GB885323A - Improvements in or relating to apparatus and a method for purifying and/or endowing with an impurity a semi-conducting material - Google Patents
Improvements in or relating to apparatus and a method for purifying and/or endowing with an impurity a semi-conducting materialInfo
- Publication number
- GB885323A GB885323A GB839058A GB839058A GB885323A GB 885323 A GB885323 A GB 885323A GB 839058 A GB839058 A GB 839058A GB 839058 A GB839058 A GB 839058A GB 885323 A GB885323 A GB 885323A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- endowing
- purifying
- impurity
- relating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
- C30B13/285—Crystal holders, e.g. chucks
Abstract
Semi-conductor material 13 is purified and/or doped in an evacuated envelope 1 having two interconnected portions 2 and 3, by causing a molten zone 16 to travel through the material 13 while maintaining portion 3 at a lower temperature <PICT:0885323/III/1> than portion 2. Portion 2 is heated by a heating element 5 in the walls of a container 4 surrounding it; portion 3 is kept at a constant temperature by a bath of liquid 7; and zone 16 is melted by a heating coil 8 movable axially of the envelope 1. Impurities in the material 13, which may be silicon, are vapourized as the molten zone 16 is passed through the material, and are condensed in the cooler portion 3. When doping substance is to be added to the material 13, the substance 9, which may be phosphorus, is evaporated in portion 3. The material 13 may be purified and doped simultaneously. The crystal obtained is grown on a seed 12.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DET13361A DE1040799B (en) | 1957-03-15 | 1957-03-15 | Arrangement for high cleaning and / or doping of a semiconductor body |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB885323A true GB885323A (en) | 1961-12-28 |
Family
ID=7547312
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB839058A Expired GB885323A (en) | 1957-03-15 | 1958-03-17 | Improvements in or relating to apparatus and a method for purifying and/or endowing with an impurity a semi-conducting material |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE1040799B (en) |
| GB (1) | GB885323A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL254549A (en) * | 1959-08-07 | |||
| DE1165882B (en) * | 1960-02-05 | 1964-03-19 | Philips Patentverwaltung | Device for executing rotary movements on rod-shaped bodies, in particular on semiconductor bodies |
-
1957
- 1957-03-15 DE DET13361A patent/DE1040799B/en active Pending
-
1958
- 1958-03-17 GB GB839058A patent/GB885323A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1040799B (en) | 1958-10-09 |
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