DE69623962D1 - Verfahren und vorrichtung zum epitaktischen wachstum mittels cvd - Google Patents

Verfahren und vorrichtung zum epitaktischen wachstum mittels cvd

Info

Publication number
DE69623962D1
DE69623962D1 DE69623962T DE69623962T DE69623962D1 DE 69623962 D1 DE69623962 D1 DE 69623962D1 DE 69623962 T DE69623962 T DE 69623962T DE 69623962 T DE69623962 T DE 69623962T DE 69623962 D1 DE69623962 D1 DE 69623962D1
Authority
DE
Germany
Prior art keywords
epitactical
cvd
growth
epitactical growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69623962T
Other languages
English (en)
Other versions
DE69623962T3 (de
DE69623962T2 (de
Inventor
Olle Kordina
Christer Hallin
Erik Janzen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Silicon Carbide AB
Original Assignee
Okmetic Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=20398726&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69623962(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Okmetic Oy filed Critical Okmetic Oy
Publication of DE69623962D1 publication Critical patent/DE69623962D1/de
Application granted granted Critical
Publication of DE69623962T2 publication Critical patent/DE69623962T2/de
Publication of DE69623962T3 publication Critical patent/DE69623962T3/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
DE69623962T 1995-06-26 1996-06-24 Verfahren und vorrichtung zum epitaktischen wachstum mittels cvd Expired - Lifetime DE69623962T3 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SE9502288 1995-06-26
SE9502288A SE9502288D0 (sv) 1995-06-26 1995-06-26 A device and a method for epitaxially growing objects by CVD
PCT/SE1996/000822 WO1997001658A1 (en) 1995-06-26 1996-06-24 A device and a method for epitaxially growing objects by cvd

Publications (3)

Publication Number Publication Date
DE69623962D1 true DE69623962D1 (de) 2002-10-31
DE69623962T2 DE69623962T2 (de) 2003-01-23
DE69623962T3 DE69623962T3 (de) 2010-04-01

Family

ID=20398726

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69623962T Expired - Lifetime DE69623962T3 (de) 1995-06-26 1996-06-24 Verfahren und vorrichtung zum epitaktischen wachstum mittels cvd

Country Status (6)

Country Link
US (1) US5704985A (de)
EP (1) EP0835336B2 (de)
JP (1) JP4121555B2 (de)
DE (1) DE69623962T3 (de)
SE (1) SE9502288D0 (de)
WO (1) WO1997001658A1 (de)

