DE3889446T2 - Vorrichtung zur Herstellung von dünnen Filmen. - Google Patents

Vorrichtung zur Herstellung von dünnen Filmen.

Info

Publication number
DE3889446T2
DE3889446T2 DE19883889446 DE3889446T DE3889446T2 DE 3889446 T2 DE3889446 T2 DE 3889446T2 DE 19883889446 DE19883889446 DE 19883889446 DE 3889446 T DE3889446 T DE 3889446T DE 3889446 T2 DE3889446 T2 DE 3889446T2
Authority
DE
Germany
Prior art keywords
production
thin films
films
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE19883889446
Other languages
English (en)
Other versions
DE3889446D1 (de
Inventor
Masanori Patent Licence Ohmura
Hiroshi Patent Licence Sakama
Kenji Patent Licence Qua Araki
Hiroshi Patent Licence Q Kamio
Yoshinobu Patent Licence Shima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JFE Engineering Corp
Original Assignee
Nippon Kokan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Kokan Ltd filed Critical Nippon Kokan Ltd
Application granted granted Critical
Publication of DE3889446D1 publication Critical patent/DE3889446D1/de
Publication of DE3889446T2 publication Critical patent/DE3889446T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
DE19883889446 1988-02-29 1988-02-29 Vorrichtung zur Herstellung von dünnen Filmen. Expired - Fee Related DE3889446T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP88103006A EP0330708B1 (de) 1988-02-29 1988-02-29 Vorrichtung zur Herstellung von dünnen Filmen

Publications (2)

Publication Number Publication Date
DE3889446D1 DE3889446D1 (de) 1994-06-09
DE3889446T2 true DE3889446T2 (de) 1994-11-17

Family

ID=8198763

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19883889446 Expired - Fee Related DE3889446T2 (de) 1988-02-29 1988-02-29 Vorrichtung zur Herstellung von dünnen Filmen.

Country Status (2)

Country Link
EP (1) EP0330708B1 (de)
DE (1) DE3889446T2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6217662B1 (en) 1997-03-24 2001-04-17 Cree, Inc. Susceptor designs for silicon carbide thin films
DE102014104009A1 (de) * 2014-03-24 2015-09-24 Aixtron Se Auf seinen beiden voneinander wegweisenden Breitseiten je ein Substrat tragender Substratträger

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0147967B1 (de) * 1983-12-09 1992-08-26 Applied Materials, Inc. Induktiv beheitzter Reaktor zur chemischen Abscheidung aus der Dampfphase
FR2587731B1 (fr) * 1985-09-23 1988-01-08 Centre Nat Rech Scient Procede et dispositif de depot chimique de couches minces uniformes sur de nombreux substrats plans a partir d'une phase gazeuse
US4858558A (en) * 1988-01-25 1989-08-22 Nippon Kokan Kabushiki Kaisha Film forming apparatus

Also Published As

Publication number Publication date
EP0330708A1 (de) 1989-09-06
DE3889446D1 (de) 1994-06-09
EP0330708B1 (de) 1994-05-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee