GB964420A - Improvements in or relating to silicon ingots of high purity and to a process and an apparatus for the production thereof - Google Patents
Improvements in or relating to silicon ingots of high purity and to a process and an apparatus for the production thereofInfo
- Publication number
- GB964420A GB964420A GB3535160A GB3535160A GB964420A GB 964420 A GB964420 A GB 964420A GB 3535160 A GB3535160 A GB 3535160A GB 3535160 A GB3535160 A GB 3535160A GB 964420 A GB964420 A GB 964420A
- Authority
- GB
- United Kingdom
- Prior art keywords
- container
- centre
- brought
- quartz
- ingot
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Abstract
A silicon ingot is formed in a silica container having an outer coating which causes disintegration of the container during solidification of the ingot. The coating, which may be solid or liquid, may contain an alkali or alkaline earth metal acid fluoride, fluosilicate, or sulphate and/or hydrofluoric, fluosilicic or sulphuric acid. An aqueous paste containing equal parts by weight of sodium fluosilicate and sodium acid sulphate is specified. The container may be of transparent or opaque quartz, or may comprise an inner layer of transparent quartz and an outer layer of opaque quartz. The resulting ingot may be sanded and rinsed in water and the top of the ingot, which contains <PICT:0964420/C1/1> segregated impurities, cut off. The silicon treated may have a resistivity of 200 ohm-cm. and the product may have a resistivity of as low as 60 ohm-cm. and a purity of 99.9%, the resistivity being determined on a single crystal drawn in vacuo. As shown, a quartz container 1, having an inner quartz cover 4, an outer graphite cover 5, and a paste coating 3, is situated in a graphite container 6 having a collar 8 and a support comprising members 9 and 10, the latter being replaceable. The graphite container is surrounded by an induction heating coil 11 in an insulated casing 12 having a lower extension 13. The arrangement of induction coil and insulation is vertically movable by means of an arrangement of ropes and pulleys and a variable speed motor. Before introduction of the charge, the centre of the induction furnace is brought in line with the bottom of the graphite container, which is thereby brought to a temperature of 1500 DEG C. When the initial charge has been melted, the centre of the furnace is brought in line with the centre of the silica container. When the whole charge has been melted, the centre of the furnace is brought in line with the surface of the molten silicon for a period and is then lowered to the original position for a further period.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR807545A FR1246889A (en) | 1959-10-15 | 1959-10-15 | Process for obtaining very pure silicon ingots |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB964420A true GB964420A (en) | 1964-07-22 |
Family
ID=8720150
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3535160A Expired GB964420A (en) | 1959-10-15 | 1960-10-14 | Improvements in or relating to silicon ingots of high purity and to a process and an apparatus for the production thereof |
Country Status (5)
| Country | Link |
|---|---|
| BE (1) | BE595995A (en) |
| DE (1) | DE1121596B (en) |
| ES (1) | ES261651A1 (en) |
| FR (1) | FR1246889A (en) |
| GB (1) | GB964420A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2928089C3 (en) * | 1979-07-12 | 1982-03-04 | Heraeus Quarzschmelze Gmbh, 6450 Hanau | Composite crucibles for semiconductor technology purposes and processes for production |
| FR2546912B1 (en) * | 1983-06-06 | 1987-07-10 | Commissariat Energie Atomique | METHOD AND DEVICE FOR PRODUCING A SINGLE CRYSTAL |
| US5064497A (en) * | 1990-03-09 | 1991-11-12 | At&T Bell Laboratories | Crystal growth method and apparatus |
-
1959
- 1959-10-15 FR FR807545A patent/FR1246889A/en not_active Expired
-
1960
- 1960-10-13 BE BE595995A patent/BE595995A/en unknown
- 1960-10-13 ES ES0261651A patent/ES261651A1/en not_active Expired
- 1960-10-14 GB GB3535160A patent/GB964420A/en not_active Expired
- 1960-10-14 DE DE1960P0025852 patent/DE1121596B/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| ES261651A1 (en) | 1961-05-16 |
| BE595995A (en) | 1961-04-13 |
| FR1246889A (en) | 1960-11-25 |
| DE1121596B (en) | 1962-01-11 |
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