平面C文字形状を有するセラミック製板状スペーサ4の破損等は確認されなかった。   Further, when the appearance of the inner container 3 and the outer cylindrical body 2 after 10 repetitions and the inner bottom surface of the inner container 3 were examined, cracks and radial breakage were partially confirmed. No breakage or the like of the ceramic plate-like spacer 4 having the above was confirmed.

[実施例6]
上記セラミック製板状スペーサ4を構成する各円弧状板材の厚さを5mmとした以外は実施例1と同様にしてLT単結晶インゴットのアニール処理(熱処理)を行い、アニール処理(熱処理)完了後における内側容器3と外側筒体2の外観、および、内側容器3の内底面を調べたところ、クラックや劣化は確認されず、内側容器3に収容されたLT単結晶インゴット1にもクラックは確認されなかった。但し、内側容器3と外側筒体2とで構成されたセラミック製容器と平坦状炉床台6間に介在させた4枚の円弧状板材(セラミック製板状スペーサ4)は、厚さが5mmと薄い分、LT単結晶インゴット1を収容した内側容器3の荷重に対する耐性が、若干、劣っていることも確認された。
[Example 6]
An LT single crystal ingot is annealed (heat treatment) in the same manner as in Example 1 except that the thickness of each arc-shaped plate material constituting the ceramic plate-like spacer 4 is 5 mm, and after the annealing treatment (heat treatment) is completed. When the outer appearance of the inner container 3 and the outer cylindrical body 2 and the inner bottom surface of the inner container 3 were examined, cracks and deterioration were not confirmed, and cracks were also confirmed in the LT single crystal ingot 1 accommodated in the inner container 3. Was not. However, the four arc-shaped plate members (ceramic plate spacers 4) interposed between the ceramic vessel constituted by the inner vessel 3 and the outer cylindrical body 2 and the flat hearth base 6 have a thickness of 5 mm. It was also confirmed that the resistance to the load of the inner container 3 containing the LT single crystal ingot 1 was slightly inferior.

そして、実施例1と同様にしてLT単結晶インゴットのアニール処理(熱処理)を10回繰り返したところ、実施例1と同様、10本の良品を得ることができた。   Then, when the annealing treatment (heat treatment) of the LT single crystal ingot was repeated 10 times in the same manner as in Example 1, 10 good products could be obtained as in Example 1.

また、10回繰り返した後における内側容器3と外側筒体2の外観、および、内側容器3の内底面を調べたところクラックや劣化は確認されなかったが、4枚の円弧状板材に関しては破損等が確認された。   Further, when the appearance of the inner container 3 and the outer cylindrical body 2 after 10 repetitions and the inner bottom surface of the inner container 3 were examined, cracks and deterioration were not confirmed, but the four arc-shaped plate members were damaged. Etc. were confirmed.

[比較例1]
比較例1で使用されるセラミック製容器は、図5に示すように、上部が開放されかつ実施例1と同一の小塊5群が敷き詰められる内底面を有する筒形下側部材9と、該下側部材9に収容されたLT単結晶インゴット1全体を覆う内壁面と天壁面を有しかつ上記下側部材9に嵌合される筒形上側部材8とで構成され、これ等下側部材9と上側部材8の材質は、実施例1と同一のアルミナ(酸化アルミニウム)が用いられている。また、上記下側部材9の形状は、1辺が200mm、高さが100mmで、かつ、上部が開放された角型の箱状構造体で構成されており、上記上側部材8の形状も下側部材9と同一になっている。
[Comparative Example 1]
As shown in FIG. 5, the ceramic container used in Comparative Example 1 has a cylindrical lower member 9 having an inner bottom surface in which the upper part is opened and the same small group 5 as in Example 1 is spread, The lower member 9 is composed of an inner wall surface covering the entire LT single crystal ingot 1 accommodated in the lower member 9 and a cylindrical upper member 8 fitted to the lower member 9 and having a ceiling wall surface. As the material for the upper member 9 and the upper member 8, the same alumina (aluminum oxide) as in the first embodiment is used. The shape of the lower member 9 is a rectangular box-shaped structure having a side of 200 mm, a height of 100 mm, and an open top, and the shape of the upper member 8 is also lower. It is the same as the side member 9.