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE9503426D0 (sv) * 1995-10-04 1995-10-04 Abb Research Ltd A device for heat treatment of objects and a method for producing a susceptor
SE9503428D0 (sv) † 1995-10-04 1995-10-04 Abb Research Ltd A method for epitaxially growing objects and a device for such a growth
US5989340A (en) * 1995-11-14 1999-11-23 Siemens Aktiengesellschaft Process and device for sublimation growing of silicon carbide monocrystals
DE19603323A1 (de) * 1996-01-30 1997-08-07 Siemens Ag Verfahren und Vorrichtung zum Herstellen von SiC durch CVD mit verbesserter Gasausnutzung
SE9603586D0 (sv) * 1996-10-01 1996-10-01 Abb Research Ltd A device for epitaxially growing objects and method for such a growth
SE9603587D0 (sv) * 1996-10-01 1996-10-01 Abb Research Ltd A device for epitaxially growing objects and method for such a growth
US6039812A (en) * 1996-10-21 2000-03-21 Abb Research Ltd. Device for epitaxially growing objects and method for such a growth
JP3336897B2 (ja) * 1997-02-07 2002-10-21 三菱住友シリコン株式会社 気相成長装置用サセプター
US6063186A (en) * 1997-12-17 2000-05-16 Cree, Inc. Growth of very uniform silicon carbide epitaxial layers
SE9801190D0 (sv) * 1998-04-06 1998-04-06 Abb Research Ltd A method and a device for epitaxial growth of objects by Chemical Vapour Deposition
RU2162117C2 (ru) * 1999-01-21 2001-01-20 Макаров Юрий Николаевич Способ эпитаксиального выращивания карбида кремния и реактор для его осуществления
US6284986B1 (en) 1999-03-15 2001-09-04 Seh America, Inc. Method of determining the thickness of a layer on a silicon substrate
US6286685B1 (en) 1999-03-15 2001-09-11 Seh America, Inc. System and method for wafer thickness sorting
US6451112B1 (en) 1999-10-15 2002-09-17 Denso Corporation Method and apparatus for fabricating high quality single crystal
JP3707726B2 (ja) * 2000-05-31 2005-10-19 Ｈｏｙａ株式会社 炭化珪素の製造方法、複合材料の製造方法
JP3864696B2 (ja) * 2000-11-10 2007-01-10 株式会社デンソー 炭化珪素単結晶の製造方法及び製造装置
JP3959952B2 (ja) * 2000-11-10 2007-08-15 株式会社デンソー 炭化珪素単結晶の製造方法及び製造装置
US6569250B2 (en) 2001-01-08 2003-05-27 Cree, Inc. Gas-driven rotation apparatus and method for forming silicon carbide layers
US6896738B2 (en) * 2001-10-30 2005-05-24 Cree, Inc. Induction heating devices and methods for controllably heating an article
JP2003234296A (ja) * 2002-02-07 2003-08-22 Denso Corp 炭化珪素単結晶の製造装置
US6797069B2 (en) * 2002-04-08 2004-09-28 Cree, Inc. Gas driven planetary rotation apparatus and methods for forming silicon carbide layers
JP3922074B2 (ja) * 2002-04-09 2007-05-30 株式会社デンソー 炭化珪素単結晶の製造方法および製造装置
FR2839730B1 (fr) * 2002-05-15 2004-08-27 Centre Nat Rech Scient Formation de carbure de silicium monocristallin
SE525574C2 (sv) 2002-08-30 2005-03-15 Okmetic Oyj Lågdopat kiselkarbidsubstrat och användning därav i högspänningskomponenter
DE10243022A1 (de) * 2002-09-17 2004-03-25 Degussa Ag Abscheidung eines Feststoffs durch thermische Zersetzung einer gasförmigen Substanz in einem Becherreaktor
US7217323B2 (en) 2003-04-04 2007-05-15 Denso Corporation Equipment and method for manufacturing silicon carbide single crystal
US7118781B1 (en) * 2003-04-16 2006-10-10 Cree, Inc. Methods for controlling formation of deposits in a deposition system and deposition methods including the same
DE602004001802T3 (de) * 2003-04-24 2012-01-26 Norstel Ab Vorrichtung und Verfahren zur Herstellung von Einkristallen durch Dampfphasenabscheidung
US7147713B2 (en) * 2003-04-30 2006-12-12 Cree, Inc. Phase controlled sublimation
US7247513B2 (en) * 2003-05-08 2007-07-24 Caracal, Inc. Dissociation of silicon clusters in a gas phase during chemical vapor deposition homo-epitaxial growth of silicon carbide
ITMI20031196A1 (it) * 2003-06-13 2004-12-14 Lpe Spa Sistema per crescere cristalli di carburo di silicio
US7052546B1 (en) 2003-08-28 2006-05-30 Cape Simulations, Inc. High-purity crystal growth
US6974720B2 (en) * 2003-10-16 2005-12-13 Cree, Inc. Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby
US7230274B2 (en) 2004-03-01 2007-06-12 Cree, Inc Reduction of carrot defects in silicon carbide epitaxy
US20060006394A1 (en) * 2004-05-28 2006-01-12 Caracal, Inc. Silicon carbide Schottky diodes and fabrication method
US7396743B2 (en) * 2004-06-10 2008-07-08 Singh Kaushal K Low temperature epitaxial growth of silicon-containing films using UV radiation
CN1312079C (zh) * 2004-07-07 2007-04-25 中国科学院半导体研究所 一种竖直式高温大功率碳化硅外延材料制造装置
JP4923452B2 (ja) * 2004-08-27 2012-04-25 株式会社デンソー ＳｉＣ単結晶の製造方法
US7811943B2 (en) 2004-12-22 2010-10-12 Cree, Inc. Process for producing silicon carbide crystals having increased minority carrier lifetimes
JP4604728B2 (ja) * 2005-01-14 2011-01-05 株式会社デンソー 炭化珪素単結晶の製造方法
CN100418193C (zh) * 2005-06-14 2008-09-10 中国科学院半导体研究所 制造厚膜氮化物材料的氢化物气相外延装置
US8052794B2 (en) * 2005-09-12 2011-11-08 The United States Of America As Represented By The Secretary Of The Navy Directed reagents to improve material uniformity
US9388509B2 (en) 2005-12-07 2016-07-12 Ii-Vi Incorporated Method for synthesizing ultrahigh-purity silicon carbide
US20070169687A1 (en) * 2006-01-26 2007-07-26 Caracal, Inc. Silicon carbide formation by alternating pulses
US8568531B2 (en) * 2006-07-28 2013-10-29 Pronomic Industry Ab Seed holder for crystal growth reactors
US9064706B2 (en) 2006-11-17 2015-06-23 Sumitomo Electric Industries, Ltd. Composite of III-nitride crystal on laterally stacked substrates
JP5332168B2 (ja) * 2006-11-17 2013-11-06 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の製造方法
US7449065B1 (en) 2006-12-02 2008-11-11 Ohio Aerospace Institute Method for the growth of large low-defect single crystals
US8409351B2 (en) * 2007-08-08 2013-04-02 Sic Systems, Inc. Production of bulk silicon carbide with hot-filament chemical vapor deposition
JP4591523B2 (ja) * 2008-03-05 2010-12-01 株式会社デンソー 炭化珪素単結晶の製造装置
JP5332916B2 (ja) * 2009-06-03 2013-11-06 株式会社デンソー 炭化珪素単結晶の製造装置
KR101678661B1 (ko) * 2009-11-18 2016-11-22 알이씨 실리콘 인코포레이티드 유동층 반응기
JP5407899B2 (ja) * 2010-01-25 2014-02-05 株式会社デンソー 炭化珪素単結晶の製造装置および製造方法
JP5481224B2 (ja) * 2010-02-19 2014-04-23 株式会社ニューフレアテクノロジー 成膜装置および成膜方法
JP5212455B2 (ja) 2010-12-16 2013-06-19 株式会社デンソー 炭化珪素単結晶の製造装置
US9322110B2 (en) 2013-02-21 2016-04-26 Ii-Vi Incorporated Vanadium doped SiC single crystals and method thereof
JP6187372B2 (ja) * 2014-04-11 2017-08-30 株式会社デンソー 炭化珪素単結晶製造装置
US9580837B2 (en) 2014-09-03 2017-02-28 Ii-Vi Incorporated Method for silicon carbide crystal growth by reacting elemental silicon vapor with a porous carbon solid source material
JP6083766B2 (ja) * 2015-07-03 2017-02-22 株式会社エピクエスト Ｎｈ３雰囲気高温加熱装置
DE102018129492B4 (de) * 2018-11-22 2022-04-28 Ebner Industrieofenbau Gmbh Vorrichtung und Verfahren zum Züchten von Kristallen
CN113026099A (zh) * 2021-03-05 2021-06-25 广州爱思威科技股份有限公司 碳化硅单晶生长控制装置及控制方法
KR102525767B1 (ko) 2021-11-11 2023-04-27 오씨아이 주식회사 고순도 SiC 결정체의 제조방법

