JPS6453733A - Method for casting silicon - Google Patents
Method for casting siliconInfo
- Publication number
- JPS6453733A JPS6453733A JP21155287A JP21155287A JPS6453733A JP S6453733 A JPS6453733 A JP S6453733A JP 21155287 A JP21155287 A JP 21155287A JP 21155287 A JP21155287 A JP 21155287A JP S6453733 A JPS6453733 A JP S6453733A
- Authority
- JP
- Japan
- Prior art keywords
- ingot
- silicon
- raw material
- induction coil
- air
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D11/00—Continuous casting of metals, i.e. casting in indefinite lengths
- B22D11/01—Continuous casting of metals, i.e. casting in indefinite lengths without moulds, e.g. on molten surfaces
- B22D11/015—Continuous casting of metals, i.e. casting in indefinite lengths without moulds, e.g. on molten surfaces using magnetic field for conformation, i.e. the metal is not in contact with a mould
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To obtain an ingot having good oriented crystal by providing an induction coil for holding as forming molten silicon on the silicon ingot inserted at the end part, a raw material suppyling means and a drawing means for cooling silicon in an air-tight vessel under inert gas atmosphere. CONSTITUTION:The raw material supplying means 10 is arranged below a raw material charging vessel 4 in the air-tight vessel 1 and lump and granular raw material silicons 9 are supplied to the molten silicon column 6 in the induction coil 7. A resistant exothermic body 11 of graphite is arranged as possible to lift just above the induction coil 7. The water cooled jacket type cooling body 13 surrounding as approaching around the silicon ingot 12 under non- contacting state is arranged below the induction coil 7, and below the cooling body 13, the drawing means 14 for supporting the silicon ingot 12 and for drawing it downward is arranged. By this method, the ingot without containing any ingot part disturbing crystal orientation can be obtd.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21155287A JPS6453733A (en) | 1987-08-25 | 1987-08-25 | Method for casting silicon |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21155287A JPS6453733A (en) | 1987-08-25 | 1987-08-25 | Method for casting silicon |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6453733A true JPS6453733A (en) | 1989-03-01 |
Family
ID=16607703
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21155287A Pending JPS6453733A (en) | 1987-08-25 | 1987-08-25 | Method for casting silicon |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6453733A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4200283A1 (en) * | 1991-01-08 | 1992-07-09 | Sematech Inc | Forming silicon@ wafers by spin-casting on rotating table - by forming melt of polycrystalline silicon@ granules and recrystallising using embedded seed-crystal |
JP2002029727A (en) * | 2000-07-21 | 2002-01-29 | High Frequency Heattreat Co Ltd | Process and device for producing silicon for solar cell |
JP2009113075A (en) * | 2007-11-06 | 2009-05-28 | Mitsubishi Materials Corp | Casting method, mold unit and casting apparatus |
JP2010180097A (en) * | 2009-02-05 | 2010-08-19 | Tokuyama Corp | Method for regenerating carbon heater used for silicon production |
WO2012020463A1 (en) * | 2010-08-11 | 2012-02-16 | 株式会社Sumco | Electromagnetic casting apparatus for silicon |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56160856A (en) * | 1980-04-11 | 1981-12-10 | Olin Mathieson | Method and device for casting material to form of thin strip |
JPS5935708A (en) * | 1982-08-23 | 1984-02-27 | Babcock Hitachi Kk | Nitrogen oxide suppressing combustion device |
JPS6152962A (en) * | 1984-08-13 | 1986-03-15 | アメリカ合衆国 | Method and device for casting conductor or semiconductor material |
-
1987
- 1987-08-25 JP JP21155287A patent/JPS6453733A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56160856A (en) * | 1980-04-11 | 1981-12-10 | Olin Mathieson | Method and device for casting material to form of thin strip |
JPS5935708A (en) * | 1982-08-23 | 1984-02-27 | Babcock Hitachi Kk | Nitrogen oxide suppressing combustion device |
JPS6152962A (en) * | 1984-08-13 | 1986-03-15 | アメリカ合衆国 | Method and device for casting conductor or semiconductor material |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4200283A1 (en) * | 1991-01-08 | 1992-07-09 | Sematech Inc | Forming silicon@ wafers by spin-casting on rotating table - by forming melt of polycrystalline silicon@ granules and recrystallising using embedded seed-crystal |
DE4200283C2 (en) * | 1991-01-08 | 1998-01-29 | Sematech Inc | Method and device for centrifugal casting of silicon wafers with regrowth of silicon |
JP2002029727A (en) * | 2000-07-21 | 2002-01-29 | High Frequency Heattreat Co Ltd | Process and device for producing silicon for solar cell |
JP2009113075A (en) * | 2007-11-06 | 2009-05-28 | Mitsubishi Materials Corp | Casting method, mold unit and casting apparatus |
JP2010180097A (en) * | 2009-02-05 | 2010-08-19 | Tokuyama Corp | Method for regenerating carbon heater used for silicon production |
WO2012020463A1 (en) * | 2010-08-11 | 2012-02-16 | 株式会社Sumco | Electromagnetic casting apparatus for silicon |
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