そして、下側部材9の内底面に小塊5群層の厚さが30mmとなるように敷き詰め、かつ、小塊5群層上に直径160mmのLT単結晶インゴット1を図5に示すように載置した後、下側部材9と同一形状の上記上側部材8を下側部材9に嵌合させてLT単結晶インゴット1全体がセラミック製容器で覆われた状態とした。   Then, the LT single crystal ingot 1 having a diameter of 160 mm is spread on the inner bottom surface of the lower member 9 so that the thickness of the small nodule 5 group layer is 30 mm as shown in FIG. After the placement, the upper member 8 having the same shape as the lower member 9 was fitted to the lower member 9 so that the entire LT single crystal ingot 1 was covered with a ceramic container.

そして、図5に示すようにLT単結晶インゴット1が収容されたセラミック製容器を、電気炉(図示せず)内の平坦状炉床台6にセラミック製板状スペーサを介さずに直接載置した後、温度1400℃で40時間のアニール処理(熱処理)を行い、アニール処理(熱処理)完了後における下側部材9の外観、および、下側部材9の内底面を調べたところ、上記内底面の中央部にクラックと部分破損が確認され、下側部材9に収容されたLT単結晶インゴット1にも、若干、クラックが確認された。更に、熱処理されるLT単結晶インゴット1の直径が大きくなるに従い、下側部材9における内底面の破損やLT単結晶インゴット1におけるクラックの発生が顕著になることも確認された。   Then, as shown in FIG. 5, the ceramic container containing the LT single crystal ingot 1 is directly placed on the flat hearth base 6 in the electric furnace (not shown) without the ceramic plate spacer. After that, annealing treatment (heat treatment) was performed at a temperature of 1400 ° C. for 40 hours, and the appearance of the lower member 9 and the inner bottom surface of the lower member 9 after completion of the annealing treatment (heat treatment) were examined. Cracks and partial breakage were confirmed at the center of the LT, and some cracks were also observed in the LT single crystal ingot 1 accommodated in the lower member 9. Further, it was confirmed that as the diameter of the LT single crystal ingot 1 to be heat-treated increases, damage to the inner bottom surface of the lower member 9 and generation of cracks in the LT single crystal ingot 1 become more prominent.

尚、図5のセラミック製容器に代えて、図6に示す下側部材12、中側部材11、および、上側部材10で構成されるセラミック製容器を適用し、かつ、電気炉(図示せず)内の平坦状炉床台6にセラミック製板状スペーサを介さずに上記セラミック製容器を直接載置した場合も同様であった。   In place of the ceramic container shown in FIG. 5, a ceramic container constituted by the lower member 12, the middle member 11, and the upper member 10 shown in FIG. 6 is applied, and an electric furnace (not shown) is used. The same was true when the ceramic container was placed directly on the flat hearth base 6) without a ceramic plate spacer.

[比較例2]
抵抗加熱式のヒータを備えた電気炉(図示せず)内の平坦状炉床台6に、板状スペーサ4を介さずに実施例1と同一構造のセラミック製容器(LT単結晶インゴット1が収容されている)が直接載置された以外は実施例1と同様にしてLT単結晶インゴットのアニール処理(熱処理)を実施した。
[Comparative Example 2]
A ceramic container (LT single crystal ingot 1 having the same structure as that of the first embodiment) is disposed on a flat hearth base 6 in an electric furnace (not shown) provided with a resistance heating type heater without using a plate-like spacer 4. The LT single crystal ingot was annealed (heat treated) in the same manner as in Example 1 except that the substrate was directly placed.

そして、アニール処理(熱処理)完了後における内側容器3と外側筒体2の外観、および、内側容器3の内底面を調べたところ、内側容器3の内底面にクラックが発生し、放射状に破損していることが確認された。また、内側容器3に収容されたLT単結晶インゴット1にクラックは確認されなかったが、内側容器3の破損した内底面から小塊5の一部が流出したことで、LT単結晶インゴット1が傾いていた。   Then, when the appearance of the inner container 3 and the outer cylindrical body 2 after the annealing treatment (heat treatment) was completed and the inner bottom surface of the inner container 3 were examined, cracks occurred on the inner bottom surface of the inner container 3 and were damaged radially. It was confirmed that In addition, cracks were not confirmed in the LT single crystal ingot 1 accommodated in the inner container 3, but the LT single crystal ingot 1 was removed due to a part of the small mass 5 flowing out from the damaged inner bottom surface of the inner container 3. It was leaning.

更に、上述した条件と同一の条件でLT単結晶インゴットのアニール処理(熱処理)を3回実施したが、3回共、内側容器3の内底面にクラックが発生していた。また、3回中の2回はLT単結晶インゴットにクラックが確認された。   Furthermore, the LT single crystal ingot was annealed (heat treatment) three times under the same conditions as described above, but cracks occurred on the inner bottom surface of the inner vessel 3 three times. In addition, cracks were confirmed in the LT single crystal ingot twice in 3 times.