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1039748A (en) † 1964-07-25 1966-08-24 Ibm Improvements relating to methods of growing silicon carbide crystals epitaxially
US3372671A (en) * 1965-05-26 1968-03-12 Westinghouse Electric Corp Apparatus for producing vapor growth of silicon crystals
NL143436B (nl) * 1966-12-14 1974-10-15 Philips Nv Werkwijze voor het vervaardigen van draadvormige siliciumcarbide kristallen en voorwerpen geheel of voor een deel bestaande uit deze kristallen.
US3713900A (en) * 1969-04-02 1973-01-30 C Suzuki Method for making uniform single crystal semiconductors epitaxially
US4147571A (en) * 1977-07-11 1979-04-03 Hewlett-Packard Company Method for vapor epitaxial deposition of III/V materials utilizing organometallic compounds and a halogen or halide in a hot wall system
US4263872A (en) * 1980-01-31 1981-04-28 Rca Corporation Radiation heated reactor for chemical vapor deposition on substrates
US4421592A (en) * 1981-05-22 1983-12-20 United Technologies Corporation Plasma enhanced deposition of semiconductors
US4699084A (en) * 1982-12-23 1987-10-13 The United States Of America As Represented By The Secretary Of The Army Apparatus for producing high quality epitaxially grown semiconductors
JPS60145992A (ja) † 1983-12-29 1985-08-01 Sharp Corp 炭化珪素単結晶基板の製造方法
JPH0788274B2 (ja) * 1985-09-18 1995-09-27 三洋電機株式会社 ＳｉＣ単結晶の成長方法
US4866005A (en) * 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
US4914276A (en) * 1988-05-12 1990-04-03 Princeton Scientific Enterprises, Inc. Efficient high temperature radiant furnace
US5094711A (en) * 1988-09-12 1992-03-10 Gte Valenite Corporation Process for producing single crystal titanium carbide whiskers
JPH02296799A (ja) * 1989-05-10 1990-12-07 Nec Corp 炭化珪素の成長方法
JPH05125543A (ja) * 1991-10-31 1993-05-21 Shin Etsu Chem Co Ltd 炭化珪素膜製造装置
JPH05208900A (ja) * 1992-01-28 1993-08-20 Nisshin Steel Co Ltd 炭化ケイ素単結晶の成長装置
US5433167A (en) * 1992-02-04 1995-07-18 Sharp Kabushiki Kaisha Method of producing silicon-carbide single crystals by sublimation recrystallization process using a seed crystal
TW337513B (en) † 1992-11-23 1998-08-01 Cvd Inc Chemical vapor deposition-produced silicon carbide having improved properties and preparation process thereof
US5441011A (en) * 1993-03-16 1995-08-15 Nippon Steel Corporation Sublimation growth of single crystal SiC

Also Published As

Publication number Publication date
WO1997001658A1 (en) 1997-01-16
US5704985A (en) 1998-01-06
JPH11508531A (ja) 1999-07-27
EP0835336B1 (de) 2002-09-25
EP0835336A1 (de) 1998-04-15
JP4121555B2 (ja) 2008-07-23
SE9502288D0 (sv) 1995-06-26
DE69623962T3 (de) 2010-04-01
EP0835336B2 (de) 2009-09-16
DE69623962T2 (de) 2003-01-23

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Legal Events

Date Code Title Description
8363 Opposition against the patent
8327 Change in the person/name/address of the patent owner

Owner name: NORSTEL AB, LINKOEPING, SE

8366 Restricted maintained after opposition proceedings
8327 Change in the person/name/address of the patent owner

Owner name: NORSTEL AB, NORRKOEPING, SE