JPS57134235A - Production of polycrystalline silicon semiconductor - Google Patents

Production of polycrystalline silicon semiconductor

Info

Publication number
JPS57134235A
JPS57134235A JP1742181A JP1742181A JPS57134235A JP S57134235 A JPS57134235 A JP S57134235A JP 1742181 A JP1742181 A JP 1742181A JP 1742181 A JP1742181 A JP 1742181A JP S57134235 A JPS57134235 A JP S57134235A
Authority
JP
Japan
Prior art keywords
polycrystalline
molds
ingot
production
silicon nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1742181A
Other languages
Japanese (ja)
Other versions
JPS609656B2 (en
Inventor
Akio Shimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP1742181A priority Critical patent/JPS609656B2/en
Publication of JPS57134235A publication Critical patent/JPS57134235A/en
Publication of JPS609656B2 publication Critical patent/JPS609656B2/en
Expired legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22C—FOUNDRY MOULDING
    • B22C3/00—Selection of compositions for coating the surfaces of moulds, cores, or patterns

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mold Materials And Core Materials (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To make the production of polycrystalline Si of large crystal grains possible in the production of a polycrystalline semiconductor by coating a mold release agent of silicon nitride on the inside surface of molds which are divided longitudinally, and producing melt of high purity Si. CONSTITUTION:A mold made of quartz and silicon nitride is made dividable longitudinally to >=2 parts, and powder of silicon nitride is coated uniformly as a mold release agent on the inside surfaces thereof. This split molds are put into a graphite crucible and while they are heated therein, high purity Si is put into the split molds and melted, after which it is cooled slowly in the molds, so that it is solidified to a polycrystalline Si ingot of large crystal grains. The molds are removed from the graphite crucible, and are divided, then, the polycrystalline Si ingot is removed therefrom. The perfect polycrystalline Si ingot is obtained easily without generating cracks in the polycrystalline Si ingot.
JP1742181A 1981-02-10 1981-02-10 Method for manufacturing polycrystalline silicon semiconductor Expired JPS609656B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1742181A JPS609656B2 (en) 1981-02-10 1981-02-10 Method for manufacturing polycrystalline silicon semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1742181A JPS609656B2 (en) 1981-02-10 1981-02-10 Method for manufacturing polycrystalline silicon semiconductor

Publications (2)

Publication Number Publication Date
JPS57134235A true JPS57134235A (en) 1982-08-19
JPS609656B2 JPS609656B2 (en) 1985-03-12

Family

ID=11943541

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1742181A Expired JPS609656B2 (en) 1981-02-10 1981-02-10 Method for manufacturing polycrystalline silicon semiconductor

Country Status (1)

Country Link
JP (1) JPS609656B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6149416A (en) * 1984-08-17 1986-03-11 Hoxan Corp Coating method of carbon tray for manufacturing polycrystalline silicon wafer
JPH0484467A (en) * 1990-07-27 1992-03-17 Mitsubishi Electric Corp Manufacture of solar cell
US20100290946A1 (en) * 2009-05-14 2010-11-18 Glen Bennett Cook Methods of making an article of semiconducting material on a mold comprising semiconducting material

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6149416A (en) * 1984-08-17 1986-03-11 Hoxan Corp Coating method of carbon tray for manufacturing polycrystalline silicon wafer
JPH038579B2 (en) * 1984-08-17 1991-02-06 Hokusan Kk
JPH0484467A (en) * 1990-07-27 1992-03-17 Mitsubishi Electric Corp Manufacture of solar cell
US20100290946A1 (en) * 2009-05-14 2010-11-18 Glen Bennett Cook Methods of making an article of semiconducting material on a mold comprising semiconducting material
US8398768B2 (en) * 2009-05-14 2013-03-19 Corning Incorporated Methods of making an article of semiconducting material on a mold comprising semiconducting material

Also Published As

Publication number Publication date
JPS609656B2 (en) 1985-03-12

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