NL209709A - - Google Patents

Info

Publication number
NL209709A
NL209709A NL209709DA NL209709A NL 209709 A NL209709 A NL 209709A NL 209709D A NL209709D A NL 209709DA NL 209709 A NL209709 A NL 209709A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL209709A publication Critical patent/NL209709A/xx

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
NL209709D 1955-08-25 NL209709A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB24510/55A GB792006A (en) 1955-08-25 1955-08-25 Improvements in or relating to the preparation of single crystals of silicon

Publications (1)

Publication Number Publication Date
NL209709A true NL209709A (xx)

Family

ID=10212792

Family Applications (2)

Application Number Title Priority Date Filing Date
NL209709D NL209709A (xx) 1955-08-25
NL105573D NL105573C (xx) 1955-08-25

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL105573D NL105573C (xx) 1955-08-25

Country Status (5)

Country Link
US (1) US2851342A (xx)
DE (1) DE1042552B (xx)
FR (1) FR1155771A (xx)
GB (1) GB792006A (xx)
NL (2) NL105573C (xx)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3330251A (en) * 1955-11-02 1967-07-11 Siemens Ag Apparatus for producing highest-purity silicon for electric semiconductor devices
NL109287C (xx) * 1955-11-02
US2975036A (en) * 1956-10-05 1961-03-14 Motorola Inc Crystal pulling apparatus
US3036892A (en) * 1958-03-05 1962-05-29 Siemens Ag Production of hyper-pure monocrystal-line rods in continuous operation
NL251143A (xx) * 1959-05-04
US3095279A (en) * 1960-04-07 1963-06-25 Tung Sol Electric Inc Apparatus for producing pure silicon
US3053635A (en) * 1960-09-26 1962-09-11 Clevite Corp Method of growing silicon carbide crystals
US3186880A (en) * 1962-10-10 1965-06-01 Martin Marietta Corp Method of producing unsupported epitaxial films of germanium by evaporating the substrate
US3277865A (en) * 1963-04-01 1966-10-11 United States Steel Corp Metal-vapor source with heated reflecting shield
US3359077A (en) * 1964-05-25 1967-12-19 Globe Union Inc Method of growing a crystal
DE1261842B (de) * 1964-12-12 1968-02-29 Siemens Ag Verfahren zum Herstellen von hochreinem Silicium
DE1521494B1 (de) * 1966-02-25 1970-11-26 Siemens Ag Vorrichtung zum Eindiffundieren von Fremdstoffen in Halbleiterkoerper

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2747971A (en) * 1953-07-20 1956-05-29 Westinghouse Electric Corp Preparation of pure crystalline silicon
US2686212A (en) * 1953-08-03 1954-08-10 Gen Electric Electric heating apparatus

Also Published As

Publication number Publication date
US2851342A (en) 1958-09-09
NL105573C (xx)
FR1155771A (fr) 1958-05-08
GB792006A (en) 1958-03-19
DE1042552B (de) 1958-11-06

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