JPS6433090A - Production of iii-v compound semiconductor single crystal and device thereof - Google Patents

Production of iii-v compound semiconductor single crystal and device thereof

Info

Publication number
JPS6433090A
JPS6433090A JP18672287A JP18672287A JPS6433090A JP S6433090 A JPS6433090 A JP S6433090A JP 18672287 A JP18672287 A JP 18672287A JP 18672287 A JP18672287 A JP 18672287A JP S6433090 A JPS6433090 A JP S6433090A
Authority
JP
Japan
Prior art keywords
temp
electric oven
boat
iii
cross
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18672287A
Other languages
Japanese (ja)
Inventor
Masaya Onishi
Mikio Kashiwa
Michinori Wachi
Toru Kurihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP18672287A priority Critical patent/JPS6433090A/en
Publication of JPS6433090A publication Critical patent/JPS6433090A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To make the temp. distribution in a cross section optimum and to secure growth of crystal downward from the free surface and to obtain high- quality single crystal by positively cooling the upper part of an electric oven and holding the temp. difference between the upper part of the electric oven and the bottom part of a boat constant. CONSTITUTION:Melt 12 in which III-V elements are melted at a rate of chemical equivalent is formed in a boat 9 incorporated in an electric oven 3. While holding the temp. gradient formed in the lengthwise direction of the boat 9 constant, the solid-liquid interface 13 is relatively moved. In this case, the upper part of the electric oven 3 is cooled and the temp. difference between the upper part of the electric oven 3 and the bottom part of the boat 9 in the cross section in the vicinity of the interface 13 is always made constant. Thereby the optimum temp. distribution in the cross section is formed.
JP18672287A 1987-07-28 1987-07-28 Production of iii-v compound semiconductor single crystal and device thereof Pending JPS6433090A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18672287A JPS6433090A (en) 1987-07-28 1987-07-28 Production of iii-v compound semiconductor single crystal and device thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18672287A JPS6433090A (en) 1987-07-28 1987-07-28 Production of iii-v compound semiconductor single crystal and device thereof

Publications (1)

Publication Number Publication Date
JPS6433090A true JPS6433090A (en) 1989-02-02

Family

ID=16193489

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18672287A Pending JPS6433090A (en) 1987-07-28 1987-07-28 Production of iii-v compound semiconductor single crystal and device thereof

Country Status (1)

Country Link
JP (1) JPS6433090A (en)

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