JPS55160422A - Method and device for thin film growth - Google Patents

Method and device for thin film growth

Info

Publication number
JPS55160422A
JPS55160422A JP6842779A JP6842779A JPS55160422A JP S55160422 A JPS55160422 A JP S55160422A JP 6842779 A JP6842779 A JP 6842779A JP 6842779 A JP6842779 A JP 6842779A JP S55160422 A JPS55160422 A JP S55160422A
Authority
JP
Japan
Prior art keywords
thin film
heater
around
pots
melting pot
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6842779A
Other languages
Japanese (ja)
Other versions
JPS6232610B2 (en
Inventor
Tsuneo Tanaka
Seiichi Nagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP6842779A priority Critical patent/JPS55160422A/en
Publication of JPS55160422A publication Critical patent/JPS55160422A/en
Publication of JPS6232610B2 publication Critical patent/JPS6232610B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To obtain a thin film having a uniform composition when the thin film is made to be grown on the substrate disposed in a vacuum by a method wherein plural kinds of stuff substances containing thin film constituting elements are made to evaporate in independent melting pots and the vapors are mixed to make to collide with a surface of substrate. CONSTITUTION:A substrate on which a thin film is made to be grown, and a molecular beam source discharging plural kinds of elements constituting the thin film, are disposed in a super high vacuum room. The construction of the molecular beam source is made to be as follows. A melting pot 32 containing In is put at the deep position of center part being wound with a heater 42 around the outer circumference, a circular melting pot 31 containing Ga and having a heater 41 around the outer circumference is prepared at the upper circumference of the pot 32 and respective molecular beam discharging openings 52, 51 of the pots 32, 31 are made to form a concentric circle. Moreover, a melting pot 33 containing As and having a heater 43, and a melting pot 34 containing P and being wound around with a heater 44, are prepared at the outside of these pots, and their openings 53, 54 are arranged being extended to form a concentric circle around thef opening 51, and these gases are mixed.
JP6842779A 1979-05-31 1979-05-31 Method and device for thin film growth Granted JPS55160422A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6842779A JPS55160422A (en) 1979-05-31 1979-05-31 Method and device for thin film growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6842779A JPS55160422A (en) 1979-05-31 1979-05-31 Method and device for thin film growth

Publications (2)

Publication Number Publication Date
JPS55160422A true JPS55160422A (en) 1980-12-13
JPS6232610B2 JPS6232610B2 (en) 1987-07-15

Family

ID=13373374

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6842779A Granted JPS55160422A (en) 1979-05-31 1979-05-31 Method and device for thin film growth

Country Status (1)

Country Link
JP (1) JPS55160422A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007002291A (en) * 2005-06-23 2007-01-11 Utec:Kk Evaporation source, vapor deposition system, and vapor deposition method
JP2008516389A (en) * 2004-10-11 2008-05-15 ドゥサン ディーエヌディー カンパニー リミテッド Multi-nozzle crucible device for organic light emitting diode deposition process
JP4599727B2 (en) * 2001-02-21 2010-12-15 株式会社デンソー Vapor deposition equipment
JP2012126958A (en) * 2010-12-15 2012-07-05 Ulvac Japan Ltd Vapor deposition apparatus and vapor deposition method
JP2013185208A (en) * 2012-03-08 2013-09-19 Hitachi Zosen Corp Apparatus for mixing vapor deposition material gas
JP2016017204A (en) * 2014-07-08 2016-02-01 長州産業株式会社 Ring type vapor deposition source

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53110973A (en) * 1977-03-10 1978-09-28 Futaba Denshi Kogyo Kk Method and apparatus for manufacturing compounds

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53110973A (en) * 1977-03-10 1978-09-28 Futaba Denshi Kogyo Kk Method and apparatus for manufacturing compounds

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4599727B2 (en) * 2001-02-21 2010-12-15 株式会社デンソー Vapor deposition equipment
JP2008516389A (en) * 2004-10-11 2008-05-15 ドゥサン ディーエヌディー カンパニー リミテッド Multi-nozzle crucible device for organic light emitting diode deposition process
JP2007002291A (en) * 2005-06-23 2007-01-11 Utec:Kk Evaporation source, vapor deposition system, and vapor deposition method
JP2012126958A (en) * 2010-12-15 2012-07-05 Ulvac Japan Ltd Vapor deposition apparatus and vapor deposition method
JP2013185208A (en) * 2012-03-08 2013-09-19 Hitachi Zosen Corp Apparatus for mixing vapor deposition material gas
JP2016017204A (en) * 2014-07-08 2016-02-01 長州産業株式会社 Ring type vapor deposition source

Also Published As

Publication number Publication date
JPS6232610B2 (en) 1987-07-15

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