JPS5649518A - Wafer treating desk - Google Patents
Wafer treating deskInfo
- Publication number
- JPS5649518A JPS5649518A JP12413679A JP12413679A JPS5649518A JP S5649518 A JPS5649518 A JP S5649518A JP 12413679 A JP12413679 A JP 12413679A JP 12413679 A JP12413679 A JP 12413679A JP S5649518 A JPS5649518 A JP S5649518A
- Authority
- JP
- Japan
- Prior art keywords
- desk
- treating
- desks
- parts
- disk type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Abstract
PURPOSE:To make the flow of reaction gas to be smooth when a semiconductor wafer treating desk providing with a revolving large disk type rotary desk having rotating small disk type wafer treating desks on the upper side is to be constituted in a reaction room by a method wherein guide parts having a sloping sectional area are provided on the surface side at the circumferential parts of the small disk type wafer treating desks. CONSTITUTION:A revolving large disk type rotary desk 2 is arranged in a bell jar 1 constituting a reaction room, heaters 4 are provided at the back and plural rotating wafer treating desks 3 putting wafers 5 on them are provided on the surface of the rotary desk 2 to constitute a semiconductor wafer treating desk. In this constitution, concave parts are formed on the rotary desk 2 at the parts to be arranged with the treating desks 3, the treating desks 3 are sank in this places and guide parts 7 having slope on the surface are provided at their outer circumference. By this way, a reaction gas can flow smoothly on the guide parts 7, and especially the thickness of formed film at the circumferential part of the wafer 5 and the quality of film become uniform.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12413679A JPS5649518A (en) | 1979-09-28 | 1979-09-28 | Wafer treating desk |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12413679A JPS5649518A (en) | 1979-09-28 | 1979-09-28 | Wafer treating desk |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5649518A true JPS5649518A (en) | 1981-05-06 |
Family
ID=14877804
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12413679A Pending JPS5649518A (en) | 1979-09-28 | 1979-09-28 | Wafer treating desk |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5649518A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0147967A2 (en) * | 1983-12-09 | 1985-07-10 | Applied Materials, Inc. | Induction heated reactor system for chemical vapor deposition |
JPS61281517A (en) * | 1985-06-06 | 1986-12-11 | Shin Etsu Handotai Co Ltd | Susceptor for epitaxial wafer |
US4839145A (en) * | 1986-08-27 | 1989-06-13 | Massachusetts Institute Of Technology | Chemical vapor deposition reactor |
US4961399A (en) * | 1988-03-22 | 1990-10-09 | U.S. Philips Corporation | Epitaxial growth reactor provided with a planetary support |
JP2009071210A (en) * | 2007-09-18 | 2009-04-02 | Covalent Materials Tokuyama Corp | Susceptor and epitaxial growth system |
-
1979
- 1979-09-28 JP JP12413679A patent/JPS5649518A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0147967A2 (en) * | 1983-12-09 | 1985-07-10 | Applied Materials, Inc. | Induction heated reactor system for chemical vapor deposition |
JPS61281517A (en) * | 1985-06-06 | 1986-12-11 | Shin Etsu Handotai Co Ltd | Susceptor for epitaxial wafer |
US4839145A (en) * | 1986-08-27 | 1989-06-13 | Massachusetts Institute Of Technology | Chemical vapor deposition reactor |
US4961399A (en) * | 1988-03-22 | 1990-10-09 | U.S. Philips Corporation | Epitaxial growth reactor provided with a planetary support |
JP2009071210A (en) * | 2007-09-18 | 2009-04-02 | Covalent Materials Tokuyama Corp | Susceptor and epitaxial growth system |
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