JPS5711815A - Preparation of high purity silicon - Google Patents
Preparation of high purity siliconInfo
- Publication number
- JPS5711815A JPS5711815A JP8464980A JP8464980A JPS5711815A JP S5711815 A JPS5711815 A JP S5711815A JP 8464980 A JP8464980 A JP 8464980A JP 8464980 A JP8464980 A JP 8464980A JP S5711815 A JPS5711815 A JP S5711815A
- Authority
- JP
- Japan
- Prior art keywords
- alf
- high purity
- product
- acid
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052710 silicon Inorganic materials 0.000 title abstract 5
- 239000010703 silicon Substances 0.000 title abstract 2
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminium flouride Chemical compound F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 abstract 8
- 239000002253 acid Substances 0.000 abstract 3
- 239000000047 product Substances 0.000 abstract 3
- 239000003513 alkali Substances 0.000 abstract 2
- 230000008018 melting Effects 0.000 abstract 2
- 238000002844 melting Methods 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- 239000012266 salt solution Substances 0.000 abstract 2
- 230000008022 sublimation Effects 0.000 abstract 2
- 238000000859 sublimation Methods 0.000 abstract 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 abstract 1
- 229910004883 Na2SiF6 Inorganic materials 0.000 abstract 1
- 229910052783 alkali metal Inorganic materials 0.000 abstract 1
- 150000001340 alkali metals Chemical class 0.000 abstract 1
- 239000006227 byproduct Substances 0.000 abstract 1
- 230000005496 eutectics Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 150000003839 salts Chemical class 0.000 abstract 1
Landscapes
- Silicon Compounds (AREA)
Abstract
PURPOSE: To prepare high purity silicon with simple procedures, economically, by melting a mixture of an alkali metal silicofluoride and metallic Al at a temperature above a specific temperature and below the eutectic point of Si and Al, and then removing the unreacted material and by-products.
CONSTITUTION: 3 Moles of an alkali silicofluoride (e.g. Na2SiF6) is mixed with 2W6mol of metallic Al, and the mixture is molten at a temperature above 400°C and below the eutective point of Si and Al (575°C). The melting is pref. carried out under reduced pressure or in an inert gas atmosphere (e.g. Ar) to prevent the oxidation of Al and Si. When AlF3 is absent in the product, Si can be separated only by easily dissolving the alkali fluoride and the fluoroaluminic acid salt with an acid or a salt solution. When AlF3 is present in the product, high purity Si can be recovered by treating the product with an acid or a salt solution, and heating the residue at or above the sublimation temperature of AlF3 (1,200°C) to effect the sublimation of AlF3.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8464980A JPS5711815A (en) | 1980-06-24 | 1980-06-24 | Preparation of high purity silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8464980A JPS5711815A (en) | 1980-06-24 | 1980-06-24 | Preparation of high purity silicon |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5711815A true JPS5711815A (en) | 1982-01-21 |
| JPS6332725B2 JPS6332725B2 (en) | 1988-07-01 |
Family
ID=13836546
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8464980A Granted JPS5711815A (en) | 1980-06-24 | 1980-06-24 | Preparation of high purity silicon |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5711815A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4525334A (en) * | 1983-03-24 | 1985-06-25 | Bayer Aktiengesellschaft | Process for the production of silicon |
| JPH0218228A (en) * | 1988-07-06 | 1990-01-22 | Nittetsu Mining Co Ltd | Method of preventing dust scattering in belt conveyor transportation system and device thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103395785B (en) * | 2013-07-18 | 2014-12-31 | 贵州省产品质量监督检验院 | Method for preparing polycrystalline silicon by reducing sodium fluosilicate with sodium |
-
1980
- 1980-06-24 JP JP8464980A patent/JPS5711815A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4525334A (en) * | 1983-03-24 | 1985-06-25 | Bayer Aktiengesellschaft | Process for the production of silicon |
| JPH0218228A (en) * | 1988-07-06 | 1990-01-22 | Nittetsu Mining Co Ltd | Method of preventing dust scattering in belt conveyor transportation system and device thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6332725B2 (en) | 1988-07-01 |
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