FR2655772B1 - Dispositif antipollution pour bati vertical de depot en phase gazeuse. - Google Patents
Dispositif antipollution pour bati vertical de depot en phase gazeuse.Info
- Publication number
- FR2655772B1 FR2655772B1 FR8916268A FR8916268A FR2655772B1 FR 2655772 B1 FR2655772 B1 FR 2655772B1 FR 8916268 A FR8916268 A FR 8916268A FR 8916268 A FR8916268 A FR 8916268A FR 2655772 B1 FR2655772 B1 FR 2655772B1
- Authority
- FR
- France
- Prior art keywords
- vertical gas
- gas deposit
- antipollution device
- deposit building
- building
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45582—Expansion of gas before it reaches the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8916268A FR2655772B1 (fr) | 1989-12-08 | 1989-12-08 | Dispositif antipollution pour bati vertical de depot en phase gazeuse. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8916268A FR2655772B1 (fr) | 1989-12-08 | 1989-12-08 | Dispositif antipollution pour bati vertical de depot en phase gazeuse. |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2655772A1 FR2655772A1 (fr) | 1991-06-14 |
FR2655772B1 true FR2655772B1 (fr) | 1992-01-24 |
Family
ID=9388303
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8916268A Expired - Fee Related FR2655772B1 (fr) | 1989-12-08 | 1989-12-08 | Dispositif antipollution pour bati vertical de depot en phase gazeuse. |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2655772B1 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10242057A (ja) * | 1997-02-25 | 1998-09-11 | Shin Etsu Handotai Co Ltd | 縦型cvd装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59107998A (ja) * | 1982-12-07 | 1984-06-22 | Fujitsu Ltd | 結晶成長装置 |
DE3485898D1 (de) * | 1983-12-09 | 1992-10-01 | Applied Materials Inc | Induktiv beheitzter reaktor zur chemischen abscheidung aus der dampfphase. |
JPS6369975A (ja) * | 1986-09-10 | 1988-03-30 | Nec Corp | 気相成長装置 |
JPS6369794A (ja) * | 1986-09-12 | 1988-03-29 | Nec Corp | 気相エピタキシヤル成長装置 |
-
1989
- 1989-12-08 FR FR8916268A patent/FR2655772B1/fr not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
FR2655772A1 (fr) | 1991-06-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |