FR2567921B1 - Perfectionnements aux reacteurs epitaxiques - Google Patents

Perfectionnements aux reacteurs epitaxiques

Info

Publication number
FR2567921B1
FR2567921B1 FR8510992A FR8510992A FR2567921B1 FR 2567921 B1 FR2567921 B1 FR 2567921B1 FR 8510992 A FR8510992 A FR 8510992A FR 8510992 A FR8510992 A FR 8510992A FR 2567921 B1 FR2567921 B1 FR 2567921B1
Authority
FR
France
Prior art keywords
epitaxic
reactors
epitaxic reactors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8510992A
Other languages
English (en)
French (fr)
Other versions
FR2567921A1 (fr
Inventor
Vittorio Pozzetti
Frano Preti
Piergiovanni Poggi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LPE SpA
Original Assignee
LPE SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LPE SpA filed Critical LPE SpA
Publication of FR2567921A1 publication Critical patent/FR2567921A1/fr
Application granted granted Critical
Publication of FR2567921B1 publication Critical patent/FR2567921B1/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR8510992A 1984-07-19 1985-07-18 Perfectionnements aux reacteurs epitaxiques Expired FR2567921B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8421960A IT1209570B (it) 1984-07-19 1984-07-19 Perfezionamento nei reattori epitassiali.

Publications (2)

Publication Number Publication Date
FR2567921A1 FR2567921A1 (fr) 1986-01-24
FR2567921B1 true FR2567921B1 (fr) 1988-04-15

Family

ID=11189425

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8510992A Expired FR2567921B1 (fr) 1984-07-19 1985-07-18 Perfectionnements aux reacteurs epitaxiques

Country Status (6)

Country Link
JP (1) JPH0644557B2 (it)
CH (1) CH666140A5 (it)
DE (1) DE3525870A1 (it)
FR (1) FR2567921B1 (it)
IT (1) IT1209570B (it)
NL (1) NL8502087A (it)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1215444B (it) * 1987-04-24 1990-02-14 L P E S P A Perfezionamenti ad induttori e suscettori impiegabili in reattori epitassiali.
JPS636725U (it) * 1986-07-01 1988-01-18
DE3827506C1 (en) * 1988-08-12 1990-01-11 Marino 8011 Baldham De Pradetto Device and method for epitaxial deposition of especially semiconductor material onto silicon wafers from the gaseous state
IT1392068B1 (it) * 2008-11-24 2012-02-09 Lpe Spa Camera di reazione di un reattore epitassiale

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3424298A (en) * 1967-03-22 1969-01-28 Price Wilson Ltd Price Wilson Ammunition holder
US3699398A (en) * 1971-10-12 1972-10-17 Reed A Newmeyer Sensor for vehicular traffic counters
DD96852A1 (it) * 1972-05-09 1973-04-12
US4284867A (en) * 1979-02-09 1981-08-18 General Instrument Corporation Chemical vapor deposition reactor with infrared reflector
US4322592A (en) * 1980-08-22 1982-03-30 Rca Corporation Susceptor for heating semiconductor substrates
JPS59111997A (ja) * 1982-12-14 1984-06-28 Kyushu Denshi Kinzoku Kk エピタキシヤル成長装置
DE3485898D1 (de) * 1983-12-09 1992-10-01 Applied Materials Inc Induktiv beheitzter reaktor zur chemischen abscheidung aus der dampfphase.
DD221973A1 (de) * 1984-03-20 1985-05-08 Goerlitz Waggonbau Veb Fussboden fuer schienenfahrzeuge, insbesondere trieb- und reisezugwagen

Also Published As

Publication number Publication date
FR2567921A1 (fr) 1986-01-24
IT1209570B (it) 1989-08-30
JPH0644557B2 (ja) 1994-06-08
CH666140A5 (it) 1988-06-30
DE3525870A1 (de) 1986-01-23
JPS6136924A (ja) 1986-02-21
NL8502087A (nl) 1986-02-17
IT8421960A0 (it) 1984-07-19

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Legal Events

Date Code Title Description
ST Notification of lapse