JPS6433090A - Production of iii-v compound semiconductor single crystal and device thereof - Google Patents
Production of iii-v compound semiconductor single crystal and device thereofInfo
- Publication number
- JPS6433090A JPS6433090A JP18672287A JP18672287A JPS6433090A JP S6433090 A JPS6433090 A JP S6433090A JP 18672287 A JP18672287 A JP 18672287A JP 18672287 A JP18672287 A JP 18672287A JP S6433090 A JPS6433090 A JP S6433090A
- Authority
- JP
- Japan
- Prior art keywords
- temp
- electric oven
- boat
- iii
- cross
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To make the temp. distribution in a cross section optimum and to secure growth of crystal downward from the free surface and to obtain high- quality single crystal by positively cooling the upper part of an electric oven and holding the temp. difference between the upper part of the electric oven and the bottom part of a boat constant. CONSTITUTION:Melt 12 in which III-V elements are melted at a rate of chemical equivalent is formed in a boat 9 incorporated in an electric oven 3. While holding the temp. gradient formed in the lengthwise direction of the boat 9 constant, the solid-liquid interface 13 is relatively moved. In this case, the upper part of the electric oven 3 is cooled and the temp. difference between the upper part of the electric oven 3 and the bottom part of the boat 9 in the cross section in the vicinity of the interface 13 is always made constant. Thereby the optimum temp. distribution in the cross section is formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18672287A JPS6433090A (en) | 1987-07-28 | 1987-07-28 | Production of iii-v compound semiconductor single crystal and device thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18672287A JPS6433090A (en) | 1987-07-28 | 1987-07-28 | Production of iii-v compound semiconductor single crystal and device thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6433090A true JPS6433090A (en) | 1989-02-02 |
Family
ID=16193489
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18672287A Pending JPS6433090A (en) | 1987-07-28 | 1987-07-28 | Production of iii-v compound semiconductor single crystal and device thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6433090A (en) |
-
1987
- 1987-07-28 JP JP18672287A patent/JPS6433090A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1528897A (en) | Method of purifying silicon | |
KR900016508A (en) | Method and apparatus for manufacturing silicon single crystal | |
US4322263A (en) | Method for horizontal ribbon crystal growth | |
JPS6433090A (en) | Production of iii-v compound semiconductor single crystal and device thereof | |
US3261722A (en) | Process for preparing semiconductor ingots within a depression | |
JPS56149399A (en) | Liquid phase epitaxial growing method | |
JP3018738B2 (en) | Single crystal manufacturing equipment | |
JPS5645890A (en) | Crystal growing apparatus | |
JPS6453733A (en) | Method for casting silicon | |
JP2758038B2 (en) | Single crystal manufacturing equipment | |
JP2585415B2 (en) | Single crystal manufacturing equipment | |
JPS57196798A (en) | Manufacturing apparatus for beltlike silicon crystal | |
JPS6453732A (en) | Method for casting silicon | |
JPS6414189A (en) | Growing device for crystal of semiconductor | |
US4049373A (en) | Apparatus for producing compact polycrystalline InP and GaP ingots | |
JPH0380180A (en) | Device for producing single crystal | |
JPS5938184B2 (en) | Manufacturing method of saphia single crystal | |
JPS57196795A (en) | Manufacturing apparatus for beltlike silicon crystal | |
JPS62167286A (en) | Heating device | |
JP3684446B2 (en) | Method and apparatus for manufacturing semi-insulating GaAs single crystal | |
Nishizawa | Single Crystal Growing Method and Apparatus | |
JPS61136987A (en) | Vessel for growing single crystal | |
JPH0367996B2 (en) | ||
JPS6428814A (en) | Liquid epitaxial growth device | |
JPS62153184A (en) | Production of apparatus for iii-v compound semiconductor single crystal |