JPS6453733A - Method for casting silicon - Google Patents

Method for casting silicon

Info

Publication number
JPS6453733A
JPS6453733A JP21155287A JP21155287A JPS6453733A JP S6453733 A JPS6453733 A JP S6453733A JP 21155287 A JP21155287 A JP 21155287A JP 21155287 A JP21155287 A JP 21155287A JP S6453733 A JPS6453733 A JP S6453733A
Authority
JP
Japan
Prior art keywords
ingot
silicon
raw material
induction coil
air
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21155287A
Other languages
Japanese (ja)
Inventor
Kyojiro Kaneko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Osaka Titanium Co Ltd
Original Assignee
Osaka Titanium Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osaka Titanium Co Ltd filed Critical Osaka Titanium Co Ltd
Priority to JP21155287A priority Critical patent/JPS6453733A/en
Publication of JPS6453733A publication Critical patent/JPS6453733A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D11/00—Continuous casting of metals, i.e. casting in indefinite lengths
    • B22D11/01—Continuous casting of metals, i.e. casting in indefinite lengths without moulds, e.g. on molten surfaces
    • B22D11/015—Continuous casting of metals, i.e. casting in indefinite lengths without moulds, e.g. on molten surfaces using magnetic field for conformation, i.e. the metal is not in contact with a mould

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To obtain an ingot having good oriented crystal by providing an induction coil for holding as forming molten silicon on the silicon ingot inserted at the end part, a raw material suppyling means and a drawing means for cooling silicon in an air-tight vessel under inert gas atmosphere. CONSTITUTION:The raw material supplying means 10 is arranged below a raw material charging vessel 4 in the air-tight vessel 1 and lump and granular raw material silicons 9 are supplied to the molten silicon column 6 in the induction coil 7. A resistant exothermic body 11 of graphite is arranged as possible to lift just above the induction coil 7. The water cooled jacket type cooling body 13 surrounding as approaching around the silicon ingot 12 under non- contacting state is arranged below the induction coil 7, and below the cooling body 13, the drawing means 14 for supporting the silicon ingot 12 and for drawing it downward is arranged. By this method, the ingot without containing any ingot part disturbing crystal orientation can be obtd.
JP21155287A 1987-08-25 1987-08-25 Method for casting silicon Pending JPS6453733A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21155287A JPS6453733A (en) 1987-08-25 1987-08-25 Method for casting silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21155287A JPS6453733A (en) 1987-08-25 1987-08-25 Method for casting silicon

Publications (1)

Publication Number Publication Date
JPS6453733A true JPS6453733A (en) 1989-03-01

Family

ID=16607703

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21155287A Pending JPS6453733A (en) 1987-08-25 1987-08-25 Method for casting silicon

Country Status (1)

Country Link
JP (1) JPS6453733A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4200283A1 (en) * 1991-01-08 1992-07-09 Sematech Inc Forming silicon@ wafers by spin-casting on rotating table - by forming melt of polycrystalline silicon@ granules and recrystallising using embedded seed-crystal
JP2002029727A (en) * 2000-07-21 2002-01-29 High Frequency Heattreat Co Ltd Process and device for producing silicon for solar cell
JP2009113075A (en) * 2007-11-06 2009-05-28 Mitsubishi Materials Corp Casting method, mold unit and casting apparatus
JP2010180097A (en) * 2009-02-05 2010-08-19 Tokuyama Corp Method for regenerating carbon heater used for silicon production
WO2012020463A1 (en) * 2010-08-11 2012-02-16 株式会社Sumco Electromagnetic casting apparatus for silicon

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56160856A (en) * 1980-04-11 1981-12-10 Olin Mathieson Method and device for casting material to form of thin strip
JPS5935708A (en) * 1982-08-23 1984-02-27 Babcock Hitachi Kk Nitrogen oxide suppressing combustion device
JPS6152962A (en) * 1984-08-13 1986-03-15 アメリカ合衆国 Method and device for casting conductor or semiconductor material

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56160856A (en) * 1980-04-11 1981-12-10 Olin Mathieson Method and device for casting material to form of thin strip
JPS5935708A (en) * 1982-08-23 1984-02-27 Babcock Hitachi Kk Nitrogen oxide suppressing combustion device
JPS6152962A (en) * 1984-08-13 1986-03-15 アメリカ合衆国 Method and device for casting conductor or semiconductor material

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4200283A1 (en) * 1991-01-08 1992-07-09 Sematech Inc Forming silicon@ wafers by spin-casting on rotating table - by forming melt of polycrystalline silicon@ granules and recrystallising using embedded seed-crystal
DE4200283C2 (en) * 1991-01-08 1998-01-29 Sematech Inc Method and device for centrifugal casting of silicon wafers with regrowth of silicon
JP2002029727A (en) * 2000-07-21 2002-01-29 High Frequency Heattreat Co Ltd Process and device for producing silicon for solar cell
JP2009113075A (en) * 2007-11-06 2009-05-28 Mitsubishi Materials Corp Casting method, mold unit and casting apparatus
JP2010180097A (en) * 2009-02-05 2010-08-19 Tokuyama Corp Method for regenerating carbon heater used for silicon production
WO2012020463A1 (en) * 2010-08-11 2012-02-16 株式会社Sumco Electromagnetic casting apparatus for silicon

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