ITMI20050645A1 - Suscettori per reattori epitassiali e utensile per maneggiarlo - Google Patents

Suscettori per reattori epitassiali e utensile per maneggiarlo

Info

Publication number
ITMI20050645A1
ITMI20050645A1 IT000645A ITMI20050645A ITMI20050645A1 IT MI20050645 A1 ITMI20050645 A1 IT MI20050645A1 IT 000645 A IT000645 A IT 000645A IT MI20050645 A ITMI20050645 A IT MI20050645A IT MI20050645 A1 ITMI20050645 A1 IT MI20050645A1
Authority
IT
Italy
Prior art keywords
suscectors
tool handling
epitaxial reactors
epitaxial
reactors
Prior art date
Application number
IT000645A
Other languages
English (en)
Inventor
Danilo Crippa
Ingemar Karlsson
Franco Preti
Gianluca Valente
Original Assignee
Lpe Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lpe Spa filed Critical Lpe Spa
Priority to IT000645A priority Critical patent/ITMI20050645A1/it
Priority to JP2008505864A priority patent/JP2008536014A/ja
Priority to US11/911,412 priority patent/US20080190357A1/en
Priority to PCT/EP2006/061318 priority patent/WO2006108783A1/en
Priority to EP06725554A priority patent/EP1877600A1/en
Priority to CNA2006800015956A priority patent/CN101103453A/zh
Priority to RU2007142030/28A priority patent/RU2007142030A/ru
Priority to KR1020077013607A priority patent/KR20080004448A/ko
Publication of ITMI20050645A1 publication Critical patent/ITMI20050645A1/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/005—Transport systems
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
IT000645A 2005-04-14 2005-04-14 Suscettori per reattori epitassiali e utensile per maneggiarlo ITMI20050645A1 (it)

Priority Applications (8)

Application Number Priority Date Filing Date Title
IT000645A ITMI20050645A1 (it) 2005-04-14 2005-04-14 Suscettori per reattori epitassiali e utensile per maneggiarlo
JP2008505864A JP2008536014A (ja) 2005-04-14 2006-04-05 エピタキシャル反応装置用サセプタ及びそれを取り扱うための工具
US11/911,412 US20080190357A1 (en) 2005-04-14 2006-04-05 Susceptor for Expitaxial Reactors and Tool for the Handling Thereof
PCT/EP2006/061318 WO2006108783A1 (en) 2005-04-14 2006-04-05 Susceptor for epitaxial reactors and tool for the handling thereof
EP06725554A EP1877600A1 (en) 2005-04-14 2006-04-05 Susceptor for epitaxial reactors and tool for the handling thereof
CNA2006800015956A CN101103453A (zh) 2005-04-14 2006-04-05 用于外延反应器的基座以及操作基座的工具
RU2007142030/28A RU2007142030A (ru) 2005-04-14 2006-04-05 Держатель для эпитаксиальных реакторов и инструмент для обращения с ним
KR1020077013607A KR20080004448A (ko) 2005-04-14 2006-04-05 에피택시얼 반응기용 서셉터 및 그것의 핸들링을 위한 툴

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT000645A ITMI20050645A1 (it) 2005-04-14 2005-04-14 Suscettori per reattori epitassiali e utensile per maneggiarlo

Publications (1)

Publication Number Publication Date
ITMI20050645A1 true ITMI20050645A1 (it) 2006-10-15

Family

ID=36691728

Family Applications (1)

Application Number Title Priority Date Filing Date
IT000645A ITMI20050645A1 (it) 2005-04-14 2005-04-14 Suscettori per reattori epitassiali e utensile per maneggiarlo

Country Status (8)

Country Link
US (1) US20080190357A1 (it)
EP (1) EP1877600A1 (it)
JP (1) JP2008536014A (it)
KR (1) KR20080004448A (it)
CN (1) CN101103453A (it)
IT (1) ITMI20050645A1 (it)
RU (1) RU2007142030A (it)
WO (1) WO2006108783A1 (it)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101988056B1 (ko) * 2013-01-04 2019-06-11 에스케이실트론 주식회사 에피택셜 반응기 및 에피택셜 반응기의 서셉터 지지수단
ITCO20130073A1 (it) * 2013-12-19 2015-06-20 Lpe Spa Camera di reazione di un reattore per crescite epitassiali adatta per l'uso con un dispositivo di carico/scarico e reattore
CN106471614B (zh) 2014-07-03 2020-08-25 Lpe公司 用于操纵衬底的工具、操纵方法及外延反应器
JP6361495B2 (ja) * 2014-12-22 2018-07-25 東京エレクトロン株式会社 熱処理装置
JP6539929B2 (ja) 2015-12-21 2019-07-10 昭和電工株式会社 ウェハ支持機構、化学気相成長装置およびエピタキシャルウェハの製造方法
ITUB20160556A1 (it) * 2016-02-08 2017-08-08 L P E S P A Suscettore con perno riscaldato e reattore per deposizione epitassiale
US10407769B2 (en) 2016-03-18 2019-09-10 Goodrich Corporation Method and apparatus for decreasing the radial temperature gradient in CVI/CVD furnaces
DE102016115614A1 (de) * 2016-08-23 2018-03-01 Aixtron Se Suszeptor für einen CVD-Reaktor
CN114450439A (zh) * 2019-10-03 2022-05-06 洛佩诗公司 具有存储室的处理装置和外延反应器
CN114250451B (zh) * 2021-06-01 2023-03-07 浙江求是半导体设备有限公司 外延生长装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3485898D1 (de) * 1983-12-09 1992-10-01 Applied Materials Inc Induktiv beheitzter reaktor zur chemischen abscheidung aus der dampfphase.
JP4521545B2 (ja) * 2001-08-23 2010-08-11 信越半導体株式会社 気相成長装置およびウェーハの着脱方法

Also Published As

Publication number Publication date
JP2008536014A (ja) 2008-09-04
US20080190357A1 (en) 2008-08-14
KR20080004448A (ko) 2008-01-09
RU2007142030A (ru) 2009-05-20
EP1877600A1 (en) 2008-01-16
WO2006108783A1 (en) 2006-10-19
CN101103453A (zh) 2008-01-09

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