JPS6453732A - Method for casting silicon - Google Patents
Method for casting siliconInfo
- Publication number
- JPS6453732A JPS6453732A JP21155187A JP21155187A JPS6453732A JP S6453732 A JPS6453732 A JP S6453732A JP 21155187 A JP21155187 A JP 21155187A JP 21155187 A JP21155187 A JP 21155187A JP S6453732 A JPS6453732 A JP S6453732A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- ingot
- induction coil
- column
- molten
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D11/00—Continuous casting of metals, i.e. casting in indefinite lengths
- B22D11/01—Continuous casting of metals, i.e. casting in indefinite lengths without moulds, e.g. on molten surfaces
- B22D11/015—Continuous casting of metals, i.e. casting in indefinite lengths without moulds, e.g. on molten surfaces using magnetic field for conformation, i.e. the metal is not in contact with a mould
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To obtain an ingot having good oriented crystal by holding as forming molten silicon column on the silicon ingot in an induction coil under inert gas atmosphere and cooling as descending the silicon ingot while supplying raw material silicon. CONSTITUTION:The molten silicon column 6 is formed and held on the silicon ingot 12 by electromagnetic force in the induction coil 7 under the inert gas atmosphere. The silicon ingot 12 is descended while supplying the raw material silicon 9 and the heat of the molten silicon column 6 is conducted with a cooling body 13 sequentially arranged at lower part. At the time of starting the casting, a seed ingot for silicon is inserted in the induction coil 7 and the molten silicon column 6 is initially formed on the seed ingot. By the casting with electromagnetic induction, the molten column 6 is formed without contacting with the induction coil 7 caused by resiliency between the casting product and the induction coil. As the silicon has big difference between electric resistances at the melting-state and solid-state, the exothermic phenomenon is scarcely generated at the solid part and it can sufficiently by indirectly cooling. By this method, the good oriented crystal is obtd. and the contamination is perfectly prevented and the product having good quality can be obtd.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21155187A JPS6453732A (en) | 1987-08-25 | 1987-08-25 | Method for casting silicon |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21155187A JPS6453732A (en) | 1987-08-25 | 1987-08-25 | Method for casting silicon |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6453732A true JPS6453732A (en) | 1989-03-01 |
Family
ID=16607686
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21155187A Pending JPS6453732A (en) | 1987-08-25 | 1987-08-25 | Method for casting silicon |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6453732A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1993012272A1 (en) * | 1991-12-18 | 1993-06-24 | Nobuyuki Mori | Method of and apparatus for casting crystalline silicon ingot by electron beam melting |
WO2006088037A1 (en) * | 2005-02-17 | 2006-08-24 | Sumco Solar Corporation | Silicon casting device and production method for silicon substrate |
EP2518015A1 (en) * | 2009-12-25 | 2012-10-31 | Corporation Consarc | Electromagnetic casting apparatus for silicon |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56160856A (en) * | 1980-04-11 | 1981-12-10 | Olin Mathieson | Method and device for casting material to form of thin strip |
JPS5921935A (en) * | 1982-07-28 | 1984-02-04 | Daikin Ind Ltd | Control signal transmitting device of air conditioner |
JPS6152962A (en) * | 1984-08-13 | 1986-03-15 | アメリカ合衆国 | Method and device for casting conductor or semiconductor material |
-
1987
- 1987-08-25 JP JP21155187A patent/JPS6453732A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56160856A (en) * | 1980-04-11 | 1981-12-10 | Olin Mathieson | Method and device for casting material to form of thin strip |
JPS5921935A (en) * | 1982-07-28 | 1984-02-04 | Daikin Ind Ltd | Control signal transmitting device of air conditioner |
JPS6152962A (en) * | 1984-08-13 | 1986-03-15 | アメリカ合衆国 | Method and device for casting conductor or semiconductor material |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1993012272A1 (en) * | 1991-12-18 | 1993-06-24 | Nobuyuki Mori | Method of and apparatus for casting crystalline silicon ingot by electron beam melting |
WO2006088037A1 (en) * | 2005-02-17 | 2006-08-24 | Sumco Solar Corporation | Silicon casting device and production method for silicon substrate |
JPWO2006088037A1 (en) * | 2005-02-17 | 2008-07-03 | Sumcoソーラー株式会社 | Silicon casting apparatus and silicon substrate manufacturing method |
JP4664967B2 (en) * | 2005-02-17 | 2011-04-06 | Sumcoソーラー株式会社 | Silicon casting apparatus and silicon substrate manufacturing method |
EP2518015A1 (en) * | 2009-12-25 | 2012-10-31 | Corporation Consarc | Electromagnetic casting apparatus for silicon |
EP2518015A4 (en) * | 2009-12-25 | 2013-07-03 | Consarc Corp | Electromagnetic casting apparatus for silicon |
AU2009357041B2 (en) * | 2009-12-25 | 2016-04-14 | Consarc Corporation | Electromagnetic casting apparatus for silicon |
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