GB792006A - Improvements in or relating to the preparation of single crystals of silicon - Google Patents
Improvements in or relating to the preparation of single crystals of siliconInfo
- Publication number
- GB792006A GB792006A GB24510/55A GB2451055A GB792006A GB 792006 A GB792006 A GB 792006A GB 24510/55 A GB24510/55 A GB 24510/55A GB 2451055 A GB2451055 A GB 2451055A GB 792006 A GB792006 A GB 792006A
- Authority
- GB
- United Kingdom
- Prior art keywords
- silicon
- seed
- temperature
- crystal
- melt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
<PICT:0792006/III/1> In a method of preparing a single crystal of silicon by dipping a seed crystal in a melt of silicon and progressively withdrawing the seed crystal upwards so that a single crystal is propagated from the seed, the silicon is purified by maintaining the melt at a temperature at least 30 DEG C. above the melting point of the silicon under a vacuum corresponding to a pressure of not more than 10-3 millimetres of mercury before the seed is dipped into the melt, and the vacuum is maintained thereafter during the growing of the crystal. Silicon 25 is placed in a silica crucible 7 and a vacuum corresponding to 10-5 to 10-6 millimetres of mercury is obtained by a pump connected to a tube 5. The silicon is melted by energizing a heater 8 in the form of a graphite cup holding the crucible 7, and the temperature is raised to 30 DEG C. above the melting point of the silicon to evaporate impurities. The temperature is measured by a thermocouple 20, 21. After an hour a silicon seed crystal 26 in a chuck 23 on a rod 22 is dipped into the molten silicon 25, and the temperature is lowered to the point at which it begins to solidify on the seed 26, and a single crystal is grown by slowly moving the rod 22 upwards and rotating it.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL209709D NL209709A (en) | 1955-08-25 | ||
NL105573D NL105573C (en) | 1955-08-25 | ||
GB24510/55A GB792006A (en) | 1955-08-25 | 1955-08-25 | Improvements in or relating to the preparation of single crystals of silicon |
US603327A US2851342A (en) | 1955-08-25 | 1956-08-10 | Preparation of single crystals of silicon |
FR1155771D FR1155771A (en) | 1955-08-25 | 1956-08-14 | Process for preparing single crystals of silicon |
DEG20388A DE1042552B (en) | 1955-08-25 | 1956-08-24 | Method for producing a single crystal from silicon |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB24510/55A GB792006A (en) | 1955-08-25 | 1955-08-25 | Improvements in or relating to the preparation of single crystals of silicon |
Publications (1)
Publication Number | Publication Date |
---|---|
GB792006A true GB792006A (en) | 1958-03-19 |
Family
ID=10212792
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB24510/55A Expired GB792006A (en) | 1955-08-25 | 1955-08-25 | Improvements in or relating to the preparation of single crystals of silicon |
Country Status (5)
Country | Link |
---|---|
US (1) | US2851342A (en) |
DE (1) | DE1042552B (en) |
FR (1) | FR1155771A (en) |
GB (1) | GB792006A (en) |
NL (2) | NL209709A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3186880A (en) * | 1962-10-10 | 1965-06-01 | Martin Marietta Corp | Method of producing unsupported epitaxial films of germanium by evaporating the substrate |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL109287C (en) * | 1955-11-02 | |||
US3330251A (en) * | 1955-11-02 | 1967-07-11 | Siemens Ag | Apparatus for producing highest-purity silicon for electric semiconductor devices |
US2975036A (en) * | 1956-10-05 | 1961-03-14 | Motorola Inc | Crystal pulling apparatus |
US3036892A (en) * | 1958-03-05 | 1962-05-29 | Siemens Ag | Production of hyper-pure monocrystal-line rods in continuous operation |
NL251143A (en) * | 1959-05-04 | |||
