JPS5711816A - Preparation of silicon thin belt - Google Patents

Preparation of silicon thin belt

Info

Publication number
JPS5711816A
JPS5711816A JP8608980A JP8608980A JPS5711816A JP S5711816 A JPS5711816 A JP S5711816A JP 8608980 A JP8608980 A JP 8608980A JP 8608980 A JP8608980 A JP 8608980A JP S5711816 A JPS5711816 A JP S5711816A
Authority
JP
Japan
Prior art keywords
thin belt
silicon
cooled
silicon thin
room temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8608980A
Other languages
Japanese (ja)
Inventor
Ryohei Kuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Priority to JP8608980A priority Critical patent/JPS5711816A/en
Publication of JPS5711816A publication Critical patent/JPS5711816A/en
Pending legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)

Abstract

PURPOSE: To obtain a silicon thin belt having extremely improved mobility of especially carrier and life time, by bringing molten silicon jetting from a nozzle into contact with a cooling body, followed by heat-treating it before it is cooled to room temperature.
CONSTITUTION: A silicon melt having a temperature ≥ the melting point (in the case of high-purity silicon, ≥1,420°C under atmospheric pressure) of molten parent material, about not higher than 200°C from the above-mentioned temperature is jetted from a nozzle preferably in an inert gas atmosphere. The jetted silicon melt is instantly brought into contact with the surface of a cooling body, cooled, solidifed, and formed into thin belt by itself. The silicon thin belt is heat-treated before it is cooled to room temperature during its cooling process after solidification. In the operation, the heat treatment is preferably carried out before at least one side of the solidified thin belt faces is cooled to 100°C. After the heat treatment is over, the silicon thin belt is cooled to room temperature, to give the silicon thin belt having extremely improved surface smoothness of the thin belt and stabilized dimension.
COPYRIGHT: (C)1982,JPO&Japio
JP8608980A 1980-06-25 1980-06-25 Preparation of silicon thin belt Pending JPS5711816A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8608980A JPS5711816A (en) 1980-06-25 1980-06-25 Preparation of silicon thin belt

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8608980A JPS5711816A (en) 1980-06-25 1980-06-25 Preparation of silicon thin belt

Publications (1)

Publication Number Publication Date
JPS5711816A true JPS5711816A (en) 1982-01-21

Family

ID=13876976

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8608980A Pending JPS5711816A (en) 1980-06-25 1980-06-25 Preparation of silicon thin belt

Country Status (1)

Country Link
JP (1) JPS5711816A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02286474A (en) * 1989-04-28 1990-11-26 Kinugawa Rubber Ind Co Ltd Mudguard for automobile

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02286474A (en) * 1989-04-28 1990-11-26 Kinugawa Rubber Ind Co Ltd Mudguard for automobile

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