JPS55126528A - Production of silicon thin strip - Google Patents
Production of silicon thin stripInfo
- Publication number
- JPS55126528A JPS55126528A JP3435979A JP3435979A JPS55126528A JP S55126528 A JPS55126528 A JP S55126528A JP 3435979 A JP3435979 A JP 3435979A JP 3435979 A JP3435979 A JP 3435979A JP S55126528 A JPS55126528 A JP S55126528A
- Authority
- JP
- Japan
- Prior art keywords
- rolls
- thin strip
- melt
- steps
- twin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Press-Shaping Or Shaping Using Conveyers (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To obtain a silicon thin strip with a raised carrier transfer rate and an elongated lifetime by passing molten silicon between twin rolls vertically arranged in a plurality of steps or between one or more steps of twin rolls which are rotary rolls with different surface temps. to cool the molten silicon.
CONSTITUTION: Silicon melt 3 is spouted from the lower nozzle of melting furnace 2 in the arrow b direction. Twin rolls composed of a pair of rotary rolls 41, 41' and 43, 43' rotating oppositely are arranged in two steps in the arrow b direction, and by being passed between the rolls melt 3 is cooled to produce a thin strip. One step of twin rolls may be set. In this case rotary rolls 45, 45' are made different in surface temp., and melt 3 is passed between the rolls to produce a thin strip. The grain size of the resulting thin strip is made uniform in the surface layer and the central interior, so the strip has a raised carrier transfer rate and an elongated lifetime.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3435979A JPS55126528A (en) | 1979-03-26 | 1979-03-26 | Production of silicon thin strip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3435979A JPS55126528A (en) | 1979-03-26 | 1979-03-26 | Production of silicon thin strip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55126528A true JPS55126528A (en) | 1980-09-30 |
Family
ID=12411959
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3435979A Pending JPS55126528A (en) | 1979-03-26 | 1979-03-26 | Production of silicon thin strip |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55126528A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4468281A (en) * | 1982-12-27 | 1984-08-28 | Atlantic Richfield Company | Silicon ribbon growth wheel and method for heat flow control therein |
| US4468280A (en) * | 1982-12-27 | 1984-08-28 | Atlantic Richfield Company | Silicon ribbon growth wheel and method for surface temperature profiling thereof |
| US7888158B1 (en) | 2009-07-21 | 2011-02-15 | Sears Jr James B | System and method for making a photovoltaic unit |
| WO2014058698A1 (en) * | 2012-10-09 | 2014-04-17 | Corning Incorporated | Sheet of semiconducting material, system for forming same, and method of forming same |
-
1979
- 1979-03-26 JP JP3435979A patent/JPS55126528A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4468281A (en) * | 1982-12-27 | 1984-08-28 | Atlantic Richfield Company | Silicon ribbon growth wheel and method for heat flow control therein |
| US4468280A (en) * | 1982-12-27 | 1984-08-28 | Atlantic Richfield Company | Silicon ribbon growth wheel and method for surface temperature profiling thereof |
| US7888158B1 (en) | 2009-07-21 | 2011-02-15 | Sears Jr James B | System and method for making a photovoltaic unit |
| WO2014058698A1 (en) * | 2012-10-09 | 2014-04-17 | Corning Incorporated | Sheet of semiconducting material, system for forming same, and method of forming same |
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