JPS5560087A - Semiconductor material refining method - Google Patents

Semiconductor material refining method

Info

Publication number
JPS5560087A
JPS5560087A JP13097478A JP13097478A JPS5560087A JP S5560087 A JPS5560087 A JP S5560087A JP 13097478 A JP13097478 A JP 13097478A JP 13097478 A JP13097478 A JP 13097478A JP S5560087 A JPS5560087 A JP S5560087A
Authority
JP
Japan
Prior art keywords
semiconductor material
added
high purity
refined
impurities
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13097478A
Other languages
Japanese (ja)
Inventor
Kenzo Akita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13097478A priority Critical patent/JPS5560087A/en
Publication of JPS5560087A publication Critical patent/JPS5560087A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To obtain a high purity semiconductor material by adding a specified element to a semiconductor material having a segregation coefficient approximate to 1 after which the element-added material is zone-refined and heated to remove the element added.
CONSTITUTION: To a semiconductor material such as Si having a segregation coefficient approximate to 1 and contg. impurities such as In and Ga is added an element such as As or Sb for adjusting the coefficient to 1 or more, or 1 or less. The element-added material is zone-refined to produce a semiconductor material ingot contg. conc. impurities at both ends. After cutting off the ends the central part is hermetically sealed in a high purity quartz ampul, which is then heated to a predetermined high temp. in a heating furnace to evaporate the added element by means of the difference in vapor press. between the material and the element. This vapor is cooled to condensation-remove the element. By this method a high purity semiconductor material excellent in carrier concn., etc. is obtd.
COPYRIGHT: (C)1980,JPO&Japio
JP13097478A 1978-10-26 1978-10-26 Semiconductor material refining method Pending JPS5560087A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13097478A JPS5560087A (en) 1978-10-26 1978-10-26 Semiconductor material refining method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13097478A JPS5560087A (en) 1978-10-26 1978-10-26 Semiconductor material refining method

Publications (1)

Publication Number Publication Date
JPS5560087A true JPS5560087A (en) 1980-05-06

Family

ID=15046946

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13097478A Pending JPS5560087A (en) 1978-10-26 1978-10-26 Semiconductor material refining method

Country Status (1)

Country Link
JP (1) JPS5560087A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6051688A (en) * 1983-08-29 1985-03-23 Nippon Hoso Kyokai <Nhk> Segregating method of impurity

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6051688A (en) * 1983-08-29 1985-03-23 Nippon Hoso Kyokai <Nhk> Segregating method of impurity
JPH0377156B2 (en) * 1983-08-29 1991-12-09 Japan Broadcasting Corp

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