FR2950046B1 - Dispositif a basse pression de fusion et purification de silicium et procede de fusion/purification/solidification - Google Patents

Dispositif a basse pression de fusion et purification de silicium et procede de fusion/purification/solidification

Info

Publication number
FR2950046B1
FR2950046B1 FR0904387A FR0904387A FR2950046B1 FR 2950046 B1 FR2950046 B1 FR 2950046B1 FR 0904387 A FR0904387 A FR 0904387A FR 0904387 A FR0904387 A FR 0904387A FR 2950046 B1 FR2950046 B1 FR 2950046B1
Authority
FR
France
Prior art keywords
solidifying
purifying
melting
low pressure
fusion device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0904387A
Other languages
English (en)
Other versions
FR2950046A1 (fr
Inventor
Jed Kraiem
Roland Einhaus
Hubert Lauvray
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Apollon Solar SAS
Original Assignee
Apollon Solar SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Apollon Solar SAS filed Critical Apollon Solar SAS
Priority to FR0904387A priority Critical patent/FR2950046B1/fr
Priority to US13/496,394 priority patent/US20120178036A1/en
Priority to PCT/FR2010/000617 priority patent/WO2011033188A1/fr
Publication of FR2950046A1 publication Critical patent/FR2950046A1/fr
Application granted granted Critical
Publication of FR2950046B1 publication Critical patent/FR2950046B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J6/00—Heat treatments such as Calcining; Fusing ; Pyrolysis
    • B01J6/005—Fusing
    • B01J6/007—Fusing in crucibles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/007—Mechanisms for moving either the charge or the heater
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
FR0904387A 2009-09-15 2009-09-15 Dispositif a basse pression de fusion et purification de silicium et procede de fusion/purification/solidification Expired - Fee Related FR2950046B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR0904387A FR2950046B1 (fr) 2009-09-15 2009-09-15 Dispositif a basse pression de fusion et purification de silicium et procede de fusion/purification/solidification
US13/496,394 US20120178036A1 (en) 2009-09-15 2010-09-10 Low pressure device for melting and purifying silicon and melting/purifying/solidifying method
PCT/FR2010/000617 WO2011033188A1 (fr) 2009-09-15 2010-09-10 Dispositif à basse pression de fusion et purification de silicium et procédé de fusion/purification/solidification

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0904387A FR2950046B1 (fr) 2009-09-15 2009-09-15 Dispositif a basse pression de fusion et purification de silicium et procede de fusion/purification/solidification

Publications (2)

Publication Number Publication Date
FR2950046A1 FR2950046A1 (fr) 2011-03-18
FR2950046B1 true FR2950046B1 (fr) 2011-11-25

Family

ID=42167528

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0904387A Expired - Fee Related FR2950046B1 (fr) 2009-09-15 2009-09-15 Dispositif a basse pression de fusion et purification de silicium et procede de fusion/purification/solidification

Country Status (3)

Country Link
US (1) US20120178036A1 (fr)
FR (1) FR2950046B1 (fr)
WO (1) WO2011033188A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102730698A (zh) * 2012-07-16 2012-10-17 日鑫（永安）硅材料有限公司 物理法制备太阳能硅湿法过程的滤洗器

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2984868B1 (fr) 2011-12-27 2014-08-22 Commissariat Energie Atomique Procede et dispositif de purification du silicium
FR2985722B1 (fr) * 2012-01-13 2014-02-14 Commissariat Energie Atomique Procede de purification du silicium.
US20130189633A1 (en) * 2012-01-19 2013-07-25 General Electric Company Method for removing organic contaminants from boron containing powders by high temperature processing
CN103014850A (zh) * 2012-12-10 2013-04-03 常州大学 一种新型多晶硅铸锭装置及其铸锭方法
CN114100184A (zh) * 2021-12-02 2022-03-01 上海氢田新材料科技有限公司 一种用于耐高温材料的催化剂去除装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1103329A (en) * 1964-09-15 1968-02-14 Gen Trustee Co Ltd Refining of silicon
DE3802531A1 (de) * 1988-01-28 1989-08-17 Siemens Ag Verfahren zum abtrennen von festen partikeln aus siliziumschmelzen
JP3205352B2 (ja) * 1990-05-30 2001-09-04 川崎製鉄株式会社 シリコン精製方法及び装置
JP4856973B2 (ja) * 2005-03-07 2012-01-18 新日鉄マテリアルズ株式会社 高純度シリコンの製造方法
JP5100978B2 (ja) * 2005-05-10 2012-12-19 新日鉄住金マテリアルズ株式会社 シリコンの脱リン精製装置及び方法
JP4689373B2 (ja) * 2005-07-04 2011-05-25 シャープ株式会社 シリコンの再利用方法
US7682585B2 (en) * 2006-04-25 2010-03-23 The Arizona Board Of Regents On Behalf Of The University Of Arizona Silicon refining process
FR2909990B1 (fr) * 2006-12-13 2009-03-13 Efd Induction Sa Sa Procede et installation de fabrication de blocs d'un materiau semiconducteur
JP5222713B2 (ja) * 2008-12-24 2013-06-26 昭和電工株式会社 ケイ素の精製方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102730698A (zh) * 2012-07-16 2012-10-17 日鑫（永安）硅材料有限公司 物理法制备太阳能硅湿法过程的滤洗器

Also Published As

Publication number Publication date
FR2950046A1 (fr) 2011-03-18
US20120178036A1 (en) 2012-07-12
WO2011033188A1 (fr) 2011-03-24

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Effective date: 20150529