[比較例3]
抵抗加熱式のヒータを備えた電気炉(図示せず)内の平坦状炉床台6に、板状スペーサ4を介さずに実施例2と同一構造のセラミック製容器(LT単結晶インゴット1が収容されている)が直接載置された以外は実施例2と同様にしてLT単結晶インゴットのアニール処理(熱処理)を実施した。
[Comparative Example 3]
A ceramic vessel (LT single crystal ingot 1 having the same structure as in Example 2) is provided on a flat hearth base 6 in an electric furnace (not shown) equipped with a resistance heating type heater without using a plate-like spacer 4. The LT single crystal ingot was annealed (heat treatment) in the same manner as in Example 2 except that the substrate was directly placed.

そして、アニール処理(熱処理)完了後における内側容器3と外側筒体7の外観、および、内側容器3の内底面を調べたところ、内側容器3の内底面にクラックが発生し、放射状に破損していることが確認された。また、内側容器3に収容されたLT単結晶インゴット1にクラックは確認されなかったが、内側容器3の破損した内底面から小塊5の一部が流出したことで、LT単結晶インゴット1が傾いていた。   Then, when the appearance of the inner container 3 and the outer cylindrical body 7 after the annealing treatment (heat treatment) was completed and the inner bottom surface of the inner container 3 were examined, cracks occurred on the inner bottom surface of the inner container 3 and were damaged radially. It was confirmed that In addition, cracks were not confirmed in the LT single crystal ingot 1 accommodated in the inner container 3, but a part of the small nodule 5 flowed out from the damaged inner bottom surface of the inner container 3, so that the LT single crystal ingot 1 It was leaning.

[比較例4]
内側容器3と外側筒体2とで構成されるセラミック製容器と上記平坦状炉床台6間に介在されるセラミック製板状スペーサ4が、本体内部に空隙があるリング状セラミック製板材で構成されている以外は実施例1と同様にしてLT単結晶インゴットのアニール処理(熱処理)を実施した。
[Comparative Example 4]
The ceramic plate-like spacer 4 interposed between the ceramic vessel constituted by the inner vessel 3 and the outer cylindrical body 2 and the flat hearth base 6 is constituted by a ring-shaped ceramic plate material having a gap inside the main body. An LT single crystal ingot was annealed (heat treated) in the same manner as in Example 1 except for the above.

そして、アニール処理(熱処理)完了後における内側容器3と外側筒体2の外観、および、内側容器3の内底面を調べたところ、内側容器3の内底面にクラックが発生し、放射状に破損していることが確認された。また、内側容器3に収容されたLT単結晶インゴット1にもクラックが確認された。   Then, when the appearance of the inner container 3 and the outer cylindrical body 2 after the annealing treatment (heat treatment) was completed and the inner bottom surface of the inner container 3 were examined, cracks occurred on the inner bottom surface of the inner container 3 and were damaged radially. It was confirmed that Further, cracks were also confirmed in the LT single crystal ingot 1 accommodated in the inner container 3.

リング状セラミック製板材を適用した場合、内側容器3の外底面へ加熱空気を給排する通気口(空隙)が無くなることから、上記外底面と外側筒体2内への加熱空気の供給が著しく減少するため、内側容器3の内底面とLT単結晶インゴットに上記クラックが発生していると考えられる。   When the ring-shaped ceramic plate material is applied, the supply of heated air to the outer bottom surface and the outer cylinder 2 is remarkably eliminated because there is no vent (gap) for supplying and discharging heated air to the outer bottom surface of the inner container 3. Since it decreases, it is considered that the crack is generated in the inner bottom surface of the inner container 3 and the LT single crystal ingot.

本発明に係る酸化物単結晶の熱処理方法によれば、酸化物単結晶が収容された容器外底面の中心部と周辺部を均等に加熱できるため、タンタル酸リチウム単結晶やニオブ酸リチウム単結晶インゴットの熱歪みを緩和させる熱処理方法に用いられる産業上の利用可能性を有している。   According to the heat treatment method for an oxide single crystal according to the present invention, since the central portion and the peripheral portion of the outer bottom surface of the container in which the oxide single crystal is accommodated can be heated uniformly, a lithium tantalate single crystal or a lithium niobate single crystal It has industrial applicability for use in heat treatment methods that relieve thermal distortion of ingots.

