HK1041029A1 - 用於一個外延反應器的反應腔 - Google Patents

用於一個外延反應器的反應腔

Info

Publication number
HK1041029A1
HK1041029A1 HK02102746.1A HK02102746A HK1041029A1 HK 1041029 A1 HK1041029 A1 HK 1041029A1 HK 02102746 A HK02102746 A HK 02102746A HK 1041029 A1 HK1041029 A1 HK 1041029A1
Authority
HK
Hong Kong
Prior art keywords
epitaxial reactor
reaction chamber
belljar
insulating
chemically resistant
Prior art date
Application number
HK02102746.1A
Other languages
English (en)
Inventor
弗蘭克‧普勒提
溫琴佐‧奧格裡亞裡
朱塞佩‧塔倫茲
Original Assignee
Lpe公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lpe公司 filed Critical Lpe公司
Publication of HK1041029A1 publication Critical patent/HK1041029A1/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
HK02102746.1A 1999-03-25 2002-04-11 用於一個外延反應器的反應腔 HK1041029A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IT1999MI000607A IT1312150B1 (it) 1999-03-25 1999-03-25 Perfezionata camera di reazione per reattore epitassiale
PCT/EP2000/002364 WO2000058533A1 (en) 1999-03-25 2000-03-17 Reaction chamber for an epitaxial reactor

Publications (1)

Publication Number Publication Date
HK1041029A1 true HK1041029A1 (zh) 2002-06-28

Family

ID=11382429

Family Applications (1)

Application Number Title Priority Date Filing Date
HK02102746.1A HK1041029A1 (zh) 1999-03-25 2002-04-11 用於一個外延反應器的反應腔

Country Status (13)

Country Link
US (1) US7314526B1 (zh)
EP (1) EP1173632B1 (zh)
JP (1) JP2002540642A (zh)
KR (1) KR100724876B1 (zh)
CN (1) CN1255582C (zh)
AT (1) ATE252655T1 (zh)
DE (1) DE60006095T2 (zh)
DK (1) DK1173632T3 (zh)
ES (1) ES2207499T3 (zh)
HK (1) HK1041029A1 (zh)
IT (1) IT1312150B1 (zh)
PT (1) PT1173632E (zh)
WO (1) WO2000058533A1 (zh)

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US9954136B2 (en) 2016-08-03 2018-04-24 Tesla, Inc. Cassette optimized for an inline annealing system
US10115856B2 (en) 2016-10-31 2018-10-30 Tesla, Inc. System and method for curing conductive paste using induction heating
US20180340052A1 (en) * 2017-05-24 2018-11-29 Garlock Sealing Technologies, Llc Biaxial ptfe gasket material with high purity filler
US11670490B2 (en) * 2017-09-29 2023-06-06 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit fabrication system with adjustable gas injector
CN117187785B (zh) * 2023-11-08 2024-02-23 新美光(苏州)半导体科技有限公司 一种化学气相沉积装置及方法

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Also Published As

Publication number Publication date
DE60006095D1 (de) 2003-11-27
KR100724876B1 (ko) 2007-06-04
KR20010102336A (ko) 2001-11-15
DE60006095T2 (de) 2004-08-19
WO2000058533A1 (en) 2000-10-05
CN1327490A (zh) 2001-12-19
ES2207499T3 (es) 2004-06-01
CN1255582C (zh) 2006-05-10
EP1173632A1 (en) 2002-01-23
EP1173632B1 (en) 2003-10-22
US7314526B1 (en) 2008-01-01
PT1173632E (pt) 2004-03-31
DK1173632T3 (da) 2004-03-01
ATE252655T1 (de) 2003-11-15
JP2002540642A (ja) 2002-11-26
ITMI990607A1 (it) 2000-09-25
IT1312150B1 (it) 2002-04-09

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