GB792006A - Improvements in or relating to the preparation of single crystals of silicon - Google Patents

Improvements in or relating to the preparation of single crystals of silicon

Info

Publication number
GB792006A
GB792006A GB24510/55A GB2451055A GB792006A GB 792006 A GB792006 A GB 792006A GB 24510/55 A GB24510/55 A GB 24510/55A GB 2451055 A GB2451055 A GB 2451055A GB 792006 A GB792006 A GB 792006A
Authority
GB
United Kingdom
Prior art keywords
silicon
seed
temperature
crystal
melt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB24510/55A
Inventor
Stanley Edwin Bradshaw
Abraham Isaac Mlavsky
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co PLC
Original Assignee
General Electric Co PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL209709D priority Critical patent/NL209709A/xx
Priority to NL105573D priority patent/NL105573C/xx
Application filed by General Electric Co PLC filed Critical General Electric Co PLC
Priority to GB24510/55A priority patent/GB792006A/en
Priority to US603327A priority patent/US2851342A/en
Priority to FR1155771D priority patent/FR1155771A/en
Priority to DEG20388A priority patent/DE1042552B/en
Publication of GB792006A publication Critical patent/GB792006A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

<PICT:0792006/III/1> In a method of preparing a single crystal of silicon by dipping a seed crystal in a melt of silicon and progressively withdrawing the seed crystal upwards so that a single crystal is propagated from the seed, the silicon is purified by maintaining the melt at a temperature at least 30 DEG C. above the melting point of the silicon under a vacuum corresponding to a pressure of not more than 10-3 millimetres of mercury before the seed is dipped into the melt, and the vacuum is maintained thereafter during the growing of the crystal. Silicon 25 is placed in a silica crucible 7 and a vacuum corresponding to 10-5 to 10-6 millimetres of mercury is obtained by a pump connected to a tube 5. The silicon is melted by energizing a heater 8 in the form of a graphite cup holding the crucible 7, and the temperature is raised to 30 DEG C. above the melting point of the silicon to evaporate impurities. The temperature is measured by a thermocouple 20, 21. After an hour a silicon seed crystal 26 in a chuck 23 on a rod 22 is dipped into the molten silicon 25, and the temperature is lowered to the point at which it begins to solidify on the seed 26, and a single crystal is grown by slowly moving the rod 22 upwards and rotating it.
GB24510/55A 1955-08-25 1955-08-25 Improvements in or relating to the preparation of single crystals of silicon Expired GB792006A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
NL209709D NL209709A (en) 1955-08-25
NL105573D NL105573C (en) 1955-08-25
GB24510/55A GB792006A (en) 1955-08-25 1955-08-25 Improvements in or relating to the preparation of single crystals of silicon
US603327A US2851342A (en) 1955-08-25 1956-08-10 Preparation of single crystals of silicon
FR1155771D FR1155771A (en) 1955-08-25 1956-08-14 Process for preparing single crystals of silicon
DEG20388A DE1042552B (en) 1955-08-25 1956-08-24 Method for producing a single crystal from silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB24510/55A GB792006A (en) 1955-08-25 1955-08-25 Improvements in or relating to the preparation of single crystals of silicon

Publications (1)

Publication Number Publication Date
GB792006A true GB792006A (en) 1958-03-19

Family

ID=10212792

Family Applications (1)

Application Number Title Priority Date Filing Date
GB24510/55A Expired GB792006A (en) 1955-08-25 1955-08-25 Improvements in or relating to the preparation of single crystals of silicon

Country Status (5)

Country Link
US (1) US2851342A (en)
DE (1) DE1042552B (en)
FR (1) FR1155771A (en)
GB (1) GB792006A (en)
NL (2) NL105573C (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3186880A (en) * 1962-10-10 1965-06-01 Martin Marietta Corp Method of producing unsupported epitaxial films of germanium by evaporating the substrate

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL225538A (en) * 1955-11-02
US3330251A (en) * 1955-11-02 1967-07-11 Siemens Ag Apparatus for producing highest-purity silicon for electric semiconductor devices
US2975036A (en) * 1956-10-05 1961-03-14 Motorola Inc Crystal pulling apparatus
US3036892A (en) * 1958-03-05 1962-05-29 Siemens Ag Production of hyper-pure monocrystal-line rods in continuous operation
NL251143A (en) * 1959-05-04
US3095279A (en) * 1960-04-07 1963-06-25 Tung Sol Electric Inc Apparatus for producing pure silicon
US3053635A (en) * 1960-09-26 1962-09-11 Clevite Corp Method of growing silicon carbide crystals
US3277865A (en) * 1963-04-01 1966-10-11 United States Steel Corp Metal-vapor source with heated reflecting shield
US3359077A (en) * 1964-05-25 1967-12-19 Globe Union Inc Method of growing a crystal
DE1261842B (en) * 1964-12-12 1968-02-29 Siemens Ag Process for producing high purity silicon
DE1521494B1 (en) * 1966-02-25 1970-11-26 Siemens Ag Device for diffusing foreign matter into semiconductor bodies

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2747971A (en) * 1953-07-20 1956-05-29 Westinghouse Electric Corp Preparation of pure crystalline silicon
US2686212A (en) * 1953-08-03 1954-08-10 Gen Electric Electric heating apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3186880A (en) * 1962-10-10 1965-06-01 Martin Marietta Corp Method of producing unsupported epitaxial films of germanium by evaporating the substrate

Also Published As

Publication number Publication date
NL209709A (en)
DE1042552B (en) 1958-11-06
US2851342A (en) 1958-09-09
NL105573C (en)
FR1155771A (en) 1958-05-08

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