d 外側筒体2の内径と内側容器3の外径差による隙間
1 LT単結晶インゴット(酸化物単結晶)
2 外側筒体
3 内側容器
4 板状スペーサ
5 小塊
6 平坦状炉床台
7 上端側が閉止された外側筒体
8 上側部材
9 下側部材
10 上側部材
11 中側部材
12 下側部材
d Gap due to difference in inner diameter of outer cylinder 2 and outer diameter of inner container 3 1 LT single crystal ingot (oxide single crystal)
DESCRIPTION OF SYMBOLS 2 Outer cylinder 3 Inner container 4 Plate spacer 5 Small lump 6 Flat hearth stand 7 Outer cylinder with the upper end closed 8 Upper member 9 Lower member 10 Upper member 11 Middle member 12 Lower member

Claims (6)

引き上げ法により育成された酸化物単結晶インゴットをセラミック製の容器に収容し、加熱炉内に設置された平坦状炉床台に上記容器を載置して容器内の酸化物単結晶インゴットを熱処理する酸化物単結晶の熱処理方法において、
上記酸化物単結晶インゴットと同一材料で構成された塊径2mm以上10mm未満の小塊群が内底面に敷き詰められかつ該小塊群を介し酸化物単結晶インゴットが収容される内側容器と、該内側容器の外径より大きい内径を有しかつ内側容器に収容された酸化物単結晶インゴットの外周面を囲むように配置される外側筒体とで、上記セラミック製の容器を構成し、かつ、
上記平坦状炉床台と、該炉床台に載置される内側容器並びに外側筒体との間に板状スペーサを介在させて、露出する内側容器外底面に加熱炉内の加熱された空気を供給すると共に、上記内側容器と外側筒体との隙間から加熱された空気を外側筒体内に供給して酸化物単結晶インゴットを熱処理することを特徴とする酸化物単結晶の熱処理方法。
The oxide single crystal ingot grown by the pulling method is accommodated in a ceramic vessel, and the vessel is placed on a flat hearth installed in a heating furnace to heat-treat the oxide single crystal ingot in the vessel. In the heat treatment method of the oxide single crystal to be
An inner container in which a small lump group having a lump diameter of 2 mm or more and less than 10 mm made of the same material as the oxide single crystal ingot is spread on the inner bottom surface and the oxide single crystal ingot is accommodated through the small lump group; An outer cylindrical body having an inner diameter larger than the outer diameter of the inner container and disposed so as to surround the outer peripheral surface of the oxide single crystal ingot accommodated in the inner container, and constituting the ceramic container; and
A plate-like spacer is interposed between the flat hearth base and the inner vessel and outer cylinder mounted on the hearth base, and the heated air in the heating furnace is exposed on the outer bottom surface of the inner vessel. And heating the oxide single crystal ingot by supplying air heated from the gap between the inner container and the outer cylindrical body into the outer cylindrical body.
板状スペーサが上記容器と同一のセラミック材料で構成されることを特徴とする請求項1に記載の酸化物単結晶の熱処理方法。   2. The oxide single crystal heat treatment method according to claim 1, wherein the plate spacer is made of the same ceramic material as that of the container. 上記板状スペーサと接する内側容器外底面の面積が該外底面全面積の10%以上50%以下であることを特徴とする請求項1または2に記載の酸化物単結晶の熱処理方法。   The method for heat-treating an oxide single crystal according to claim 1 or 2, wherein the area of the outer bottom surface of the inner container in contact with the plate spacer is 10% or more and 50% or less of the total area of the outer bottom surface. 露出する上記内側容器外底面の中央部に加熱された空気を給排する2箇所以上の通気口が対称的に形成されるように複数の板材で上記板状スペーサを構成することを特徴とする請求項1〜3のいずれかに記載の酸化物単結晶の熱処理方法。   The plate-like spacer is constituted by a plurality of plate materials so that two or more vent holes for supplying and discharging heated air are symmetrically formed in the central portion of the exposed outer bottom surface of the inner container. The heat processing method of the oxide single crystal in any one of Claims 1-3. 上記板状スペーサの厚さが10mm以上に設定されていることを特徴とする請求項1〜4のいずれかに記載の酸化物単結晶の熱処理方法。   The oxide single crystal heat treatment method according to any one of claims 1 to 4, wherein a thickness of the plate spacer is set to 10 mm or more. 上記酸化物単結晶がタンタル酸リチウム単結晶またはニオブ酸リチウム単結晶で構成されることを特徴とする請求項1〜5のいずれかに記載の酸化物単結晶の熱処理方法。   6. The oxide single crystal heat treatment method according to claim 1, wherein the oxide single crystal is composed of a lithium tantalate single crystal or a lithium niobate single crystal.
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