US3095279A (en) * | 1960-04-07 | 1963-06-25 | Tung Sol Electric Inc | Apparatus for producing pure silicon |
US3053635A (en) * | 1960-09-26 | 1962-09-11 | Clevite Corp | Method of growing silicon carbide crystals |
US3277865A (en) * | 1963-04-01 | 1966-10-11 | United States Steel Corp | Metal-vapor source with heated reflecting shield |
US3359077A (en) * | 1964-05-25 | 1967-12-19 | Globe Union Inc | Method of growing a crystal |
DE1261842B (en) * | 1964-12-12 | 1968-02-29 | Siemens Ag | Process for producing high purity silicon |
DE1521494B1 (en) * | 1966-02-25 | 1970-11-26 | Siemens Ag | Device for diffusing foreign matter into semiconductor bodies |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2747971A (en) * | 1953-07-20 | 1956-05-29 | Westinghouse Electric Corp | Preparation of pure crystalline silicon |
US2686212A (en) * | 1953-08-03 | 1954-08-10 | Gen Electric | Electric heating apparatus |
-
0
- NL NL105573D patent/NL105573C/xx active
- NL NL209709D patent/NL209709A/xx unknown
-
1955
- 1955-08-25 GB GB24510/55A patent/GB792006A/en not_active Expired
-
1956
- 1956-08-10 US US603327A patent/US2851342A/en not_active Expired - Lifetime
- 1956-08-14 FR FR1155771D patent/FR1155771A/en not_active Expired
- 1956-08-24 DE DEG20388A patent/DE1042552B/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3186880A (en) * | 1962-10-10 | 1965-06-01 | Martin Marietta Corp | Method of producing unsupported epitaxial films of germanium by evaporating the substrate |
Also Published As
Publication number | Publication date |
---|---|
NL209709A (en) | |
FR1155771A (en) | 1958-05-08 |
NL105573C (en) | |
US2851342A (en) | 1958-09-09 |
DE1042552B (en) | 1958-11-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB792006A (en) | Improvements in or relating to the preparation of single crystals of silicon | |
GB827466A (en) | Improvements in or relating to methods of and apparatus for manufacturing single crystals | |
US3088853A (en) | Method of purifying gallium by recrystallization | |
GB1031136A (en) | A method of producing monocrystalline silicon carbide | |
GB803830A (en) | Semiconductor comprising silicon and method of making it | |
US3261722A (en) | Process for preparing semiconductor ingots within a depression | |
Fullmer et al. | Crystal growth of the solid electrolyte RbAg4I5 | |
GB1353917A (en) | Method and apparatus for forming crystalline bodies of a semicon ductor material | |
GB797377A (en) | Improvements in or relating to the production of semi-conductor bodies | |
GB1388286A (en) | Monocrystalline materials | |
FR2347974A1 (en) | Crystalline silicon strips - pulled from crucible with puller rod of specified shape and seed crystal of specified orientation | |
GB1414202A (en) | Method of manufacturing monocrystalline semiconductor bodies | |
JP2868204B2 (en) | Equipment for producing lithium tetraborate single crystal | |
SU136328A1 (en) | Method of growing silicon carbide monocrystals | |
Hasler | An apparatus for the growth of metal single crystals | |
GB806168A (en) | Improvements in or relating to the production of semi-conductor bodies | |
GB808813A (en) | Improvements in or relating to the production of semi-conductor bodies | |
JP3651855B2 (en) | Method for producing CdTe crystal | |
Orem | Growth of Preferentially Oriented Aluminum Sing Ie Crystals | |
JPS5767018A (en) | Formation of film | |
SU136564A1 (en) | Graphite crucible to obtain silicon carbide single crystals | |
JPS6168394A (en) | Production of groups iii-v polycrystal body | |
GB850595A (en) | Improvements in or relating to methods of producing single crystals | |
JPH0867593A (en) | Method for growing single crystal | |
SU147576A1 (en) | The method of obtaining single-crystal disks of large diameter |