ATE394789T1 - Behandlungsvorrichtungen - Google Patents

Behandlungsvorrichtungen

Info

Publication number
ATE394789T1
ATE394789T1 AT00978613T AT00978613T ATE394789T1 AT E394789 T1 ATE394789 T1 AT E394789T1 AT 00978613 T AT00978613 T AT 00978613T AT 00978613 T AT00978613 T AT 00978613T AT E394789 T1 ATE394789 T1 AT E394789T1
Authority
AT
Austria
Prior art keywords
plasma processing
processing chamber
chamber
plasma
disclosed
Prior art date
Application number
AT00978613T
Other languages
English (en)
Inventor
Andrew Bailey
Alan Schoepp
David Hemker
Mark Wilcoxson
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Application granted granted Critical
Publication of ATE394789T1 publication Critical patent/ATE394789T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/62—Plasma-deposition of organic layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Glass Compositions (AREA)
  • Chemical Treatment Of Metals (AREA)
  • Materials For Photolithography (AREA)
  • Chemical Vapour Deposition (AREA)
  • Arc Welding In General (AREA)
AT00978613T 1999-11-15 2000-11-14 Behandlungsvorrichtungen ATE394789T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US44079499A 1999-11-15 1999-11-15

Publications (1)

Publication Number Publication Date
ATE394789T1 true ATE394789T1 (de) 2008-05-15

Family

ID=23750210

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00978613T ATE394789T1 (de) 1999-11-15 2000-11-14 Behandlungsvorrichtungen

Country Status (10)

Country Link
US (2) US20040011467A1 (de)
EP (1) EP1230664B1 (de)
JP (1) JP2003514388A (de)
KR (1) KR100751740B1 (de)
CN (1) CN1251293C (de)
AT (1) ATE394789T1 (de)
AU (1) AU1606101A (de)
DE (1) DE60038811D1 (de)
TW (1) TW494434B (de)
WO (1) WO2001037314A1 (de)

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JP6373707B2 (ja) * 2014-09-30 2018-08-15 株式会社Ｓｃｒｅｅｎホールディングス プラズマ処理装置
KR101673240B1 (ko) * 2014-11-13 2016-11-07 주식회사 에이치시티엠 모바일 기기용 영구자석 구조물
CN104505327B (zh) * 2014-12-19 2018-03-27 中国科学院嘉兴微电子仪器与设备工程中心 一种应用于等离子体设备的腔室结构及等离子体设备
KR102496037B1 (ko) 2016-01-20 2023-02-06 삼성전자주식회사 플라즈마 식각 방법 및 장치
JP6788680B2 (ja) * 2016-09-28 2020-11-25 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
CN110536530A (zh) * 2018-09-20 2019-12-03 北京北方华创微电子装备有限公司 磁增强法拉第屏蔽结构及感应耦合等离子体源
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Also Published As

Publication number Publication date
US20060011583A1 (en) 2006-01-19
DE60038811D1 (de) 2008-06-19
KR20020053080A (ko) 2002-07-04
CN1423824A (zh) 2003-06-11
AU1606101A (en) 2001-05-30
US20040011467A1 (en) 2004-01-22
EP1230664B1 (de) 2008-05-07
TW494434B (en) 2002-07-11
EP1230664A1 (de) 2002-08-14
KR100751740B1 (ko) 2007-08-24
CN1251293C (zh) 2006-04-12
JP2003514388A (ja) 2003-04-15
WO2001037314A1 (en) 2001-05-25

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